ICPEPA-3: Proceedings of Symposium A on Photo-Excited Processes, Diagnostics and Applications of the 1999 E-MRS Spring Conference, Strasbourg, France, June 1-4, 1999PELED, Aaron; HESS, Peter; HANABUSA, Mitsugu et al.Applied surface science. 2000, Vol 154-55, issn 0169-4332, 762 p.Conference Proceedings

Electrical and photovoltaic properties of iron-silicide/silicon heterostructures formed by pulsed laser depositionZHENGXIN LIU; WATANABE, Motoki; HANABUSA, Mitsugu et al.Thin solid films. 2001, Vol 381, Num 2, pp 262-266, issn 0040-6090Article

Enlargement of location controlled Si grains by dual-beam excimer-laser with bump structuresBURTSEV, A; ISHIHARA, R.Applied surface science. 2000, Vol 154-55, pp 152-158, issn 0169-4332Conference Paper

In situ and real-time ellipsometry monitoring of submicron titanium nitride/titanium silicide electronic devicesPATSALAS, P; CHARITIDIS, C; LOGOTHETIDIS, S et al.Applied surface science. 2000, Vol 154-55, pp 256-262, issn 0169-4332Conference Paper

Deposition and annealing of tantalum pentoxide films using 172 nm excimer lampZHANG, J.-Y; LIM, B; BOYD, I. W et al.Applied surface science. 2000, Vol 154-55, pp 382-386, issn 0169-4332Conference Paper

On the reaction mechanism in laser-induced deposition of tungsten microstructures from WF₆/H₂PIGLMAYER, K; SCHIECHE, H; CHABICOVSKY, R et al.Applied surface science. 2000, Vol 154-55, pp 365-368, issn 0169-4332Conference Paper

Pulsed laser deposition of metals in low pressure inert gasSTURM, K; FÄHLER, S; KREBS, H.-U et al.Applied surface science. 2000, Vol 154-55, pp 462-466, issn 0169-4332Conference Paper

Single and multiple ultrashort laser pulse ablation threshold of Al₂O₃ (corundum) at different etch phasesASHKENASI, D; STOIAN, R; ROSENFELD, A et al.Applied surface science. 2000, Vol 154-55, pp 40-46, issn 0169-4332Conference Paper

The effect of target temperature on the deterioration of metal surfaces under pulsed laser irradiationKANTOR, Z; GERETOVSZKY, Z; SZÖRENYI, T et al.Applied surface science. 2000, Vol 154-55, pp 78-82, issn 0169-4332Conference Paper

The physical mechanisms of short-pulse laser ablationVON DER LINDE, D; SOKOLOWSKI-TINTEN, K.Applied surface science. 2000, Vol 154-55, pp 1-10, issn 0169-4332Conference Paper

Ultraviolet annealing of thin films grown by pulsed laser depositionZHANG, J.-Y; BOYD, I. W.Applied surface science. 2000, Vol 154-55, pp 17-21, issn 0169-4332Conference Paper

Mathematical modelling of pulsed laser ablated flowsITINA, T. E; MARINE, W; AUTRIC, M et al.Applied surface science. 2000, Vol 154-55, pp 60-65, issn 0169-4332Conference Paper

Composition and phase structure in laser deposited and post-annealed Pb_1-3y/2Nd_y(Zr_xTi_1-x)O₃ thin filmsLAPPALAINEN, J; LANTTO, V.Applied surface science. 2000, Vol 154-55, pp 118-122, issn 0169-4332Conference Paper

IR-RTI oscillations during laser induced epitaxial GaN film growth and the role of free carrier concentrationHÜTTNER, B; GROSS, M; RUPP, T et al.Applied surface science. 2000, Vol 154-55, pp 263-268, issn 0169-4332Conference Paper

On the delay time in photoluminescence of Si-nanoclusters, produced by laser ablationLUK'YANCHUK, B; MARINE, W.Applied surface science. 2000, Vol 154-55, pp 314-319, issn 0169-4332Conference Paper

Effects of rapid thermal annealing on ripple growth in excimer laser-irradiated silicon-dioxide/silicon substratesYU, J. J; LU, Y. F.Applied surface science. 2000, Vol 154-55, pp 670-674, issn 0169-4332Conference Paper

Laser cooling and photoionization of alkali atomsARIMONDO, E; CIAMPINI, D; FUSO, F et al.Applied surface science. 2000, Vol 154-55, pp 527-535, issn 0169-4332Conference Paper

Properties of ion-assisted pulsed laser deposited H-BN/C-BN layer systemsWEISSMANTEL, S; REISSE, G.Applied surface science. 2000, Vol 154-55, pp 428-433, issn 0169-4332Conference Paper

The influence of ambient temperature on KrF laser ablation of polyimide in airBRAUN, A; ZIMMER, K; BIGL, F et al.Applied surface science. 2000, Vol 154-55, pp 73-77, issn 0169-4332Conference Paper

The need of sub-nanosecond resolution to reveal new features during laser induced solidificationSIEGEL, J; SOLIS, J; AFONSO, C. N et al.Applied surface science. 2000, Vol 154-55, pp 130-134, issn 0169-4332Conference Paper

Wettability characteristics of carbon steel modified with CO₂, Nd :YAG, excimer and high power diode lasersLAWRENCE, J; LI, L.Applied surface science. 2000, Vol 154-55, pp 664-669, issn 0169-4332Conference Paper

Enclosed surface laser ablation of laminated aluminium foilSTEWART, R; LI, L; THOMAS, D et al.Applied surface science. 2000, Vol 154-55, pp 47-52, issn 0169-4332Conference Paper

Preparation of single crystalline regions in amorphous silicon layers on glass by Ar⁺ laser irradiationANDRÄ, G; BERGMANN, J; FALK, F et al.Applied surface science. 2000, Vol 154-55, pp 123-129, issn 0169-4332Conference Paper

Polarization-dependent laser crystallization of Se-containing amorphous chalcogenide filmsLYUBIN, V; KLEBANOV, M; MITKOVA, M et al.Applied surface science. 2000, Vol 154-55, pp 135-139, issn 0169-4332Conference Paper

Cubic aluminum nitride and gallium nitride thin films prepared by pulsed laser depositionWANG, L. D; KWOK, H. S.Applied surface science. 2000, Vol 154-55, pp 439-443, issn 0169-4332Conference Paper