EVALUATION OF THE DISPERSION RELATION OF THE MISAWA AVALANCHE DIODEHARTH W.1983; AEUE. ARCHIV FUER ELEKTRONIK UND UEBERTRAGUNGSTECHNIK; ISSN 0001-1096; DEU; DA. 1983; VOL. 37; NO 3-4; PP. 135-136; ABS. GER; BIBL. 8 REF.Article

EFFECT OF DIFFUSION ON THE LONGITUDINAL MODE SPECTRUM OF GAAS INJECTION LASERSHARTH W.1978; ARCH. ELEKTRON. UEBERTRAG.-TECH.; DEU; DA. 1978; VOL. 32; NO 7; PP. 295-297; ABS. GER; BIBL. 12 REF.Article

PROPERTIES OF INJECTION LASERS AT LARGE-SIGNAL MODULATION.HARTH W.1975; ARCH. ELEKTRON. UEBERTRAG.-TECH.; DTSCH.; DA. 1975; VOL. 29; NO 4; PP. 149-152; ABS. ALLEM.; BIBL. 5 REF.Article

VLF. ATMOSPHERICS. IHRE MESSUNG UND IHRE INTERPRETATION = ATMOSPHERIQUES TBF: LEURS MESURES ET INTERPRETATIONHARTH W.1972; Z. GEOPHYS.; DTSCH.; DA. 1972; VOL. 38; NO 5; PP. 815-849; BIBL. 4 P.Serial Issue

POWER OUTPUT AND RISE TIME OF LIGHT EMITTING DIODES.HARTH W.1976; ARCH. ELEKTRON. UEBERTRAG.-TECH.; DTSCH.; DA. 1976; VOL. 30; NO 2; PP. 99-100; ABS. ALLEM.; BIBL. 5 REF.Article

LARGE-SIGNAL OPERATION OF PIN IMPATT DIODES FOR PULSED OSCILLATORS AT MILLIMETRE-WAVE FREQUENCIESCLAASSEN M; HARTH W.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 17; PP. 737-739; BIBL. 7 REF.Article

EFFICIENT MICROWAVE P+-N-P+ BARITT DIODES.FREYER J; HARTH W.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 7; PP. 140-141; BIBL. 6 REF.Article

HIGH-SPEED N-ALGAAS-P-GAAS ELECTROLUMINESCENT DIODES.HEINEN J; HARTH W.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 21; PP. 512-513; BIBL. 7 REF.Article

SUBHARMONIC RESONANCE IN THE DIRECT MODULATION OF INJECTION LASERS. = RESONANCE SUBHARMONIQUE DANS LA MODULATION DIRECTE DE LASERS A INJECTIONHARTH W; SIEMSEN D.1974; ARCH. ELEKTRON. UEBERTRAG.-TECH.; DTSCH.; DA. 1974; VOL. 28; NO 9; PP. 391-392; ABS. ALLEM.; BIBL. 3 REF.Article

INTRINSIC FM NOISE OF GUNN OSCILLATORSATAMAN A; HARTH W.1973; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 1; PP. 12-14; BIBL. 14 REF.Serial Issue

ELASTANCE AND SERIES-RESISTANCE OF VARACTOR-DIODES UNDER LARGE-SIGNAL CONDITIONS = ELASTANCE ET RESISTANCE SERIE DE DIODES VARACTOR EN REGIME DE SIGNAUX FORTSSTEGMULLER B; HARTH W.1982; AEUE, ARCH. ELEKTRON. UEBERTRAGUNGSTECH.; ISSN 0001-1096; DEU; DA. 1982; VOL. 36; NO 4; PP. 173-176; ABS. GER; BIBL. 6 REF.Article

DIFFUSION NOISE IN PNP-BARITT-DIODES.HARTH W; SCHIRM L.1974; ARCH. ELEKTRON. UEBERTRAG.-TECH.; DTSCH.; DA. 1974; VOL. 28; NO 10; PP. 439-441; BIBL. 10 REF.Article

NEUES BAUVERFAHREN FUER BREMSZONE IN EINEM FELSSCHUETTDAMM = NOUVEAU PROCEDE DE CONSTRUCTION POUR LA ZONE DE TRANSITION DANS UN BARRAGE EN ENROCHEMENTHOFFMANN HG; HARTH W.1979; WASSERWIRTSCHAFT; DEU; DA. 1979; VOL. 69; NO 12; PP. 387-390; ABS. ENGArticle

THE INFLUENCE OF DIFFUSION AND SPONTANEOUS EMISSION ON THE SPECTRAL OUTPUT OF GAAS INJECTION LASERSHARTH W; GROTHE H.1978; ARCH. ELEKTRON. UBERTRAG.-TECH.; DEU; DA. 1978; VOL. 32; NO 11; PP. 453-455; ABS. GER; BIBL. 8 REF.Article

FREQUENCY RESPONSE OF GAALAS LIGHT-EMITTING DIODES.HARTH W; HEINEN J.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 4; PP. 478-480; BIBL. 6 REF.Article

Small-signal noise measure of GaAs pin-avalanche diodesHARTH, W.AEU. Archiv für Elektronik und Übertragungstechnik. 1992, Vol 46, Num 1, pp 54-57, issn 0001-1096Article

THEORY OF FM NOISE OF SINGLE-MODE INJECTION LASERSSCHIMPE R; HARTH W.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 4; PP. 136-137; BIBL. 10 REF.Article

MODULATION CHARACTERISTICS OF INJECTION LASERS INCLUDING SPONTANEOUS EMISSION. I. THEORY.HARTH W; SIEMSEN D.1976; ARCH. ELEKTRON. UEBERTRAG.-TECH.; DTSCH.; DA. 1976; VOL. 30; NO 9; PP. 343-348; ABS. ALLEM.; BIBL. 13 REF.Article

MICROWAVE BARITT DIODES. I. LARGE-SIGNAL PERFORMANCEHARTH W; CLAASSEN M.1973; NACHR.-TECH. Z.; DTSCH.; DA. 1973; VOL. 26; NO 1; PP. 26-29; ABS. ALLEM.; BIBL. 29 REF.Serial Issue

MICROWAVE BARITT DIODES. II. FABRICATION PROCESSES AND EXPERIMENTAL RESULTSHARTH W; CLAASSEN M.1973; NACHR.-TECH. Z.; DTSCH.; DA. 1973; VOL. 26; NO 2; PP. 87-90; ABS. ALLEM.; BIBL. 29 REF.Serial Issue

DESIGN CONSIDERATIONS FOR GAAS HIGH-LOW IMPATT DIODESCLAASSEN M; KVEPPER P; HARTH W et al.1978; INTERNATION. J. ELECTRON.; GBR; DA. 1978; VOL. 44; NO 2; PP. 145-150; BIBL. 15 REF.Article

FM NOISE MEASUREMENT OF W-BAND IMPATT DIODES WITH A QUASIOPTICAL DIRECT DETECTION SYSTEMHARTH W; LEISTNER D; FREYER J et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 9; PP. 355-356; BIBL. 5 REF.Article

MG-DOPED INGAASP/INP L.E.D.S. FOR HIGHT-BIT RATE OPTICAL-COMMUNICATION SYSTEMSGROTHE H; PROEBSTER W; HARTH W et al.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 22; PP. 702-703; BIBL. 10 REF.Article

EXPERIMENTAL INVESTIGATION OF PARAMETRIC SIDEBAND AMPLIFICATION IN INJECTION LASERS.GROTHE H; HARTH W; RUSSER P et al.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 20; PP. 522-524; BIBL. 4 REF.Article

LIGHT-EMITTING DIODES WITH A MODULATION BANDWIDTH OF MORE THAN 1GHZ.HEINEN J; HUBER W; HARTH W et al.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 21; PP. 553-554; BIBL. 7 REF.Article