THEORETICAL CALCULATION OF NORMALLY-OFF GAAS MESFET CHARACTERISTICS INCLUDING EFFECTS OF SURFACE DEPLETION LAYERHARIU T.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 2; PART. 1; PP. L77-L79; BIBL. 6 REF.Article

DELAY TIME OF SWITCHING DIODES BASED ON SPACE-CHARGE OVERLAPPING.HARIU T; SHIBATA Y.1976; J.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 4; PP. 480-481; BIBL. 8 REF.Article

EXPERIMENTAL VERIFICATION OF NEW GUNN-EFFECT REFLECTION-INSENSITIVE PULSE REGENERATORHARIU T; HARTNAGEL H.1973; ELECTRON. LETTERS; G.B.; DA. 1973; VOL. 9; NO 5; PP. 112-113; BIBL. 4 REF.Serial Issue

NEW GUNN-EFFECT THREE-TERMINAL PLUSE REGENERATOR BY PLANAR PHOTOLITHOGRAPHY.HARIU T; HARTNAGEL HL.1974; INTERNATION. J. ELECTRON.; G.B.; DA. 1974; VOL. 37; NO 4; PP. 451-455; BIBL. 3 REF.Article

DELAYED SWITCHING IN CRYSTALLINE SI DIODES WITH DEEP IMPURITY LEVELSHARIU T; SHIBATA Y; ISHIKAWA H et al.1972; JAP. J. APPL. PHYS.; JAP.; DA. 1972; VOL. 11; NO 11; PP. 1749; BIBL. 3 REF.Serial Issue

GASB SCHOTTKY DIODES FOR INFRARED DETECTORSNAGAD Y; HARIU T; SHIBATA Y et al.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 4; PP. 407-411; BIBL. 18 REF.Article

ANALYSIS OF NEGATIVE RESISTANCE BASED ON SPACE-CHARGE-LAYERS OVERLAPPING IN SWITCHING DIODES WITH DEEP IMPURITY LEVELS.HARIU T; ISHIKAWA H; SHIBATA Y et al.1974; JAP. J. APPL. PHYS.; JAP.; DA. 1974; VOL. 13; NO 11; PP. 1828-1836; BIBL. 14 REF.Article

NEW ETCH PITS ON GAAS REVEALED BY ETCHING AFTER ANODIC OXIDIZATION.MATSUSHITA K; HARIU T; ADACHI H et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 4; PP. 1722-1723; BIBL. 5 REF.Article

SPREAD OF TOTAL ENERGY DISTRIBUTION OF THERMAL FIELD-EMITTED ELECTRONS FROM LAB₆.ADACHI H; SHIBUYA Y; HARIU T et al.1977; J. PHYS. D; G.B.; DA. 1977; VOL. 10; NO 8; PP. L113-L115; BIBL. 11 REF.Article

DC-BIAS-DEPENDENT DIELECTRIC DISPERSION PROPERTIES OF EVAPORATED SILICON OXIDE FILMSADACHI H; YAMAZAKI Y; HARIU T et al.1978; J. PHYS. D; GBR; DA. 1978; VOL. 11; NO 10; PP. 1421-1429; BIBL. 8 REF.Article

TRANSIENT RESPONSE SIMULATION OF SEMICONDUCTOR DIODES WITH DEEP IMPURITY LEVELSYAMAMOTO T; NAGAI M; HARIU T et al.1979; JAP. J. APPL. PHYS.; JPN; DA. 1979; VOL. 18; NO 4; PP. 771-777; BIBL. 8 REF.Article

REACTIVE SPUTTERING OF GALLIUM NITRIDE THIN FILMS FOR GAAS MIS STRUCTURES.HARIU T; USUBA T; ADACHI H et al.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 4; PP. 252-253; BIBL. 6 REF.Article

Low temperature epitaxial growth of highly-conductive ZnSe layers in mixed plasma of hydrogen and hydrogen chlorideYAMAUCHI, S; HARIU, T; MATSUSHITA, K et al.Japanese journal of applied physics. 1987, Vol 26, Num 6, pp L893-L895, issn 0021-4922, 2Article

Plasma-assisted epitaxial growth of GaSb in hydrogen plasmaSATO, Y; MATSUSHITA, K; HARIU, T et al.Applied physics letters. 1984, Vol 44, Num 6, pp 592-594, issn 0003-6951Article

Optical emission spectroscopy for plasma-assisted epitaxial growth of (In, Ga) (As, Sb)FANG, S. F; HARIU, T; ONO, S et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1991, Vol 9, Num 4, pp 2253-2257, issn 0734-2101Article

STATIONNARY GUNN DOMAINS CREATED BY ANODE DOPING GRADIENT CURRENT-DENSITY REDUCTION.COLQUHOUN A; HARIU T; HARTNAGEL HL et al.1974; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1974; VOL. 21; NO 11; PP. 681-687; BIBL. 10 REF.Article

About Duval's conjectureHARIU, T; NOWOTKA, D.Lecture notes in computer science. 2003, pp 316-324, issn 0302-9743, isbn 3-540-40434-1, 9 p.Conference Paper

Interface characterization of ZnSe/GaAs heterojunctionsHARIU, T; YAMAUCHI, S; TANAKA, H et al.Applied surface science. 1991, Vol 48-49, pp 204-208, issn 0169-4332, 5 p.Conference Paper

Plasma-assisted epitaxial growth of InAsSUN FEI FANG; MATSUSHITA, K; HARIU, T et al.Applied physics letters. 1989, Vol 54, Num 14, pp 1338-1340, issn 0003-6951, 3 p.Article

The effect of hydrogen plasma on the low temperature epitaxial growth of InSbOHSHIMA, T; YAMAUCHI, S; HARIU, T et al.Japanese journal of applied physics. 1989, Vol 28, Num 1, pp L13-L15, issn 0021-4922, part 2Article

Quenching and recovery spectra of midgap levels (EL2) in semi-insulating GaAs measured by double-beam photoconductivityHARIU, T; SATO, T; KOMORI, H et al.Journal of applied physics. 1987, Vol 61, Num 3, pp 1068-1072, issn 0021-8979Article

Perfusion cholangiomanometry with papillary stimulation by dilute hydrochloric acidMATSUSHIRO, T; NAGASHIMA, H; YAMAMOTO, K et al.Surgery. 1984, Vol 95, Num 1, pp 96-101, issn 0039-6060Article

Problems of the human body model and electrostatic discharge part 2 : the HBM test for non-wired pins of LSIsSUZUKI, K; MURANOI, T; SUGITA, R et al.Semiconductor science and technology. 1998, Vol 13, Num 9, pp 972-975, issn 0268-1242Article

Ultrahigh vacuum in situ transmission electron microscopy observations of molecular-beam epitaxially grown InSb(111)YATA, M; TODA, A; NAGATSUYU, H et al.Journal of applied physics. 1988, Vol 63, Num 12, pp 5751-5755, issn 0021-8979Article

Low temperature epitaxial growth of ZnO layer by plasma-assisted epitaxyYAMAUCHI, S; HANDA, H; NAGAYAMA, A et al.Thin solid films. 1999, Vol 345, Num 1, pp 12-17, issn 0040-6090Conference Paper