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Results 1 to 25 of 20175

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METHODE A 2 FREQUENCES POUR DES MESURES DE F.E.M. DE HALL DANS DES MATERIAUX A RESISTANCE ELEVEE AVEC UNE BASSE MOBILITE DES PORTEURS DE CHARGEALEKSANDROV AL; VEDENEEV AS; GULYAEV IB et al.1982; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1982; NO 2; PP. 163-166; BIBL. 7 REF.Article

ANALYSIS OF SYMMETRICAL HALL PLATES WITH FINITE CONTACTSVERSNEL W.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 7; PP. 4659-4666; BIBL. 13 REF.Article

HALL EFFECT MEASUREMENTS IN HIGH-TEMPERATURE DEPOSITED AND HEAT TREATED FILMS OF INTE AND INSEKRISHNA SASTRY DV; JAYARAMA REDDY P.1983; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1983; VOL. 75; NO 2; PP. K183-K185; BIBL. 4 REF.Article

INFLUENCE DE LA STRUCTURE FRAGMENTAIRE SUR LES EFFETS GALVANOMAGNETIQUES DANS LES COUCHES MINCES SEMICONDUCTRICESTKHORIK YU O.1978; DOP. AKAD. NAUK UKRAJIN. R.S.R., A; S.S.S.R.; DA. 1978; NO 4; PP. 338-341; ABS. ANGL.; BIBL. 15 REF.Article

MICROSWITCHES PLAY KEY ROLE IN ADVANCING AUTOMATIONYANAGISAWA H.1982; JEE, J. ELECTRON. ENG.; ISSN 0385-4507; JPN; DA. 1982; VOL. 19; NO 186; PP. 52-55Article

THE HALL MOBILITY OF POLYCRYSTALLINE GASB FILMSPATEL SM; MAHAJAN MD.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 59; NO 2; PP. K199-K202; BIBL. 9 REF.Article

MOBILITE DE HALL DES PORTEURS MAJORITAIRES DANS LE GERMANIUMMIERIN A YA; KULAKOV VM; ULMANIS UA et al.1976; LATV. P.S.R. ZINAT. AKAD. VEST., FIZ. TEH. ZINAT. SER.; S.S.S.R.; DA. 1976; NO 5; PP. 31-36; ABS. ANGL.; BIBL. 15 REF.Article

THE HALL MOBILITY OF CARRIERS HOPPING IN AN IMPURITY BAND. II: NUMERICAL RESULTS AND ANALYSIS FOR THE R-PERCOLATION MODELBUTCHER PN; MCINNES JA.1981; PHILOS. MAG., B; ISSN 0141-8637; GBR; DA. 1981; VOL. 44; NO 5; PP. 595-601; BIBL. 9 REF.Article

ANOMALOUS HALL EFFECT IN COLLISIONLESS ZERO-GAP SEMICONDUCTORSLEWINER C; BASTARD G.1978; J. PHYS. C; GBR; DA. 1978; VOL. 11; NO 23; PP. 4727-4739; BIBL. 10 REF.Article

THE HOPPING HALL MOBILITY IN DISORDERED SYSTEMS.BOTTGER H; BRYKSIN VV.1977; SOLID STATE COMMUNIC.; G.B.; DA. 1977; VOL. 23; NO 4; PP. 227-231; BIBL. 6 REF.Article

ANALYSIS OF A CIRCULAR HALL PLATE WITH EQUAL FINITE CONTACTSVERSNEL W.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 1; PP. 63-68; BIBL. 17 REF.Article

HALL-EFFECT ANALYSIS OF PERSISTENT PHOTOCURRENTS IN N-GAAS LAYERSQUEISSER HJ; THEODOROU DE.1979; PHYS. REV. LETTERS; USA; DA. 1979; VOL. 43; NO 5; PP. 401-404; BIBL. 16 REF.Article

MEHRZWECKHALLE MIT WAERMEPUMPE = MULTIPURPOSE HALL WITH HEAT PUMP HEATING = HALL A USAGES MULTIPLES EQUIPE DE POMPE A CHALEURFLUCK D; MERKERT E.1979; TECH. AM BAU; DEU; DA. 1979; NO 9; PP. 735-738Article

OPTICALLY ENHANCED HALL MOBILITY IN GAAS.PAESLER MA; QUEISSER HJ.1977; SOLID STATE COMMUNIC.; G.B.; DA. 1977; VOL. 21; NO 12; PP. 1143-1145; BIBL. 5 REF.Article

PHOTOLUMINESCENCE IN GALLIUM ARSENIDE IRRADIATED WITH THERMAL NEUTRONSGARRIDO J; CASTANO JL; PIQUERAS J et al.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 65; NO 1; PP. 103-106; ABS. FRE; BIBL. 10 REF.Article

THE HALL MOBILITY OF CARRIERS HOPPING IN AN IMPURITY BANDBUTCHER PN; KUMAR AA.1980; PHILOS. MAG., B; ISSN 0141-8637; GBR; DA. 1980; VOL. 42; NO 2; PP. 201-212; BIBL. 21 REF.Article

ANISOTROPY OF ELECTRICAL CONDUCTIVITY AND HALL EFFECT IN MNAS0.95P0.05BOEDECKER G; BERG H; FUNKE K et al.1980; PHYS. LETT. SECT. A; ISSN 0375-9601; NLD; DA. 1980; VOL. 78; NO 2; PP. 205-208; BIBL. 15 REF.Article

THE HALL CROSS IN PERPENDICULAR INHOMOGENEOUS MAGNETIC FIELDBAIRD AW.1979; I.E.E.E. TRANS. MAGNET.; USA; DA. 1979; VOL. 15; NO 4; PP. 1138-1149; BIBL. 12 REF.Article

MOBILITE DE HALL DES PORTEURS DANS LES AZOTURES D'ARGENTZAKHAROV YU A; SIDORIN YU YU; KUCHIS EV et al.1979; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; ISSN 0002-337X; SUN; DA. 1979; VOL. 15; NO 8; PP. 1397-1401; BIBL. 10 REF.Article

GALVANOMAGNETIC EFFECTS IN P-TYPE SILICON. APPLICATION TO ELECTRICALLY ACTIVE IMPURITY CONTENTSROIZES A; SCHUTTLER R.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 50; NO 2; PP. 399-409; ABS. FRE; BIBL. 13 REF.Article

HAL EFFECT AND IMPURITY CONDUCTION IN SUBSTITUTIONALLY DOPED AMORPHOUS SILICON.LE COMBER PG; JONES DL; SPEAR WE et al.1977; PHILOS. MAG.; G.B.; DA. 1977; VOL. 35; NO 5; PP. 1173-1187; BIBL. 24 REF.Article

THE EFFECT OF HYDROSTATIC PRESSURE ON THE ANOMALOUS SIGN REVERSAL OF THE HALL COEFFICIENT IN TELLURIUMBALYNAS V; DOBROVOLSKIS Z; HOERSTEL W et al.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 64; NO 2; PP. K115-K117; BIBL. 7 REF.Article

THE ANOMALOUS HALL EFFECTBERGMANN G.1979; PHYS. TODAY; ISSN 0031-9228; USA; DA. 1979; VOL. 32; NO 8; PP. 25-30; (5 P.); BIBL. 10 REF.Article

ANISOTROPY OF GALVANOMAGNETIC EFFECTS IN IRRADIATED SILICON WITH LAYER-INHOMOGENEITYSEMENYUK AK; VARENTSOV MD.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 50; NO 2; PP. K169-K173; BIBL. 7 REF.Article

SIMPLE AND RAPID DETERMINATION OF CARRIER CONCENTRATION AND MOBILITY PROFILES IN GA ASESTEVE J; PONSE F; BACHEM KH et al.1981; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1981; VOL. 82; NO 3; PP. 287-292; BIBL. 5 REF.Article

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