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Results 1 to 25 of 4377

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FIELD ION MICROSCOPE STUDIES OF ATOMIC DISPLACEMENT PROCESSES ON METAL SURFACES.BASSETT DW; CHUNG CK; TICE D et al.1975; VIDE; FR.; DA. 1975; VOL. 30; NO 176; PP. 39-43; ABS. FR.; BIBL. 23 REF.Article

DIFFUSION MECHANISM OF NICKEL AND POINT DEFECTS IN SILICONKITAGAWA H; HASHIMOTO K; YOSHIDA M et al.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 2; PART. 1; PP. 276-280; BIBL. 19 REF.Article

DIFFUSION OF GALLIUM IN QUARTZ AND BULK-FUSED SILICAMIZUTANI S; OHDOMARI I; MIYAZAWA T et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 3; PART. 1; PP. 1470-1473; BIBL. 10 REF.Article

OBSERVATION OF THE ANOMALOUS CONCENTRATION PROFILES OF ANTIMONY ATOMS DIFFUSED INTO SILICON DUE TO LOCAL PRECIPITATIONSUNG HAE SONG; NIIMI T; KOBAYASHI K et al.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 4; PP. 841-846; BIBL. 20 REF.Article

VACANCY-ASSISTED TRACER DIFFUSION: RESPONSE AT SMALL VACANCY CONCENTRATIONTAHIR KHELI RA; ELLIOTT RJ.1982; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1982; VOL. 15; NO 14; PP. L445-L453; BIBL. 20 REF.Article

GENERALIZATION OF THE BOLTZMANN-MATANO METHOD.VAN OPDORP C.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 2; PP. 349; BIBL. 4 REF.Article

HIGH CONCENTRATION ANTIMONY DIFFUSION INTO SILICON USING AUXILIARY WAFERSNANBA M; KOZUKA H; USAMI K et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 3; PP. 235-237; BIBL. 8 REF.Article

PRECISELY CONTROLLED SHALLOW P+ DIFFUSION IN GAASGHANDHI SK; FIELD RJ.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 4; PP. 267-269; BIBL. 8 REF.Article

ANOMALOUS ARSENIC DIFFUSION IN SILICON DIOXIDEWADA Y; ANTONIADIS DA.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 6; PP. 1317-1320; BIBL. 16 REF.Article

DIFFUSION PROFILING USING THE GRADED C(V) METHODSHAPPIR J; KOLODNY A; SHACHAM DIAMAND Y et al.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 5; PP. 993-995; BIBL. 7 REF.Article

ON THE THEORY OF THE DIFFUSION OF GOLD INTO SILICONJEEGER A.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 61; NO 2; PP. 521-529; ABS. GER; BIBL. 9 REF.Article

THEORIE DE LA DISSOLUTION ET DE LA DIFFUSION DE L'HYDROGENE DANS LES METAUXNIKULIN VK; POTEKHINA ND.1980; Z. FIZ. HIM.; ISSN 0044-4537; SUN; DA. 1980; VOL. 54; NO 11; PP. 2751-2756; BIBL. 27 REF.Conference Paper

ADATOM MOBILITY ON THE SURFACE PLANES OF A SIMPLE METALMEADOR AB; TE HUA LIN; HUNTINGTON HB et al.1980; SURF. SCI.; ISSN 0039-6028; NLD; DA. 1980; VOL. 97; NO 1; PP. 53-72; BIBL. 27 REF.Article

ALUMINIUM DIFFUSION INTO SILICON IN AN OPEN TUBE HIGH VACUUM SYSTEM.ROSNOWSKI W.1978; J. ELECTROCHEM. SOC.; USA; DA. 1978; VOL. 125; NO 6; PP. 957-962; BIBL. 19 REF.Article

CRYSTAL-IMPURITY ENERGY TRANSPORT BY MOLECULAR EXCITONS IN THE WAVE-LIKE LIMIT. I. CAPTURE MECHANISM.MARKVART T.1976; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1976; VOL. 73; NO 2; PP. 689-698; ABS. ALLEM.; BIBL. 12 REF.Article

TEMPERATURE DEPENDENCE OF BORON DIFFUSION IN (111), (110) AND (100) SILICON.MASETTI G; SOLMI S; SONCINI G et al.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 6; PP. 545-546; BIBL. 8 REF.Article

XENON DIFFUSION BEHAVIOUR IN PYROLYTIC SIC.FUKUDA K; IWAMOTO K.1976; J. MATER. SCI.; G.B.; DA. 1976; VOL. 11; NO 3; PP. 522-528; BIBL. 36 REF.Article

INTERACTION INDIRECTE D'ATOMES ADSORBES A LA SURFACE D'UN METAL PAR L'INTERMEDIAIRE DU GAZ D'ELECTRONS DU SUPPORTGABOVICH AM; PASHITSKIJ EH A.1976; FIZ. TVERD. TELA; S.S.S.R.; DA. 1976; VOL. 18; NO 2; PP. 377-382; BIBL. 23 REF.Article

LA DIFFUSION INTERGRANULAIRE.MARTIN G; PERRAILLON B.1975; J. PHYS., COLLOQ.; FR.; DA. 1975; VOL. 36; NO 4; PP. C4165-C4190; ABS. ANGL.; BIBL. 2 P. 1/2; (COLLOQ. INT. JOINTS INTERGRANULAIRES METAUX; SAINT-ETIENNE; 1975)Conference Paper

APPLICATION DES DIAGRAMMES DE KOSSEL DE RAYONS X A L'ETUDE DES PROCESSUS DE DIFFUSION DANS LES MONOCRISTAUXIVANOV IG; RYABININA EZ; VO NONG V'ET et al.1975; IZVEST. VYSSH. UCHEBN. ZAVED., FIZ.; S.S.S.R.; DA. 1975; VOL. 18; NO 5; PP. 60-64; BIBL. 7 REF.Article

DIFFUSION DE CU DANS UNE COUCHE MINCE D'OXYDES DE FEFAJNSHTEJN AI; ROJKH IL.1975; DOKL. AKAD. NAUK S.S.S.R.; S.S.S.R.; DA. 1975; VOL. 221; NO 2; PP. 392-394; BIBL. 8 REF.Article

BORON DIFFUSION IN SILICON WITH REMOVAL OF SI-B PHASE.TRONCHEVA LT.1975; BULG. J. PHYS.; BULG.; DA. 1975; VOL. 2; NO 5; PP. 487-492; ABS. BULG.; BIBL. 8 REF.Article

DIRECT MEASUREMENT OF THE ATTEMPT FREQUENCY FOR ION DIFFUSION IN AG AND NA BETA -ALUMINA.ALLEN SJ JR; REMEIKA JP.1974; PHYS. REV. LETTERS; U.S.A.; DA. 1974; VOL. 33; NO 25; PP. 1478-1481; BIBL. 21 REF.Article

STUDY OF TIN DIFFUSION INTO SILICON BY BACKSCATTERING ANALYSIS.AKASAKA Y; HORIE K; NAKAMURA G et al.1974; JAP. J. APPL. PHYS.; JAP.; DA. 1974; VOL. 13; NO 10; PP. 1533-1540; BIBL. 13 REF.Article

DIFFUSION CONTROLEE PAR IMPLANTATION DANS LE GERMANIUM.BRELOT A; BOLBACH G; BENZIDI A et al.1974; VIDE; FR.; DA. 1974; NO 171 SUPPL.; PP. 347; BIBL. 3 REF.; (APPL. PROCESSUS ELECTRON. IONIQUES. IVE. CONGR. INT. AVISEM 74; TOULOUSE; 1974)Conference Paper

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