COMPOUND SEMICONDUCTORS SURFACE CHARACTERIZATION BY HIGH RESOLUTION RUTHERFORD BACKSCATTERINGHAGE ALI M; SIFFERT P.1979; NUCL. INSTRUM. METHODS; NLD; DA. 1979; VOL. 166; NO 3; PP. 411-418; BIBL. 13 REF.Article

METHODS TO SUPPRESS POLARIZATION IN CHOLINE COMPENSATED CADMIUM TELLURIDE DETECTORS.SIFFERT P; HAGE ALI M; STUCK R et al.1977; REV. PHYS. APPL.; FR.; DA. 1977; VOL. 12; NO 2; PP. 335-338; ABS. FR.; BIBL. 16 REF.; (COLLOQ. INT. TELLURURE CADMIUM. PROPR. PHYS. APPL. 2; STRASBOURG; 1976)Conference Paper

STUDIES OF CDTE SURFACES WITH SECONDARY ION MASS SPECTROMETRY, RUTHERFORD BACKSCATTERING AND ELLIPSOMETRYHAGE ALI M; STUCK R; SAXENA AN et al.1979; APPL. PHYS.; DEU; DA. 1979; VOL. 19; NO 1; PP. 25-33; BIBL. 19 REF.Article

Energy loss straggling of protons and He ions in gold from 0.1 to 1.0 Me/u = Traînage des pertes d'énergie des protons et des ions He dans l'or de 0,1 à 1,0 MeV/uSTOQUERT, J. P; HAGE-ALI, M; SIFFERT, P et al.Radiation effects. 1986, Vol 97, Num 1-2, pp 37-44, issn 0033-7579Article

STOPPING POWER AND STRAGGLING OF ¹H AND ⁴HE IN ZNTE AND CDTE.PAPE A; HAGE ALI M; REFAEI SM et al.1977; RAD. EFFECTS; G.B.; DA. 1977; VOL. 33; NO 4; PP. 193-197; BIBL. 16 REF.Article

Passivation of high-resistivity cadmium telluride by hydrogen implantationBIGLARI, B; SAMIMI, M; HAGE-ALI, M et al.Applied physics. A, Solids and surfaces. 1987, Vol 43, Num 1, pp 47-52, issn 0721-7250Article

Effective and equilibrium evaporation coefficients of some impurities in molten telluriumZAIOUR, A; HAGE-ALI, M; KOEBEL, J. M et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1989, Vol 3, Num 3, pp 331-334, issn 0921-5107Article

UNANALYZED ION IMPLANTATION PROCEDURE WITH INCOHERENT LIGHT SCANNING ANNEALING FOR SILICON SOLAR CELLS MANUFACTURINGBENTINI G; CORRERA L; GALLONI R et al.1982; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 16/1982-09-27/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1982; PP. 759-763; BIBL. 11 REF.Conference Paper

Rutherford backscattering analysis of phosphorus gettering of gold and copperHARTITI, B; HAGE-ALI, M; MULLER, J. C et al.Applied physics letters. 1993, Vol 62, Num 26, pp 3476-3478, issn 0003-6951Article

Accurate evaluations of thermally stimulated current curves and defect parameters for CdTe crystalsELKOMOSS, S. G; SAMIMI, M; HAGE-ALI, M et al.Journal of applied physics. 1985, Vol 57, Num 12, pp 5313-5319, issn 0021-8979Article

Etude par spectrométrie de rétrodiffusion de Rutherford (RBS) et par spectroscopie de photoélectrons (XPS) des interfaces calcium/titane = Calcium deposition by evaporation on titanium studied by RBS and XPS combined with argon sputteringDEMRI, B; FERENCZI, A. M; HAGE ALI, M et al.Revue de stomatologie et de chirurgie maxillo-faciale. 1997, Vol 98, pp 61-65, issn 0035-1768, SUP1Conference Paper

Microscopic defect level characterization of semi-insulating compound semicoductors by TSC and PICTS : application to the effect of hydrogen in CdTeHAGE-ALI, M; YAACOUB, B; MERGUI, S et al.Applied surface science. 1991, Vol 50, Num 1-4, pp 377-382, issn 0169-4332, 6 p.Conference Paper

Effects of copper in high resistivity cadmium tellurideBIGLARI, B; SAMIMI, M; HAGE-ALI, M et al.Journal of crystal growth. 1988, Vol 89, Num 4, pp 428-434, issn 0022-0248Article

Evolution of resistivity along Cl-compensated THM grown cadmium telluride crystalsBIGLARI, B; SAMINI, M; KOEBEL, J. M et al.Physica status solidi. A. Applied research. 1987, Vol 100, Num 2, pp 589-596, issn 0031-8965Article

Time-resolved reflectivity and melting depth measurements using pulsed ruby laser on siliconTOULEMONDE, M; UNAMUNO, S; HEDDACHE, R et al.Applied physics. A, Solids and surfaces. 1985, Vol 36, Num 1, pp 31-36, issn 0721-7250Article

Study of the photodecay in CdTe X-ray detectorsWURM, P; HAGE-ALI, M; KOEBEL, J. M et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 28, Num 1-3, pp 47-50, issn 0921-5107Conference Paper

Crystallization of ultrathin W-Si multilayer structures by high-energy heavy ion irradiationsMARFAING, J; MARINE, W; VIDAL, B et al.Applied physics letters. 1990, Vol 57, Num 17, pp 1739-1741, issn 0003-6951Article

Dose effects during solid phase epitaxial regrowth of boron-implanted, germanium-amorphized silicon induced by rapid thermal annealingADEKOYA, W. O; HAGE-ALI, M; MULLER, J. C et al.Applied physics letters. 1988, Vol 53, Num 6, pp 511-513, issn 0003-6951Article

Direct evidence of recrystallization rate enhancement during rapid thermal annealing of phosphorus amorphized silicon layersADEKOYA, W. O; HAGE ALI, M; MULLER, J. C et al.Applied physics letters. 1987, Vol 50, Num 24, pp 1736-1738, issn 0003-6951Article

Passivation of bulk trapping levels in cadmium telluride by proton implantationBIGLARI, B; SAMIMI, M; HAGE-ALI, M et al.Journal of applied physics. 1989, Vol 65, Num 3, pp 1112-1117, issn 0021-8979Article

About the origin of the 0.15 to 0.20 eV defect level in cadmium tellurideSAMIMI, M; BIGLARI, B; HAGE-ALI, M et al.Physica status solidi. A. Applied research. 1987, Vol 100, Num 1, pp 251-258, issn 0031-8965Article

Experimental investigations and numerical integration of the thermally stimulated current rate equations for defect parameters in CdTe crystalsELKOMOSS, S. G; SAMIMI, M; UNAMUNO, S et al.Journal of applied physics. 1986, Vol 61, Num 6, pp 2230-2233, issn 0021-8979Article

Compensation origins in II-VI CZT materialsZUMBIEHL, A; MERGUI, S; AYOUB, M et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 71, Num 1-3, pp 297-300, issn 0921-5107Conference Paper

Electrically active defects in detector-grade CdTe:Cl and CdZnTe materials grown by THM and HPBMCHIBANI, L; HAGE-ALI, M; SIFFERT, P et al.Journal of crystal growth. 1996, Vol 161, Num 1-4, pp 153-158, issn 0022-0248Conference Paper

Characterization and identification of the deep levels in V doped CdTe and their relationship with the photorefractive propertiesBREMOND, G; ZERRAI, A; MOISAN, J. Y et al.Optical materials (Amsterdam). 1995, Vol 4, Num 2-3, pp 246-251, issn 0925-3467Conference Paper