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METHODE A 2 FREQUENCES POUR DES MESURES DE F.E.M. DE HALL DANS DES MATERIAUX A RESISTANCE ELEVEE AVEC UNE BASSE MOBILITE DES PORTEURS DE CHARGEALEKSANDROV AL; VEDENEEV AS; GULYAEV IB et al.1982; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1982; NO 2; PP. 163-166; BIBL. 7 REF.Article

EFFECTIVE P-TYPE DOPING OF DIAMOND BY BORON ION IMPLANTATIONBRAUNSTEIN G; KALISH R.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 4; PP. 2106-2108; BIBL. 15 REF.Article

GROWTH AND ELECTRICAL PROPERTIES OF CUPROUS TELLURIDE THIN FILMSDAWAR AL; ANIL KUMAR; PARTAP KUMAR et al.1983; JOURNAL OF THE LESS-COMMON METALS; ISSN 0022-5088; CHE; DA. 1983; VOL. 91; NO 1; PP. 83-88; BIBL. 26 REF.Article

THE HALL MOBILITY OF POLYCRYSTALLINE GASB FILMSPATEL SM; MAHAJAN MD.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 59; NO 2; PP. K199-K202; BIBL. 9 REF.Article

RELATIONSHIP OF MBE GROWTH PARAMETERS WITH THE ELECTRICAL PROPERTIES OF THIN (100) INAS EPILAYERSGRANGE JD; PARKER EHC; KING RM et al.1979; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1979; VOL. 12; NO 9; PP. 1601-1612; BIBL. 1 P.Article

MOBILITE DE HALL DES PORTEURS MAJORITAIRES DANS LE GERMANIUMMIERIN A YA; KULAKOV VM; ULMANIS UA et al.1976; LATV. P.S.R. ZINAT. AKAD. VEST., FIZ. TEH. ZINAT. SER.; S.S.S.R.; DA. 1976; NO 5; PP. 31-36; ABS. ANGL.; BIBL. 15 REF.Article

THE ELECTRIC AND PHOTOELECTRIC PROPERTIES OF TLSBSE2 CRYSTALS IN THE REGION OF IMPURITY CONDUCTIONGITSU DV; GRINCHESHEN IN; POPOVICH NS et al.1983; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1983; VOL. 76; NO 1; PP. K5-K7; BIBL. 2 REF.Article

ANALYSIS OF SYMMETRICAL HALL PLATES WITH FINITE CONTACTSVERSNEL W.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 7; PP. 4659-4666; BIBL. 13 REF.Article

FEATURES OF INDIUM ANTIMONIDE FILMS.KRAVCHENKO AF; MOROZOV BV; SKOK EM et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 35; NO 2; PP. 755-759; ABS. RUSSE; BIBL. 15 REF.Article

HALL EFFECT MEASUREMENTS IN HIGH-TEMPERATURE DEPOSITED AND HEAT TREATED FILMS OF INTE AND INSEKRISHNA SASTRY DV; JAYARAMA REDDY P.1983; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1983; VOL. 75; NO 2; PP. K183-K185; BIBL. 4 REF.Article

MIXED SCATTERING MECHANISM OF FREE CURRENT CARRIERS IN SNBI4TE7 SINGLE CRYSTALSTICHY L; FRUMAR M; KINCL M et al.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 64; NO 2; PP. 461-466; ABS. GER; BIBL. 10 REF.Article

INFLUENCE DE LA STRUCTURE FRAGMENTAIRE SUR LES EFFETS GALVANOMAGNETIQUES DANS LES COUCHES MINCES SEMICONDUCTRICESTKHORIK YU O.1978; DOP. AKAD. NAUK UKRAJIN. R.S.R., A; S.S.S.R.; DA. 1978; NO 4; PP. 338-341; ABS. ANGL.; BIBL. 15 REF.Article

ANALYSIS OF A CIRCULAR HALL PLATE WITH EQUAL FINITE CONTACTSVERSNEL W.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 1; PP. 63-68; BIBL. 17 REF.Article

HALL-EFFECT ANALYSIS OF PERSISTENT PHOTOCURRENTS IN N-GAAS LAYERSQUEISSER HJ; THEODOROU DE.1979; PHYS. REV. LETTERS; USA; DA. 1979; VOL. 43; NO 5; PP. 401-404; BIBL. 16 REF.Article

INSTALLATION POUR LES MESURES HALL DANS LES CHAMPS ELECTRIQUES FORTSDOBROVOL'SKIJ VN; ZHARKIKH YU S; KROLEVETS AN et al.1978; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1978; NO 2; PP. 230-231; BIBL. 2 REF.Article

GEOMETRICAL MAGNETORESISTANCE AND NEGATIVE DIFFERENTIAL MOBILITY IN SEMICONDUCTOR DEVICES.SHUR M.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 5; PP. 389-401; BIBL. 16 REF.Article

RELATION ENTRE CONCENTRATION ET MOBILITE DES PORTEURS DANS LES PHASES DE TYPE METALLIQUENEMCHENKO VF.1979; DOKL. AKAD. NAUK UKR. S.S.R., A; UKR; DA. 1979; NO 7; PP. 582-584; ABS. ENG; BIBL. 8 REF.Article

THE HALL MOBILITY OF CARRIERS HOPPING IN AN IMPURITY BAND. II: NUMERICAL RESULTS AND ANALYSIS FOR THE R-PERCOLATION MODELBUTCHER PN; MCINNES JA.1981; PHILOS. MAG., B; ISSN 0141-8637; GBR; DA. 1981; VOL. 44; NO 5; PP. 595-601; BIBL. 9 REF.Article

THE HOPPING HALL MOBILITY IN DISORDERED SYSTEMS.BOTTGER H; BRYKSIN VV.1977; SOLID STATE COMMUNIC.; G.B.; DA. 1977; VOL. 23; NO 4; PP. 227-231; BIBL. 6 REF.Article

PROPERTIES OF SILICON-DOPED ALXGA1-XAS GROWN BY MOLECULAR BEAM EPITAXYFISCHER R; DRUMMOND TJ; THORNE RE et al.1983; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1983; VOL. 99; NO 4; PP. 391-397; BIBL. 12 REF.Article

A CORRELATION OF ATOMIC AND ELECTRICAL MEASUREMENTS OF CR AND RESIDUAL DONORS IN THERMALLY PROCESSED SEMI-INSULATING GAASVASUDEU PK; WILSON RG; EVANS CA JR et al.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 6; PP. 565-567; BIBL. 9 REF.Article

IR ABSORPTION IN P-TYPE PB0.97SN0.03SEJAIN AK; GUPTA BK; AGNIHOTRI OP et al.1981; J. PHYS. CHEM. SOLIDS; ISSN 0022-3697; USA; DA. 1981; VOL. 42; NO 11; PP. 985-986; BIBL. 14 REF.Article

SCALING FOR THE FREQUENCY-DEPENDENT CONDUCTIVITY IN DISORDERED ELECTRONIC SYSTEMSSHAPIRO B; ABRAHAMS E.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 24; NO 8; PP. 4889-4891; BIBL. 19 REF.Article

SIMPLE AND RAPID DETERMINATION OF CARRIER CONCENTRATION AND MOBILITY PROFILES IN GA ASESTEVE J; PONSE F; BACHEM KH et al.1981; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1981; VOL. 82; NO 3; PP. 287-292; BIBL. 5 REF.Article

DETERMINATION DE LA MOBILITE ET DE LA CONCENTRATION DES PORTEURS DANS LES SEMICONDUCTEURS PAR DES METHODES SANS CONTACT DE MAGNETOPLASMAPOZHELA YU K; TOLUTIS RB.1980; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1980; VOL. 14; NO 6; PP. 1193-1201; BIBL. 7 REF.Article

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