ASPECTS OF HIGH-FIELD TRANSPORT IN SEMICONDUCTOR HETEROLAYERS AND SEMICONDUCTOR DEVICESHESS K.1982; ADV. ELECTRON PHYS.; ISSN 0065-2539; FRA; DA. 1982; VOL. 59; PP. 239-291; BIBL. 2 P.Article

TRANSPORTEIGENSCHAFTEN VON FELDEFFEKT-TRANSISTOREN. = PROPRIETES DE TRANSPORT DE TRANSISTORS A EFFET DE CHAMPHESS K.1977; ACTA PHYS. AUSTR.; AUTR.; DA. 1977; VOL. 47; NO 1-2; PP. 31-57; ABS. ANGL.; BIBL. 1 P.Article

ENERGY RELAXATION TO ACOUSTIC PHONONS IN SURFACE INVERSION LAYERS.HESS K.1978; SOLID STATE COMMUNIC.; G.B.; DA. 1978; VOL. 25; NO 3; PP. 191-192; BIBL. 8 REF.Article

HOT-ELECTRON MAGNETORESISTANCE IN N-SILICON INVERSION LAYERS.HESS K.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 31; NO 2; PP. 483-487; ABS. ALLEM.; BIBL. 12 REF.Article

ANISOTROPIC IN PURITY SCATTERING IN ELECTRICALLY QUANTIZED INVERSION LAYERS.HESS K.1975; SOLID STATE COMMUNIC.; G.B.; DA. 1975; VOL. 17; NO 2; PP. 157-159; BIBL. 11 REF.Article

COMMENT ON "EFFECT OF COLLISIONAL BROADENING ON MONTE CARLO SIMULATIONS OF HIGH-FIELD TRANSPORT IN SEMICONDUCTOR DEVICES"HESS K.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 11; PP. 297-298; BIBL. 11 REF.Article

RESONANCE IMPACT IONIZATION IN SUPERLATTICESMON KK; HESS K.1982; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 6; PP. 491-492; BIBL. 6 REF.Article

DEFORMATION POTENTIALS OF BULK SEMICONDUCTORSHESS K; DOW JD.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 40; NO 4; PP. 371-373; BIBL. 11 REF.Article

LAESIONEN IM PLEXUS CERVICALIS-BEREICH BEI TRAUMATISCHEN ARMPLEXUSPARESEN = LESIONS DANS LA REGION DU PLEXUS CERVICAL DANS LES PARALYSIES TRAUMATIQUES DU PLEXUS BRACHIALHESS K; FREY R.1981; NERVENARZT; ISSN 0028-2804; DEU; DA. 1981; VOL. 52; NO 4; PP. 228-231; BIBL. 16 REF.Article

THE ULTIMATE LIMITS OF CCD PERFORMANCE IMPOSED BY HOT ELECTRON EFFECTSHESS K; SAH CT.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 12; PP. 1025-1033; BIBL. 28 REF.Article

PHOSGEN-VERNICHTUNG DURCH THERMISCHE UMSETZUNG = DESTRUCTION DU PHOSGENE PAR DECOMPOSITION THERMIQUEHESS K; KOTKAMP R.1973; CHEM.-INGR-TECH.; DTSCH.; DA. 1973; VOL. 45; NO 13; PP. 873-881; BIBL. 4 REF.Serial Issue

SCHWINDEL - DIFFENTIALDIAGNOSE UND THERAPIE = VERTIGES: DIAGNOSTIC DIFFERENTIEL ET TRAITEMENTJERUSALEM F; HESS K.1979; PRAXIS; CHE; DA. 1979; VOL. 68; NO 15; PP. 475-483; ABS. ENG; BIBL. 7 REF.Article

A CARRIER TEMPERATURE MODEL SIMULATION OF A DOUBLE-DRIFT IMPATT DIODEKAFKA HJ; HESS K.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 7; PP. 831-834; BIBL. 9 REF.Article

HIGH FREQUENCY HOT ELECTRON CONDUCTIVITY AND ADMITTANCE IN SI AND GE.HESS K; SAH CT.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 7-8; PP. 667-669; BIBL. 7 REF.Article

WARM AND HOT CARRIERS IN SILICON SURFACE-INVERSION LAYERS.HESS K; SAH CT.1974; PHYS. REV., B; U.S.A.; DA. 1974; VOL. 10; NO 8; PP. 3375-3386; BIBL. 25 REF.Article

HOT ELECTRONS IN LAYERED SEMICONDUCTORSHESS K; HOLONYAK N JR.1980; PHYS. TODAY; ISSN 0031-9228; USA; DA. 1980; VOL. 33; NO 10; PP. 40-47; 6 P.; BIBL. 17 REF.Article

FAST SWITCHING AND STORAGE IN GAAS-AL_XGA_1-XAS HETEROJUNCTION LAYERSKEEVER M; HESS K; LUDOWISE M et al.1982; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 10; PP. 297-300; BIBL. 11 REF.Article

HOT ELECTRON DIFFUSION IN FINE LINE SEMICONDUCTOR DEVICESJONES WT; HESS K; IAFRATE BJ et al.1982; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 10; PP. 1017-1021; BIBL. 20 REF.Article

RANDOM SUPERSTRUCTURESDOW JD; SHANG YUAN REN; HESS K et al.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 25; NO 10; PP. 6218-6224; BIBL. 17 REF.Article

ASTIGMATIC PENCILS OF RAYS RECONSTRUCTED FROM HOLOGRAMSDANDLIKER R; HESS K; SIDLER TH et al.1980; ISR. J. TECHNOL.; ISSN 0021-2202; ISR; DA. 1980 PUBL. 1981; VOL. 18; NO 5; PP. 240-246; BIBL. 7 REF.Conference Paper

LIQUID PHASE EPITAXY OF INP.HESS K; STATH N; BENZ KW et al.1974; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1974; VOL. 121; NO 9; PP. 1208-1212; BIBL. 30 REF.Article

SIMULATION OF HIGH-FIELD TRANSPORT IN GAAS USING A MONTE CARLO METHOD AND PSEUDOPOTENTIAL BAND STRUCTURESSHICHIJO H; HESS K; STILLMAN GE et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 2; PP. 89-91; BIBL. 21 REF.Article

REAL-SPACE ELECTRON TRANSFER BY THERMONIC EMISSION IN GAAS-AL_XGA_1-XAS HETEROSTRUCTURES: ANALYTICAL MODEL FOR LARGE LAYER WIDTHSSHICHIJO H; HESS K; STEETMAN BG et al.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 8; PP. 817-822; BIBL. 15 REF.Article

Handlangen und ihre Folgen - Zum Erschleissen von Sachverhalten aus Handlungsabläufen Les actions et leurs conséquences - La déduction des états de choses à partir du déroulement d'actionsHESS, K. D.Sprache und Datenverarbeitung. 1980, Vol 4, Num 1, pp 14-28, issn 0343-5202Article

IONIZED IMPURITY SCATTERING IN SEMICONDUCTORS: INSB DOPED BY NEUTRON IRRADIATION.KUCHAR F; FANTNER E; HESS K et al.1976; J. PHYS. C; G.B.; DA. 1976; VOL. 9; NO 17; PP. 3165-3171; BIBL. 1/2 P.Article