EFFECT OF CHLORINE ON THE NEGATIVE BIAS INSTABILITY IN MOS STRUCTURES.HESS DW.1977; J. ELECTRO CHEM. SOC.; U.S.A.; DA. 1977; VOL. 124; NO 5; PP. 740-743; BIBL. 17 REF.Article

EFFECTS OF ION IMPLANTATION ON CHARGES IN THE SILICON-SILICON DIOXIDE SYSTEM.LEARN AJ; HESS DW.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 1; PP. 308-312; BIBL. 26 REF.Article

EFFECT OF NITROGEN AND OXYGEN/NITROGEN MIXTURES ON OXIDE CHARGES IN MOS STRUCTURES.HESS DW; DEAL BE.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 8; PP. 1123-1127; BIBL. 14 REF.Article

CORRELATION OF CHEMICAL AND ELECTRICAL PROPERTIES OF PLASMA-DEPOSITED TETRAMETHYLSILANE FILMSSZETO R; HESS DW.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 2; PP. 903-908; BIBL. 28 REF.Article

SPIN-ECHO ENVELOPE MODULATION STUDY OF LAF₃:ND³⁺HESS DW; ROWAN LG.1979; PHYS. REV., B; USA; DA. 1979; VOL. 19; NO 1; PP. 1-8; BIBL. 43 REF.Article

KINETICS OF THE THERMAL OXIDATION OF SILICON IN O₂/HCL MIXTURES.HESS DW; DEAL BE.1977; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1977; VOL. 124; NO 5; PP. 735-739; BIBL. 19 REF.Article

CONDUCTION MECHANISM IN PLASMA-POLYMERIZED TETRAMETHYLSILANE FILMSSZETO R; HESS DW.1981; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1981; VOL. 78; NO 2; PP. 125-132; BIBL. 21 REF.Article

INVESTIGATION OF SILICON ETCHING AND SILICON DIOXIDE BUBBLE FORMATION DURING SILICON OXIDATION IN HCL-OXYGEN ATMOSPHERES.HESS DW; MCDONALD RC.1977; THIN SOLID FILMS; NETHERL.; DA. 1977; VOL. 42; NO 1; PP. 127-131; BIBL. 14 REF.Article

MOS ELECTRODE SIZE EFFECTS.LEARN AJ; HESS DW.1976; THIN SOLID FILMS; NETHERL.; DA. 1976; VOL. 37; NO 1; PP. L11-L14; BIBL. 6 REF.Article

CONTROL OF FIXED CHARGE AT SI-SIO₂ INTERFACE BY OXIDATION-REDUCTION TREATMENTSFOWKES FM; HESS DW.1973; APPL. PHYS. LETTERS; U.S.A.; DA. 1973; VOL. 22; NO 8; PP. 377-379; BIBL. 18 REF.Serial Issue

CHEMICAL PROPERTIES OF POLYMER FILMS FORMED DURING THE ETCHING OF ALUMINUM IN CCL₄ PLASMASNAGY AG; HESS DW.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 11; PP. 2530-2533; BIBL. 13 REF.Article

PHASE SEPARATION IN PLASMA-DEPOSITED POLYSILOXANE FILMSSZETO R; HESS DW.1981; J. POLYM. SCI., POLYM. LETT. ED.; ISSN 0360-6384; USA; DA. 1981; VOL. 19; NO 3; PP. 119-123; BIBL. 10 REF.Article

EFFECTS OF OXIDATION AND NITROGEN ANNEALING ON ION-IMPLANTATION-INDUCED INTERFACE STATES IN THE SILICON-SILICON DIOXIDE SYSTEM.HESS DW; LEARN AJ.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 2; PP. 834-836; BIBL. 11 REF.Article

PLASMA-ENHANCED DEPOSITION OF TUNGSTEN, MOLYBDENUM, AND TUNGSTEN SILICIDE FILMS = DEPOT AUGMENTE PAR PLASMA DE COUCHES MINCES DE TUNGSTENE, MOLYBDENE ET SILICIURE DE TUNGSTENETANG CC; CHU JK; HESS DW et al.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 3; PP. 125-128; BIBL. 26 REF.Article

PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION OF TUNGSTEN FILMS = DEPOT CHIMIQUE EN PHASE VAPEUR AUGMENTE PAR PLASMA DE COUCHES MINCES DE TUNGSTENECHU JK; TANG CC; HESS DW et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 1; PP. 75-77; BIBL. 11 REF.Article

CONSTRUCT VALIDITY OF THE ILLINOIS TEST OF PSYCHOLINGUISTIC ABILITIES FOR A CLINIC POPULATIONPIROZZOLO FJ; OBRZUT JE; HESS DW et al.1983; PSYCHOLOGY IN THE SCHOOLS; ISSN 0033-3085; USA; DA. 1983; VOL. 20; NO 2; PP. 146-152; BIBL. 18 REF.Article

RAMAN STUDIES OF ROTATIONAL AND VIBRATIONAL RELAXATION IN LIQUID FLUOROFORM.DEZWAAN J; HESS DW; JOHNSON CS JR et al.1975; J. CHEM. PHYS.; U.S.A.; DA. 1975; VOL. 63; NO 1; PP. 422-426; BIBL. 33 REF.Article

LEARNING-DISORDERED CHILDREN'S EVOKED POTENTIALS DURING SUSTAINED ATTENTIONDAINER KB; KLORMAN R; SALZMAN LF et al.1981; J. ABNORM. CHILD PSYCHOL.; ISSN 0091-0627; USA; DA. 1981; VOL. 9; NO 1; PP. 79-94; BIBL. 2 P.Article