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THEORY OF TRIANGULAR-BARRIER BULK UNIPOLAR DIODES INCLUDING MINORITY-CARRIER EFFECTSHABIB SED; BOARD K.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 2; PP. 90-96; BIBL. 8 REF.Article

BARRIER HEIGHT OF HF/GAAS DIODE.KAJIYAMA K; SAKATA S; OCHI O et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 7; PP. 3221-3222; BIBL. 7 REF.Article

SUR LA STRUCTURE ENERGETIQUE DE LA LIMITE DE SEPARATION DU CONTACT METAL-GAASSEJRANYAN GB; TKHORIK YU A.1973; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1973; VOL. 7; NO 2; PP. 355-359; BIBL. 22 REF.Serial Issue

TEMPERATURE DEPENDENCE OF THE SCHOTTKY BARRIER HEIGHT IN GALLIUM ARSENIDEHACKAM R; HARROP P.1972; SOLID STATE COMMUNIC.; G.B.; DA. 1972; VOL. 11; NO 5; PP. 669-672; ABS. RUSSE; BIBL. 14 REF.Serial Issue

THE ACCURACY OF SCHOTTKY-BARRIER-HEIGHT MEASUREMENTS ON CLEAN-CLEAVED SILICON.VAN OTTERLOO JD; GERRITSEN LJ.1978; J. APPL. PHYS.; U.S.A.; DA. 1978; VOL. 49; NO 2; PP. 723-729; BIBL. 21 REF.Article

SCHOTTKY-BARRIER DEVICES WITH LOW BARRIER HEIGHT.KAJIYAMA K; SAKATA S; MIZUSHIMA Y et al.1974; PROC. I.E.E.E.; U.S.A.; DA. 1974; VOL. 62; NO 9; PP. 1287-1288; BIBL. 1 REF.Article

DEPENDENCE OF THE BARRIER HEIGHT ON INSULATOR THICKNESS IN AL-(AL-OXIDE)-AL SANDWICHES.KADLEC J; GUNDLACH KH.1975; SOLID STATE COMMUNIC.; G.B.; DA. 1975; VOL. 16; NO 5; PP. 621-623; BIBL. 9 REF.Article

THE NATURE OF BARRIER HEIGHT VARIATIONS IN ALLOYED AL-SI SCHOTTKY BARRIER DIODES.BASTERFIELD J; SHANNON JM; GILL A et al.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 3; PP. 290-291; BIBL. 7 REF.Article

CORRELATION OF THE SCHOTTKY BARRIER HEIGHT MEASUREMENTS DETERMINED FROM THE CAPACITANCE METHOD AND THE SATURATION CURRENTHACKAM R; HARROP P.1972; SOLID-STATE ELECTRON.; G.B.; DA. 1972; VOL. 15; NO 9; PP. 1031-1032; BIBL. 5 REF.Serial Issue

SUR LE ROLE DES FORCES IMAGES DANS LA FORMATION D'UNE BARRIERE DE POTENTIEL AU CONTACT METAL-SEMICONDUCTEURTERESHCHENKO AK.1973; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1973; NO 12; PP. 85-89; BIBL. 13 REF.Serial Issue

OPTIMUM BARRIER HEIGHT FOR SCHOTTKY-BARRIER DETECTORSSHOUSHA AHM.1982; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1982; VOL. 15; NO 4; PP. 669-675; BIBL. 7 REF.Article

MECHANISM FOR INJECTING CONTACT FORMATION AT METAL-CDS OR CDSE INTERFACESFREEMAN EC; SLOWIK JH.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 1; PP. 96-98; BIBL. 26 REF.Article

THE BIAS-DEPENDENT PHOTOELECTRIC BARRIER HEIGHT OF THE SCHOTTKY DIODESCHING YUAN WU.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 4; PP. 2909-2912; BIBL. 5 REF.Article

SCHOTTKY BARRIERS AT THE INTERFACE BETWEEN AMORPHOUS SILICON AND ELECTROLYTESWILLIAMS R.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 4; PP. 2848-2851; BIBL. 13 REF.Article

SCHOTTKY BARRIER HEIGHTS OF NICKEL-PLATINUM SILICIDE CONTACTS ON N-TYPE SI.TERRY LE; SALTICH J.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 4; PP. 229-231; BIBL. 4 REF.Article

COMPUTER TECHNIQUES FOR SOLVING METAL-SEMICONDUCTOR BARRIER HEIGHT APPLICATION TO AU-CDS THIN FILM SCHOTTKY DIODES.NGUYEN PH; LEPLEY B; NADEAU A et al.1975; PROC. INSTIT. ELECTR. ENGRS; G.B.; DA. 1975; VOL. 122; NO 11; PP. 1193-1196; BIBL. 10 REF.Article

EFFET DE L'ORIENTATION CRISTALLINE SUR LA HAUTEUR DE BARRIERE D'UNE JONCTION METAL-SEMICONDUCTEURBARRET C; VAPAILLE A.1973; C.R. ACAD. SCI., A; FR.; DA. 1973; VOL. 276; NO 7; PP. 271-274; BIBL. 9 REF.Serial Issue

HAUTEURS DE BARRIERE AUX INTERFACES ZN-SE ET BE-SEMULLER LP; MIHAI IC.1973; STUD. CERC. FIZ.; ROMAN.; DA. 1973; VOL. 25; NO 16; PP. 655-661; ABS. ANGL.; BIBL. 8 REF.Serial Issue

ON THE PINHOLE MODEL FOR MIS DIODESFONASH SJ; ASHOK S.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 11; PP. 1075-1076; BIBL. 19 REF.Article

CONTROL OF SCHOTTKY BARRIER HEIGHT USING HIGHLY DOPED SURFACE LAYERS.SHANNON JM.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 6; PP. 537-543; BIBL. 16 REF.Article

ARE INTERFACE STATES CONSISTENT WITH SCHOTTKY BARRIER MEASUREMENTS.FREEOUF JL.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 3; PP. 285-287; BIBL. 15 REF.Article

NEW FERMI ENERGY PINNING BEHAVIOR OF AU ON GAAS (110) SUGGESTING INCREASED SCHOTTKY-BARRIER HEIGHTS ON N-TYPE GAASSKEATH P; SU CY; HINO I et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 4; PP. 349-351; BIBL. 15 REF.Article

BARRIER HEIGHTS AT THE POLYCRYSTALLINE SILICON-SIO2 INTERFACEHICKMOTT TW; ISAAC RD.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 5; PP. 3464-3475; BIBL. 37 REF.Article

SCHOTTKY BARRIERS ON COMPOUND SEMICONDUCTORS: THE ROLE OF THE ANION.MCCALDIN JO; MCGILL TC; MEAD CA et al.1976; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1976; VOL. 13; NO 4; PP. 802-806; BIBL. 18 REF.; (PHYS. COMPD. SEMICOND. INTERFACES. ANNU. CONF. 3. PROC.; SAN DIEGO, CALIF.; 1976)Conference Paper

PHOTOVOLTAIC PROPERTIES AND BARRIER HEIGHTS OF SINGLE-CRYSTAL AND POLYCRYSTALLINE CU2O-CU CONTACTSASSIMOS JA; TRIVICH D.1973; J. APPL. PHYS.; U.S.A.; DA. 1973; VOL. 44; NO 4; PP. 1687-1693; BIBL. 32 REF.Serial Issue

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