Multiple subband occupancy in modulation-doped heterostructuresHARRIS, J. J.Acta electronica. 1988, Vol 28, pp 39-47, issn 0001-558XArticle

Evidence for dislocation-related amphoteric behaviour of Si dopant in high-mobility InSb thin filmsZHANG, T; HARRIS, J. J; CLOWES, S. K et al.Semiconductor science and technology. 2005, Vol 20, Num 12, pp 1153-1156, issn 0268-1242, 4 p.Article

Using live estimates and ultrasound measurements to predict beef carcass cutabilityMAY, S. G; MIES, W. L; EDWARDS, J. W et al.Journal of animal science. 2000, Vol 78, Num 5, pp 1255-1261, issn 0021-8812Article

Light emission and the quantum efficiency of lateral p-n junctions on patterned GaAs (100) substratesKOO, B. J; HARRIS, J. J; GARDNER, N. R et al.Microelectronics journal. 1999, Vol 30, Num 4-5, pp 403-407, issn 0959-8324Article

Investigation of delta-doped quantum wells for power FET applicationsROBERTS, J. M; HARRIS, J. J; WOODS, N. J et al.Superlattices and microstructures. 1998, Vol 23, Num 2, pp 187-190, issn 0749-6036Article

Searches for skyrmions in the limit of zero g-factorLEADLEY, D. R; NICHOLAS, R. J; MAUDE, D. K et al.Semiconductor science and technology. 1998, Vol 13, Num 7, pp 671-679, issn 0268-1242Article

Electrical properties of lateral p-n junctions formed on patterned (110) GaAs substratesGARDNER, N. R; WOODS, N. J; DOMINGUEZ, P. S et al.Semiconductor science and technology. 1997, Vol 12, Num 6, pp 737-741, issn 0268-1242Article

Determination of the transport properties of composite fermions under high hydrostatic pressureHOLMES, S; MAUDE, D. K; WILLIAMS, M. L et al.The Journal of physics and chemistry of solids. 1995, Vol 56, Num 3-4, pp 459-462, issn 0022-3697Conference Paper

Quantum transport in InAs_1-x/InSb strained layer superlatticesTAN LE; NORMAN, A. G; YUEN, W. T et al.Surface science. 1994, Vol 305, Num 1-3, pp 337-342, issn 0039-6028Conference Paper

Optical and electrical investigation of subband populations, mobilities and Fermi level pinning in delta-doped quantum wellsHARRIS, J. J; MURRAY, R; FOXON, C. T et al.Semiconductor science and technology. 1993, Vol 8, Num 1, pp 31-38, issn 0268-1242Article

Surface segregation effects of In in GaAsDOSANJH, S. S; ZHANG, X. M; SANSOM, D et al.Journal of applied physics. 1993, Vol 74, Num 4, pp 2481-2485, issn 0021-8979Article

The pressure dependence of the effective mass in a GaAs/AlGaAs heterojunctionWARBURTON, R. J; WATTS, M; NICHOLAS, R. J et al.Semiconductor science and technology. 1992, Vol 7, Num 6, pp 787-792, issn 0268-1242Article

Exchange enhancement of the Landau-level separation for two-dimensional electrons in GaAs/Ga_1-xAl_xAs heterojunctionsHAYNE, M; USHER, A; HARRIS, J. J et al.Physical review. B, Condensed matter. 1992, Vol 46, Num 15, pp 9515-9519, issn 0163-1829Article

Coherence limiting length scale in ultra high mobility GaAs/AlGaAs heterojunction wiresBIRD, J. P; GRASSIE, A. D. C; LAKRIMI, M et al.Surface science. 1992, Vol 267, Num 1-3, pp 277-281, issn 0039-6028Conference Paper

The effect of second subband occupation on the thermopower of a high mobility GaAs-Al_0.33Ga_0.67As heterojunctionFLETCHER, R; HARRIS, J. J; FOXON, C. T et al.Semiconductor science and technology. 1991, Vol 6, Num 1, pp 54-58, issn 0268-1242, 5 p.Article

Quantitative assessment of Be acceptors in GaAs by local vibrational mode spectroscopyWAGNER, J; MAIER, M; MURRAY, R et al.Journal of applied physics. 1991, Vol 69, Num 2, pp 971-974, issn 0021-8979, 4 p.Article

The low-temperature analysis of narrow GaAs/AlGaAs heterojunction wiresBIRD, J. P; GRASSIE, A. D. C; LAKRIMI, M et al.Journal of physics. Condensed matter (Print). 1991, Vol 3, Num 17, pp 2897-2906, issn 0953-8984, 10 p.Article

Electron crystallization in two dimensionsGLATTLI, D. C; ANDREI, E. Y; WILLIAMS, F. I. B et al.Physica. B, Condensed matter. 1991, Vol 169, Num 1-4, pp 328-335, issn 0921-4526, 8 p.Conference Paper

Edge magnetoplasmons in the fractional-quantum-hall-effect regimeWASSERMEIER, M; OSHINOWO, J; KOTTHAUS, J. P et al.Physical review. B, Condensed matter. 1990, Vol 41, Num 14, pp 10287-10290, issn 0163-1829, 4 p.Article

Inter-subband scattering rates in GaAs-GaAlAs heterojunctionsLEADLEY, D. R; NICHOLAS, R. J; HARRIS, J. J et al.Semiconductor science and technology. 1990, Vol 5, Num 11, pp 1081-1087, issn 0268-1242, 7 p.Article

Optimisation of (Al,Ga)As/GaAS two-dimensional electron gas structures for low carrier densities and ultrahigh mobilities at low temperaturesFOXON, C. T; HARRIS, J. J; HILTON, D et al.Semiconductor science and technology. 1989, Vol 4, Num 7, pp 582-585, issn 0268-1242Article

The calibration of the strength of the localized vibrational modes of silicon impurities in epitaxial GaAs revealed by infrared absorption and Raman scatteringMURRAY, R; NEWMAN, R. C; SANGSTER, M. J. L et al.Journal of applied physics. 1989, Vol 66, Num 6, pp 2589-2596, issn 0021-8979Article

Influence of acoustic phonons on inter-subband scattering in GaAs-GaAlAs heterojunctionsLEADLEY, D. R; NICHOLAS, R. J; HARRIS, J. J et al.Semiconductor science and technology. 1989, Vol 4, Num 10, pp 885-888, issn 0268-1242, 4 p.Article

Magnetoresistance effect in AlGaAs/GaAs two-dimensional electron gas structures at room temperatureBATTERSBY, S. J; SELTEN, F. M; HARRIS, J. J et al.Solid-state electronics. 1988, Vol 31, Num 6, pp 1083-1088, issn 0038-1101Article

In situ grown Schottky gates on GaAs/AlGaAs heterojunctionsTIMMERING, C. E; LAGEMAAT, J. M; FOXON, C. T et al.Semiconductor science and technology. 1988, Vol 3, Num 11, pp 1139-1142, issn 0268-1242Article