Influence of wettability on anodic bias induced electroluminescence in porous siliconHALIMAOUI, A.Applied physics letters. 1993, Vol 63, Num 9, pp 1264-1266, issn 0003-6951Article

Determination of the specific surface area of porous silicon from its etch rate in HF solutionsHALIMAOUI, A.Surface science. 1994, Vol 306, Num 1-2, pp L550-L554, issn 0039-6028Article

A microstructural study of porous siliconBERBEZIER, I; HALIMAOUI, A.Journal of applied physics. 1993, Vol 74, Num 9, pp 5421-5425, issn 0021-8979Article

SAXS study of the influence of the porous silicon morphology on the photoluminescence efficiencyGOUDEAU, P; NAUDON, A; HALIMAOUI, A et al.Journal of luminescence. 1993, Vol 57, Num 1-6, pp 141-145, issn 0022-2313Article

Optical characterisation of porous silicon layers by spectrometric ellipsometry in the 1.5-5 eV rangeFERRIEU, F; HALIMAOUI, A; BENSAHEL, D et al.Solid state communications. 1992, Vol 84, Num 3, pp 293-296, issn 0038-1098Article

X-ray study of UHV-CVD filling of porous silicon by GeBUTTARD, D; DOLINO, G; CAMPIDELLI, Y et al.Journal of crystal growth. 1998, Vol 183, Num 3, pp 294-304, issn 0022-0248Article

Porous silicon: the material and its applications in silicon-on-insulator technologiesBOMCHIL, G; HALIMAOUI, A; HERINO, R et al.Applied surface science. 1989, Vol 41-42, Num 1-4, pp 604-613, issn 0169-4332Conference Paper

Nanocrystallites in luminescent porous silicon characterized by Raman scatteringGREGORA, I; CHAMPAGNON, B; HALIMAOUI, A et al.Journal of luminescence. 1993, Vol 57, Num 1-6, pp 73-76, issn 0022-2313Article

Influence of the experimental procedure in the specific surface measurement by chemical dissolution of n⁺ nanoporous siliconDESCAMPS, Y; DUFOUR-GERGAM, E; HALIMAOUI, A et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 8, pp 1543-1547, issn 0031-8965, 5 p.Conference Paper

Integration of PtSi in p-Type MOSFETs Using a Sacrificial Low-Temperature Germanidation ProcessBREIL, N; DUBOIS, E; HALIMAOUI, A et al.IEEE electron device letters. 2008, Vol 29, Num 2, pp 152-154, issn 0741-3106, 3 p.Article

Work function tuning through dopant scanning and related effects in Ni fully silicided gate for sub-45nm nodes CMOSAIME, D; FROMENT, B; LAVIRON, C et al.International Electron Devices Meeting. 2004, pp 87-90, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

Anodic oxidation of p⁺-type porous silicon having pores uniformly covered with GeGELLOZ, B; HALIMAOUI, A; CAMPIDELLI, Y et al.Physica status solidi. A. Applied research. 2003, Vol 197, Num 1, pp 123-127, issn 0031-8965, 5 p.Conference Paper

Sub-micrometre luminescent porous silicon structures using lithographically patterned substratesNASSIOPOULOS, A. G; GRIGOROPOULOS, S; CANHAM, L et al.Thin solid films. 1995, Vol 255, Num 1-2, pp 329-333, issn 0040-6090Conference Paper

Photoluminescence of high porosity and of electrochemically oxidized porous silicon layersBSIESY, A; VIAL, J. C; GASPARD, F et al.Surface science. 1991, Vol 254, Num 1-3, pp 195-200, issn 0039-6028, 6 p.Article

Shallow trench isolation based on selective formation of oxidized porous siliconGHARBI, A; REMAKI, B; HALIMAOUI, A et al.Microelectronic engineering. 2011, Vol 88, Num 7, pp 1214-1216, issn 0167-9317, 3 p.Conference Paper

Low-temperature RPCVD of Si, SiGe alloy, and Si_1―yC_y films on Si substrates using trisilane (Silcore^®)GOUYE, A; KERMARREC, O; HALIMAOUI, A et al.Journal of crystal growth. 2009, Vol 311, Num 13, pp 3522-3527, issn 0022-0248, 6 p.Article

Reduction of ion beam induced and atmospheric ageing of porous silicon using Al and SiO₂ capsGIADDUI, T; FORCEY, K. S; EARWAKER, L. G et al.Journal of physics. D, Applied physics (Print). 1996, Vol 29, Num 6, pp 1580-1586, issn 0022-3727Article

Small-angle X-ray scattering study of the microstructure of highly porous siliconNAUDON, A; GOUDEAU, P; HALIMAOUI, A et al.Journal de physique. IV. 1993, Vol 3, Num 8, pp 349-352, issn 1155-4339, 1Conference Paper

Low-pressure vapor-phase epitaxy of silicon on porous siliconVESCAN, L; BOMCHIL, G; HALIMAOUI, A et al.Materials letters (General ed.). 1988, Vol 7, Num 3, pp 94-98, issn 0167-577XArticle

Optimized nickel silicide process formation for high performance sub-65nm CMOS nodesFROMENT, B; CARRON, V; MORAND, Y et al.Proceedings - Electrochemical Society. 2004, pp 191-201, issn 0161-6374, isbn 1-56677-406-3, 11 p.Conference Paper

Advanced junction engineering for 60nm-CMOS transistorsMÜLLER, M; BIDAUD, M; BOEUF, F et al.ESSCIRC 2002 : European solid-state circuits conferenceEuropean solid-state device research conference. 2002, pp 315-318, isbn 88-900847-8-2, 4 p.Conference Paper

Optical absorption evidence of a quantum size effect in porous siliconSAGNES, I; HALIMAOUI, A; VINCENT, G et al.Applied physics letters. 1993, Vol 62, Num 10, pp 1155-1157, issn 0003-6951Article

Porous silicon : material properties, visible photo- and electroluminescenceBOMCHIL, G; HALIMAOUI, A; SAGNES, I et al.Applied surface science. 1993, Vol 65-66, pp 394-407, issn 0169-4332Conference Paper

Visible photoluminescence from porous silicon : a quantum confinement effect mainly due to holes ?VOOS, M; UZAN, P; DELANDE, C et al.Applied physics letters. 1992, Vol 61, Num 10, pp 1213-1215, issn 0003-6951Article

Triple Gate Oxide by nitrogen implantation integrated in a 0.13μm CMOS flowCARRERE, J-P; GROUILLET, A; GUYADER, F et al.ESSCIRC 2002 : European solid-state circuits conferenceEuropean solid-state device research conference. 2002, pp 155-158, isbn 88-900847-8-2, 4 p.Conference Paper