Growth mechanisms in thin film epitaxy of Si/SiGe from hydridesZHANG, J; WOODS, N. J; BRETON, G et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 399-405, issn 0921-5107Conference Paper

The development of RAS and RHEED as in situ probes to monitor dopant segregation in GS-MBE on Si (001)HARTELL, A. D; TOK, E. S; ZHANG, J et al.Journal of crystal growth. 2001, Vol 227-28, pp 729-734, issn 0022-0248Conference Paper