BOUNDARY CONDITIONS AT P-N JUNCTIONSHEASELL EL.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 10; PP. 853-856; BIBL. 16 REF.Article

A CONSTANT-CURRENT CHARGING TECHNIQUE FOR THE MEASUREMENT OF GENERATION RATES IN MOS-CAPACITORSHEASELL EL.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 3; PP. 199-209; BIBL. 26 REF.Article

THE INFLUENCE OF ILLUMINATION ON THE MAJORITY-CARRIER QUASI-FERMI-LEVEL IN THE SCHOTTKY-BARRIER DIODEHEASELL EL.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 10; PP. 889-895; BIBL. 11 REF.Article

THE EMITTER EFFICIENCY OF SILICON BIPOLAR TRANSISTORS - AN UNPERTURBED BAND MODELHEASELL EL.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 6; PP. 919-923; BIBL. 34 REF.Article

RECOMBINATION BENEATH OHMIC CONTACTS AND ADJACENT OXIDE COVERED REGIONSHEASELL EL.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 1; PP. 89-93; BIBL. 22 REF.Article

THE HEAT-FLOW PROBLEM IN SILICON: AN APPROACH TO AN ANALYTICAL SOLUTION WITH-APPLICATION TO THE CALCULATION OF THERMAL INSTABILITY IN BIPOLAR DEVICESHEASELL EL.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 12; PP. 1382-1388; BIBL. 30 REF.Article

CHARGE INJECTION FROM A SURFACE DEPLETION REGION-THE AL₂O₃-SILICON SYSTEMKOLK J; HEASELL EL.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 3; PP. 223-228; BIBL. 16 REF.Article

DEFECT CENTERS IN SILICON PRODUCED BY ROOM TEMPERATURE ELECTRON IRRADIATION. II. THERMALLY STIMULATED CONDUCTIVITY STUDIES.NATARAJAN K; HEASELL EL.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 29; NO 1; PP. 207-212; ABS. FR.; BIBL. 16 REF.Article

CADMIUM DIFFUSED INSB TUNNEL JUNCTIONSFISCHER CW; HEASELL EL.1972; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1972; VOL. 11; NO 2; PP. 483-493; BIBL. 25 REF.Serial Issue

THERMAL OXIDE LAYERS ON INDIUM ANTIMONIDE.KORWIN PAWLOWSKI M; HEASELL EL.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 27; NO 2; PP. 339-346; ABS. FR.; BIBL. 20 REF.Article

AN EXPERIMENTAL TECHNIQUES FOR THE STUDY OF NON-AVALANCHE CHARGE INJECTION OR TRAPPING IN MIS STRUCTURESKOLK J; HEASELL EL.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 3; PP. 229-235; BIBL. 5 REF.Article

MODELLING OF CHANNEL ENHANCEMENT EFFECTS ON THE WRITE CHARACTERISTICS OF FAMOS DEVICES.CARD HC; HEASELL EL.1976; SOLID STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 11; PP. 965-968; BIBL. 7 REF.Article

DEFECT CENTERS IN SILICON PRODUCED BY ROOM TEMPERATURE ELECTRON IRRADIATION. III. HALL COEFFICIENT STUDIES.ANTARAJAN K; HEASELL EL.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 29; NO 2; PP. 415-420; ABS. FR.; BIBL. 14 REF.Article

THE PROPERTIES OF SOME METAL-INSB SURFACE BARRIER DIODES.KORWIN PAWLOWSKI ML; HEASELL EL.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 10; PP. 849-852; BIBL. 8 REF.Article

INTEGRATED INJECTION LOGIC FOR VLSIROFAIL SS; ELMASRY MI; HEASELL EL et al.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 7; PP. 1301-1303; BIBL. 8 REF.Article

FUNCTIONAL MODELING OF INTEGRATED INJECTION LOGIC. TRANSIENT ANALYSISROFAIL SS; ELMASRY MI; HEASELL EL et al.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 9; PP. 1120-1125; BIBL. 11 REF.Article