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MICROSWITCHES PLAY KEY ROLE IN ADVANCING AUTOMATIONYANAGISAWA H.1982; JEE, J. ELECTRON. ENG.; ISSN 0385-4507; JPN; DA. 1982; VOL. 19; NO 186; PP. 52-55Article

ANOMALOUS HALL EFFECT IN COLLISIONLESS ZERO-GAP SEMICONDUCTORSLEWINER C; BASTARD G.1978; J. PHYS. C; GBR; DA. 1978; VOL. 11; NO 23; PP. 4727-4739; BIBL. 10 REF.Article

ANISOTROPY OF ELECTRICAL CONDUCTIVITY AND HALL EFFECT IN MNAS0.95P0.05BOEDECKER G; BERG H; FUNKE K et al.1980; PHYS. LETT. SECT. A; ISSN 0375-9601; NLD; DA. 1980; VOL. 78; NO 2; PP. 205-208; BIBL. 15 REF.Article

THE HALL CROSS IN PERPENDICULAR INHOMOGENEOUS MAGNETIC FIELDBAIRD AW.1979; I.E.E.E. TRANS. MAGNET.; USA; DA. 1979; VOL. 15; NO 4; PP. 1138-1149; BIBL. 12 REF.Article

CHARACTERIZATION OF DEEP TRAPPING CENTRES IN N-TYPE LIQUID PHASE EPITAXIAL GAAS BY HALL EFFECTSAXENA AK.1980; INDIAN J. PURE APPL. PHYS.; ISSN 0019-5596; IND; DA. 1980; VOL. 18; NO 7; PP. 483-488; BIBL. 14 REF.Article

TEMPERATURE AND POTENTIAL-DISTRIBUTIONS DETERMINATION METHOD FOR HALL PLATES, CONSIDERING THE EFFECT OF TEMPERATURE DEPENDENT CONDUCTIVITY AND HALL COEFFICIENTMIMIZUKA T.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 2; PP. 157-161; BIBL. 5 REF.Article

L'EFFET HALL ANORMAL DANS LES SEMICONDUCTEURS FERROMAGNETIQUESNAGAEV EH L; SOKOLOVA EH B.1977; FIZ. TVERD. TELA; S.S.S.R.; DA. 1977; VOL. 19; NO 3; PP. 732-739; BIBL. 10 REF.Article

THE EFFECT OF HYDROSTATIC PRESSURE ON THE ANOMALOUS SIGN REVERSAL OF THE HALL COEFFICIENT IN TELLURIUMBALYNAS V; DOBROVOLSKIS Z; HOERSTEL W et al.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 64; NO 2; PP. K115-K117; BIBL. 7 REF.Article

THE ANOMALOUS HALL EFFECTBERGMANN G.1979; PHYS. TODAY; ISSN 0031-9228; USA; DA. 1979; VOL. 32; NO 8; PP. 25-30; (5 P.); BIBL. 10 REF.Article

MOBILITE DE HALL DES ELECTRONS DANS GE<AU, SB> COMPENSE AUX BASSES TEMPERATURES DANS DES CONDITIONS D'ECLAIREMENT AUXILIAIREKUROVA IA; IDALBAEV AM; KOLBASINA IP et al.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 10; PP. 2054-2057; BIBL. 12 REF.Article

ON THE CHARACTERIZATION OF SEMI-INSULATING GAAS BY HALL, PHOTO-HALL, PHOTOCONDUCTIVITY, AND PHOTOMAGNETOELECTRIC MEASUREMENTS.LOOK DC.1978; J. ELECTRON. MATER.; U.S.A.; DA. 1978; VOL. 7; NO 1; PP. 147-157; BIBL. 8 REF.Article

THEORIE DE L'EFFET HALL ANORMAL DES VERRES DE SPINVEDYAEV AV; GRANOVSKIJ AB; KAMINSKAYA EP et al.1979; PIS'MA ZH. EKSPER. TEOR. FIZ.; SUN; DA. 1979; VOL. 30; NO 11; PP. 685-688; BIBL. 4 REF.Article

ACCOUNT OF SCATTERING-INDEPENDENT CONTRIBUTIONS TO THE HALL CONDUCTIVITY IN FERROMAGNETS.SMIT J; BERGER L.1978; PHYS. REV., B; U.S.A.; DA. 1978; VOL. 17; NO 3; PP. 1450-1453; BIBL. DISSEM.Article

PROPRIETES ELECTRIQUES ET GALVANOMAGNETIQUES DE FECR2S4EHJVAZOV EH A; RUSTAMOV AG; IBRAGIMOV BB et al.1977; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1977; VOL. 13; NO 3; PP. 430-432; BIBL. 13 REF.Article

INCOHERENT ANNEALING OF IMPLANTED LAYERS IN GAASDAVIES DE; MCNALLY PJ; LORENZO JP et al.1982; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 4; PP. 102-103; BIBL. 6 REF.Article

ON THE QUANTIZATION OF THE HALL IMPEDANCEPOST EJ.1983; PHYSICS LETTERS SECTION A; ISSN 0375-9601; NLD; DA. 1983; VOL. 94; NO 8; PP. 343-345; BIBL. 4 REF.Article

HALL-EFFEKT-UNTERSUCHUNGEN AN FESTEM KALZIUMKARBID. = ETUDE DE L'EFFET HALL DANS DU CARBURE DE CALCIUM SOLIDERETTKOWSKI W; GEILHUFE C.1977; Z. PHYS. CHEM., LEIPZIG; DTSCH.; DA. 1977; VOL. 258; NO 4; PP. 803-804; BIBL. 4 REF.Article

INFLUENCE DE L'ANISOTROPIE DES SURFACES ISOENERGETIQUES DES TROUS LOURDS SUR LE COEFFICIENT DE HALL DE MU -5NSBALIEV MI; GASHIMZADE M; DZHABBAROV RM et al.1977; AKAD. NAUK AZERBAJDZH. S.S.R., DOKL.; S.S.S.R.; DA. 1977; NO 9; PP. 15-18; ABS. AZERB. ANGL.Article

ON MACROSCOPIC QUANTUM PHENOMENA ASSOCIATED WITH QUANTISED HALL EFFECTIMRY Y.1983; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1983; VOL. 16; NO 18; PP. 3501-3511; BIBL. 28 REF.Article

DISPOSITIFS A EFFET HALL ET LEURS APPLICATIONSALTIERI G.1979; NOUV. REV. SON; FRA; DA. 1979; VOL. 31; PP. 145-147Article

A WIDE-RANGE, CONSTANT-CURRENT GENERATOR FOR USE WITH HALL MEASUREMENTS.LEACH MF.1977; J. PHYS. E; G.B.; DA. 1977; VOL. 10; NO 9; PP. 879-880; BIBL. 1 REF.Article

HALL MEASUREMENTS AND GRAIN-SIZE EFFECTS IN POLYCRYSTALLINE SILICONGHOSH AK; ROSE A; MARUSKA HP et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 6; PP. 544-546; BIBL. 11 REF.Article

THE INFLUENCE OF TRANSVERSE MAGNETORESISTANCE ON HALL-EFFECT MEASUREMENTS ON N-TYPE GERMANIUM AND OTHER SEMICONDUCTORS.PARTAIN LD; LAKSHMINARAYANA MR; WESTGATE CR et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 6; PP. 2570-2575; BIBL. 13 REF.Article

CONCERNING THE SPLIT-ELECTRODE METHODE FOR THE MEASUREMENT OF HALL CURRENTS. APPLICATION TO IRRADIATED SEMICONDUCTING DIAMOND.HARRIS AJ; VERMEULEN LA.1976; J. PHYS. C; G.B.; DA. 1976; VOL. 9; NO 20; PP. 3775-3779; BIBL. 7 REF.Article

HALL EFFECT SWITCHING DEVICES.MARCHANT AH.1977; NEW ELECTRON.; G.B.; DA. 1977; VOL. 10; NO 10; PP. 79-80Article

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