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ELECTRON BEAM PROCESSING SYSTEMS. (A STATE OF THE ART REVIEW).HATZAKIS M.1974; POLYM. ENGNG SCI.; U.S.A.; DA. 1974; VOL. 14; NO 7; PP. 516-517; BIBL. 17 REF.; (PHOTOPOLYM.: PRINC., PROCESSES MATER. 3RD PHOTOPOLYM. CONF.; ELLENVILLE, N.Y.: 1973)Conference Paper

RECENT DEVELOPMENTS IN ELECTRON-RESIST EVALUATION TECHNIQUES.HATZAKIS M.1975; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1975; VOL. 12; NO 6; PP. 1276-1279; BIBL. 3 REF.; (SYMP. ELECTRON ION PHOTON BEAM TECHNOL. 13. PROC.; COLORADO SPRINGS; 1975)Conference Paper

ELECTRON SENSITIVE POLYMERS AS HIGH RESOLUTION RESISTSHATZAKIS M.1974; APPL. POLYM. SYMP.; U.S.A.; DA. 1974; NO 23; PP. 73-86; BIBL. 19 REF.; (2ND SYMP. SCANNING ELECTRON MICROSC. POLYM. COATINGS. 165TH NATL. MEET. AM. CHEM. SOC.; DALLAS; 1973)Conference Paper

DEVELOPER TEMPERATURE EFFECTS ON E-BEAM AND OPTICALLY EXPOSED POSITIVE PHOTORESISTSHAW JM; HATZAKIS M.1979; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1979; VOL. 126; NO 11; PP. 2026-2031; BIBL. 8 REF.Article

PERFORMANCE CHARACTERISTICS OF DIAZO- TYPE PHOTORESISTS UNDER E-BEAM AND OPTICAL EXPOSURESHAW JM; HATZAKIS M.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 4; PP. 425-430; BIBL. 7 REF.Article

Organosilicon polymers for lithographic applicationsHATZAKIS, M.Die Makromolekulare Chemie. Macromolecular symposia. 1989, Vol 24, pp 169-175, issn 0258-0322Conference Paper

SINGLE-STEP OPTICAL LIFT-OFF PROCESSHATZAKIS M; CANAVELLO BS; SHAW JM et al.1980; IBM J. RES. DEVELOP.; ISSN 0018-8646; USA; DA. 1980; VOL. 24; NO 4; PP. 452-460; BIBL. 19 REF.Article

15TH SYMPOSIUM ON ELECTRON, ION AND PHOTON BEAM TECHNOLOGYCHANG THP PREF; HATZAKIS M PREF.1979; J. VAC. SCI. TECHNOL.; USA; DA. 1979; VOL. 16; NO 6; PP. 1609-2036; BIBL. DISSEM.Conference Paper

ELECTRON-BEAM LITHOGRAPHY DRAWS A FINER LINE.CHANG THP; HATZAKIS M; WILSON AD et al.1977; ELECTRONICS; U.S.A.; DA. 1977; VOL. 50; NO 10; PP. 89-98Article

ORGANIC CONDUCTORS AS ELECTRON BEAM RESIST MATERIALSTOMKIEWICZ Y; ENGLER EM; KUPTSIS JD et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 1; PP. 90-92; BIBL. 7 REF.Article

COPOLYMERS OF METHYL METHACRYLATE AND METHACRYLIC ACID AND THEIR METAL SALTS AS RADIATION SENSITIVE RESISTSHALLER I; FEDER R; HATZAKIS M et al.1979; J. ELECTROCHEM. SOC.; USA; DA. 1979; VOL. 126; NO 1; PP. 154-161; BIBL. 28 REF.Article

PRINCIPE ET TECHNIQUE DE LA LITHOGRAPHIE PAR BOMBARDEMENT ELECTRONIQUECHANG THP; HATZAKIS M; WILSON AD et al.1977; ELEKTRONIK; DTSCH.; DA. 1977; VOL. 29; NO 8; PP. 51-60; BIBL. 27 REF.Article

Micro- and Nano-Engineering MNE 97 International Conference on Micro- and NanofabricationHATZAKIS, M; GOGOLIDES, E.Microelectronic engineering. 1998, Vol 41-42, issn 0167-9317, 663 p.Conference Proceedings

Silylation of epoxy functionalised photoresists for optical, E - beam lithography and micromachining applicationsTEGOU, E; GOGOLIDES, E; ARGITIS, P et al.Microelectronic engineering. 1998, Vol 41-42, pp 335-338, issn 0167-9317Conference Paper

SCANNING ELECTRON BEAM LITHOGRAPHY FOR FABRICATION OF MAGNETIC BUBBLE CIRCUITS.CHANG THP; HATZAKIS M; WILSON AD et al.1976; I.B.M. J. RES. DEVELOP.; U.S.A.; DA. 1976; VOL. 20; NO 4; PP. 376-388; BIBL. 24 REF.Article

A new approach to aspect ratio independent etchingLUKICHEV, V. F.Microelectronic engineering. 1998, Vol 41-42, pp 423-426, issn 0167-9317Conference Paper

Electron microscopical and holographical investigation of quantum dotsADE, G; LAUER, R.Microelectronic engineering. 1998, Vol 41-42, pp 627-629, issn 0167-9317Conference Paper

Nanoengineering beyond nanoelectronicsROHRER, H.Microelectronic engineering. 1998, Vol 41-42, pp 31-36, issn 0167-9317Conference Paper

Status and future of DUV photoresists for the semiconductor industryTHACKERAY, J. W.Microelectronic engineering. 1998, Vol 41-42, pp 37-40, issn 0167-9317Conference Paper

Status and future of X-ray lithographyHECTOR, S.Microelectronic engineering. 1998, Vol 41-42, pp 25-30, issn 0167-9317Conference Paper

Compaction-limited system lifetime in 193-nm optical lithographySCHENKER, R; OLDHAM, W.Microelectronic engineering. 1998, Vol 41-42, pp 141-144, issn 0167-9317Conference Paper

Generation of large area condenser zone plates with smallest zone width below 40 nm by electron beam lithographySCHLIEBE, T.Microelectronic engineering. 1998, Vol 41-42, pp 465-468, issn 0167-9317Conference Paper

Optical properties of thin/thick film stacks : Application to attenuated phase-shifting masks and photoresist characterizationSCHIAVONE, P; GRANET, G.Microelectronic engineering. 1998, Vol 41-42, pp 129-132, issn 0167-9317Conference Paper

LITHOS : a fast electron beam lithography simulatorGLEZOS, N; RAPTIS, I; HATZAKIS, M et al.Microelectronic engineering. 1995, Vol 26, Num 3-4, pp 131-140, issn 0167-9317Article

Scanning differential interferometer to measure index heterogeneityBOBROFF, N; ROSENBLUTH, A. E; HATZAKIS, M. JR et al.Applied optics. 1992, Vol 31, Num 31, pp 6622-6631, issn 0003-6935Article

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