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THE CONCEPT OF SCREENING LENGTH IN LIFETIME AND RELAXATION SEMICONDUCTORSMANIFACIER JC; HENISCH HK.1980; J. PHYS. CHEM. SOLIDS; ISSN 0022-3697; USA; DA. 1980; VOL. 41; NO 11; PP. 1285-1288; BIBL. 12 REF.Article

MINORITY CARRIER EXCLUSIONMANIFACIER JC; HENISCH HK.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 3; PP. 279-281; BIBL. 6 REF.Article

MINORITY-CARRIER INJECTION INTO SEMI-INSULATORS.POPESCU C; HENISCH HK.1976; PHYS. REV., B; U.S.A.; DA. 1976; VOL. 14; NO 2; PP. 517-525; BIBL. 7 REF.Article

MINORITY CARRIER INJECTION IN RELAXATION SEMICONDUCTORS.POPESCU C; HENISCH HK.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 11; NO 4; PP. 1563-1568; BIBL. 5 REF.Article

PRE-THRESHOLD CONDUCTANCE AND POLARIZATION EFFECTS IN AMORPHOUS SEMICONDUCTOR SWITCHESBURGESS WD; HENISCH HK.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 1; PP. 15-18; H.T. 1; BIBL. 10 REF.Serial Issue

THE INTERPRETATION OF OHMIC BEHAVIOR IN SEMI-INSULATING GALLIUM ARSENIDE SYSTEMSMANIFACIER JC; HENISCH HK.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 8; PP. 5195-5201; BIBL. 16 REF.Article

MINORITY-CARRIER INJECTION INTO SEMICONDUCTORS CONTAINING TRAPS.MANIFACIER JC; HENISCH HK.1978; PHYS. REV., B; U.S.A.; DA. 1978; VOL. 17; NO 6; PP. 2648-2654; BIBL. 17 REF.Article

MINORITY-CARRIER INJECTION INTO SEMICONDUCTORS.MANIFACIER JC; HENISCH HK.1978; PHYS. REV., B; U.S.A.; DA. 1978; VOL. 17; NO 6; PP. 2640-2647; BIBL. 20 REF.Article

THRESHOLD SWITCHING IN CHALCOGENIDE GLASS FILMSLEE SH; HENISCH HK.1973; APPL. PHYS. LETTERS; U.S.A.; DA. 1973; VOL. 22; NO 5; PP. 230-231; BIBL. 16 REF.Serial Issue

BARRIERS ON N- AND P-TYPE GERMANIUMRAHIMI S; HENISCH HK.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 11; PP. 896-897; BIBL. 5 REF.Article

MINORITY CARRIER INJECTION IN RELAXATION SEMICONDUCTORS UNDER ILLUMINATION.POPESCU C; HENISCH HK.1976; J. PHYS. CHEM. SOLIDS; G.B.; DA. 1976; VOL. 37; NO 1; PP. 47-49; BIBL. 3 REF.Article

THRESHOLD SWITCHING CHARACTERISTICS.ESQUEDA P; HENISCH HK.1976; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1976; VOL. 22; NO 1; PP. 97-108; BIBL. 17 REF.Article

SWITCHING IN ORGANIC POLYMER FILMSHENISCH HK SMITH WR.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 24; NO 12; PP. 589-591; BIBL. 17 REF.Article

THERMAL AND NON-THERMAL PROCESSES IN THRESHOLD SWITCHINGLEE SH; HENISCH HK.1972; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1972; VOL. 11; NO 3; PP. 192-198; BIBL. 27 REF.Serial Issue

DRIFT-DIFFUSION THEORY OF SYMMETRICAL DOUBLE-JUNCTION DIODESSCHMIDT PE; HENISCH HK.1982; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 11; PP. 1129-1133; BIBL. 14 REF.Article

STUDY OF TRAPPING IN AMORPHOUS MATERIALS.BOTILA T; HENISCH HK.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 38; NO 1; PP. 331-337; ABS. ALLEM.; BIBL. 23 REF.Article

CONTACTS WITH SEMI-INSULATORS.HENISCH HK; POPESCU C.1975; NATURE; G.B.; DA. 1975; VOL. 257; NO 5525; PP. 363-367; BIBL. 11 REF.Article

SWITCHING IN ORGANIC POLYMER FILMS.HENISCH HK; SMITH WR.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 24; NO 12; PP. 589-591; BIBL. 17 REF.Article

RELAXATION PROCESSES IN THE CHALCOGENIDE GLASS THRESHOLD SWITCHESLEE SH; HENISCH HK.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 2; PP. 155-160; H.T. 1; BIBL. 17 REF.Serial Issue

ON THE GELLING OF SODIUM METASILICATE SOLUTIONSHENISCH HK; NEURGOANKAR RR.1972; KOLLOID-Z. Z. POLYM.; DTSCH.; DA. 1972; VOL. 250; NO 6; PP. 617-619; BIBL. 6 REF.Serial Issue

BEHAVIOR OF AMORPHOUS SEMICONDUCTOR FILMS BETWEEN ASYMETRIC ELECTRODESVENDURA GJ JR; HENISCH HK.1972; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1972; VOL. 11; NO 2; PP. 105-112; BIBL. 14 REF.Serial Issue

ON THE WIDTH OF SCHOTTKY BARRIERSMOREAU Y; MANIFACIER JC; HENISCH HK et al.1982; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 2; PP. 137-139; BIBL. 3 REF.Article

ON THE DEMBER-EFFECT AND A NEW TRAP-CONTROLLED PHOTOPOLARIZATIONMOREAU Y; MANIFACIER JC; HENISCH HK et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 9; PP. 883-885; BIBL. 8 REF.Article

ASPECTS OF THRESHOLD SWITCHING.SMITH W; SHAW RF; HENISCH HK et al.1974; ELECTROCOMPON. SCI. TECHNOL.; G.B.; DA. 1974; VOL. 1; NO 2; PP. 137-139; BIBL. 12 REF.Article

MINORITY CARRIER INJECTION AND EXTRACTION IN NEUTRON BOMBARDED GERMANIUMRIEDER G; MANIFACIER JC; HENISCH HK et al.1982; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 2; PP. 133-136; BIBL. 14 REF.Article

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