INTERMODULATION DISTORTION OF MESFET AMPLIFIERS = LA DISTORSION D'INTERMODULATION D'AMPLIFICATEURS A BARRIERE SCHOTTKYHARTNAGEL HL.1982; AEUE, ARCH. ELEKTRON. UEBERTRAGUNGSTECH.; ISSN 0001-1096; DEU; DA. 1982; VOL. 36; NO 2; PP. 83-85; ABS. GER; BIBL. 2 REF.Article

NEW GALLIUM ARSENIDE OXIDATION TECHNIQUE FOR MICROWAVE INTEGRATED CIRCUITS.HARTNAGEL HL.1978; MICROELECTRONICS; G.B.; DA. 1978; VOL. 8; NO 4; PP. 5-9; BIBL. 10 REF.Article

THIN FILMS ON GALLIUM ARSENIDE.HARTNAGEL HL.1976; ELECTRON. AND POWER; G.B.; DA. 1976; VOL. 22; NO 11-12; PP. 765-767; BIBL. 5 REF.Article

PLANE-WAVE INTERACTION WITH STRUCTURES OF THIN ABSORBING FILMSHARTNAGEL HL.1980; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; USA; DA. 1980; VOL. 28; NO 6; PP. 667-669; BIBL. 4 REF.Article

BROAD-BAND MESFET GAIN BY A SYNTHESIS DESIGN PROCEDUREHARTNAGEL HL.1979; INTERNATION. J. ELECTRON.; GBR; DA. 1979; VOL. 47; NO 6; PP. 565-567; BIBL. 5 REF.Article

ELECTROLYTIC OXIDATION OF SEMICONDUCTOR SURFACES.HARTNAGEL HL.1977; ELECTROCOMPON. SCI. TECHNOL.; G.B.; DA. 1977; VOL. 3; NO 4; PP. 225-231; BIBL. 13 REF.Article

PULSED-LASER ILLUMINATION OF GAAS MOS STRUCTURES TO STUDY CHARGE TRAPPINGALAM MS; HARTNAGEL HL.1982; INT. J. ELECTRON. THEOR. EXP.; ISSN 0020-7217; GBR; DA. 1982; VOL. 52; NO 1; PP. 61-75; BIBL. 7 REF.Article

ANODIC OXIDES ON GAAS: IV THIN ANODIC OXIDES ON GAASBAYRAKTAROGLU B; HARTNAGEL HL.1979; INTERNATION. J. ELECTRON.; GBR; DA. 1979; VOL. 46; NO 1; PP. 1-11; BIBL. 7 REF.Article

PERFORMANCE OF A NOVEL DIELECTRIC WAVEGUIDE SYSTEM FOR MICROWAVE POWER UTILISATION BY DIVERS.PAVLIDIS D; HARTNAGEL HL.1978; ELECTRON. LETTERS; G.B.; DA. 1978; VOL. 14; NO 8; PP. 262-264; BIBL. 5 REF.Article

ANODIC OXIDES ON GAAS I. ANODIC NATIVE OXIDES ON GAASBAYRAKTAROGLU B; HARTNAGEL HL.1978; INTERNATION. J. ELECTRON.; GBR; DA. 1978; VOL. 45; NO 4; PP. 337-352; BIBL. 22 REF.Article

EXPERIMENTAL RESULTS ON GAAS SURFACE CONDITIONS AFFECTING OHMIC CONTACT PROPERTIES.PARIA H; HARTNAGEL HL.1976; INDIAN J. PHYS.; INDIA; DA. 1976; VOL. 50; NO 4; PP. 488-494; BIBL. 4 REF.Article

THE STRUCTURE OF CLEANED AND POLISHED (100) GAAS SURFACES.WEISS BL; HARTNAGEL HL.1976; INTERNATION. J. ELECTRON.; G.B.; DA. 1976; VOL. 41; NO 2; PP. 185-188; BIBL. 2 REF.Article

NEW GUNN-EFFECT THREE-TERMINAL PLUSE REGENERATOR BY PLANAR PHOTOLITHOGRAPHY.HARIU T; HARTNAGEL HL.1974; INTERNATION. J. ELECTRON.; G.B.; DA. 1974; VOL. 37; NO 4; PP. 451-455; BIBL. 3 REF.Article

NN⁺ JUNCTIONS AND GUNN DOMAINS IN MICROWAVE DEVICESJAIN SC; HARTNAGEL HL.1982; INTERNATIONAL JOURNAL OF ELECTRONICS THEORETICAL & EXPERIMENTAL; ISSN 0020-7217; GBR; DA. 1982; VOL. 52; NO 6; PP. 605-607; BIBL. 6 REF.Article

PROPERTIES OF BN FILMS PRODUCED BY A LOW-TEMPERATURE DOUBLE-PLASMA PROCESSSCHMOLLA W; HARTNAGEL HL.1982; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1982; VOL. 15; NO 8; PP. L95-L98; BIBL. 3 REF.Article

WAVE PROPAGATION STUDIES ON MESFET ELECTRODESREN YA; HARTNAGEL HL.1981; INT. J. ELECTRON. THEOR. EXP.; ISSN 0020-7217; GBR; DA. 1981; VOL. 51; NO 5; PP. 663-668; BIBL. 8 REF.Article

ON THE INTERPRETATION OF ELECTRICAL MEASUREMENTS ON THE GAAS-MOS SYSTEM.KOHN E; HARTNAGEL HL.1978; SOLID-STATE ELECTRON.; G.B.; DA. 1978; VOL. 21; NO 2; PP. 409-416; BIBL. 32 REF.Article

THE INFLUENCE OF DOPANTS ON THE HARDENING OF GAAS.WEISS BL; HARTNAGEL HL.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 8; PP. 3614-3615; BIBL. 11 REF.Article

EFFECT OF EXCESSIVE-TRAPPING OPERATION OF SEQUENTIAL MASS SPECTROMETERS SHOWN FOR COLLISION CROSS-SECTION DATA OF BCL₃.HAFIDH ZA; HARTNAGEL HL.1975; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1975; VOL. 12; NO 5; PP. 1067-1071; BIBL. 11 REF.Article

CRYSTALLIZATION DYNAMICS OF NATIVE ANODIC OXIDES ON GAAS FOR DEVICE APPLICATIONSWEISS BL; HARTNAGEL HL.1979; THIN SOLID FILMS; NLD; DA. 1979; VOL. 56; NO 1-2; PP. 143-152; BIBL. 16 REF.Article

WHITE-LIGHT EMISSION FROM GAAS M.O.S. STRUCTURES.BAYRAKTAROGLU B; HARTNAGEL HL.1978; ELECTRON. LETTERS; GBR; DA. 1978; VOL. 14; NO 15; PP. 470-472; BIBL. 7 REF.Article

COMPLEX DISTRIBUTION EFFECTS OF THIN COMPONENT OHMIC-CONTACT LAYERS ON GAAS.WEISS BL; HARTNAGEL HL.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 12; PP. 263-264; BIBL. 5 REF.Article

IDEAL OHMIC CONTACTS TO INP. = CONTACTS OHMIQUES IDEALS POUR INPMILLS HT; HARTNAGEL HL.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 25-26; PP. 621-622; BIBL. 7 REF.Article

EFFECT OF SURFACE PROPERTIES ON N-TYPE GAAS-NI AND GAAS-AL SCHOTTKY DIODES. = EFFET DES PROPRIETES DE SURFACE SUR DES DIODES SCHOTTKY N-GAAS-NI ET N-GAAS-ALPATWARI AM; HARTNAGEL HL.1974; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1974; VOL. 26; NO 2; PP. 469-475; ABS. ALLEM.; BIBL. 15 REF.Article

ELECTRICAL ANALYSIS METHODS FOR METAL INSULATOR SEMICONDUCTOR STRUCTURES ON GAASSCHUERMEYER FL; HARTNAGEL HL.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 12; PP. 6279-6285; BIBL. 6 REF.Article