Scalable synthesis of graphene on single crystal Ir(111) filmsZELLER, Patrick; DÄNHARDT, Sebastian; GSELL, Stefan et al.Surface science. 2012, Vol 606, Num 19-20, pp 1475-1480, issn 0039-6028, 6 p.Article

LATTICE MATCH IN THE HETEROEPITAXY OF III-V COMPOUND ALLOYSMORIIZUMI T; TAKAHASHI K.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 11; PP. 4606-4608; BIBL. 10 REF.Serial Issue

Kinetic Monte Carlo simulations of heteroepitaxial growth with an atomistic model of elasticityPINKU NATH; MADHAV RANGANATHAN.Surface science. 2012, Vol 606, Num 17-18, pp 1450-1457, issn 0039-6028, 8 p.Article

Thermodynamic separability of ultra-thin film surfaces and interfacesFRIESEN, C.Surface science. 2006, Vol 600, Num 5, pp 1012-1016, issn 0039-6028, 5 p.Article

Investigation of the interface manipulation in SiC(100) on Si(100) with isovalent impuritiesPEZOLDT, J; MORALES, F. M; ZGHEIB, Ch et al.Surface and interface analysis. 2006, Vol 38, Num 4, pp 444-447, issn 0142-2421, 4 p.Conference Paper

Effects of substrate shape, curvature and roughness on thin heteroepitaxial films of Pt on Au(111)MATHUR, Anant; ERLEBACHER, Jonah.Surface science. 2008, Vol 602, Num 17, pp 2863-2875, issn 0039-6028, 13 p.Article

Langevin equation for self-organized morphologies of thin heteroepitaxial filmsHASELWANDTER, Christoph A; VVEDENSKY, Dimitri D.Surface science. 2007, Vol 601, Num 13, pp 2762-2764, issn 0039-6028, 3 p.Conference Paper

Quantification of the strain fully relaxed Si/Ge heteroepitaxial films and superlattices via molecular dynamicsSRIVASTAVA, D; TAYLOR, R. S; GARRISON, B. J et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1991, Vol 9, Num 3, pp 1517-1523, issn 0734-211XArticle

In situ monitoring of step arrays on vicinal silicon (100) surfaces for heteroepitaxyCROOK, G. E; DÄWERITZ, L; PLOOG, K et al.Physical review. B, Condensed matter. 1990, Vol 42, Num 8, pp 5126-5134, issn 0163-1829Article

CROSS-SECTIONAL ELECTRON MICROSCOPY OF SILICON ON SAPPHIRE.ABRAHAMS MS; BUIOCCHI CJ.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 6; PP. 325-327; BIBL. 16 REF.Article

LIMITES D'ABSORPTION FONDAMENTALE FLOUES COMME CARACTERISTIQUE DE LA STRUCTURE DES COUCHESMATVEEVA LA; TKHORIK YU A.1974; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1974; NO 16; PP. 39-41; BIBL. 10 REF.Article

A SURVEY OF THE HETEROEPITAXIAL GROWTH OF SEMICONDUCTOR FILMS ON INSULATING SUBSTRATES.MANASEVIT HM.1974; J. CRYST. GROWTH; NETHERL.; DA. 1974; VOL. 22; NO 2; PP. 125-148; BIBL. 3 P. 1/2Article

Study of the CVD process sequences for an improved control of the Bias Enhanced Nucleation step on siliconSAADA, S; ARNAULT, J. C; TRANCHANT, N et al.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 9, pp 2854-2859, issn 1862-6300, 6 p.Conference Paper

Novel exchange mechanisms in the surface diffusion of oxidesHARRIS, Duncan J; LAVRENTIEV, Mikhail Yu; HARDING, John H et al.Journal of physics. Condensed matter (Print). 2004, Vol 16, Num 13, pp L187-L192, issn 0953-8984Article

Characterization of elastic strains in semiconductor heteroepitaxial layers by HREMROBERTSON, M. D; CORBETT, J. M; WEBB, J. B et al.Progress in surface science. 1995, Vol 50, Num 1-4, pp 377-386, issn 0079-6816Conference Paper

New approach to grow pseudomorphic structures over the critical thicknessLO, Y. H.Applied physics letters. 1991, Vol 59, Num 18, pp 2311-2313, issn 0003-6951Article

Méthode de détermination de la profondeur d'une couche déformée plastiquement dans les systèmes hétéroépitaxiauxMATVEEVA, L. A; SEMENOVA, G. N.Fizika i himiâ obrabotki materialov. 1985, Num 5, pp 111-114, issn 0015-3214Article

EPITAXIAL DEPOSITION OF GAAS IN THE GA(CH₃)₃-ASH₃-H₂ SYSTEM. (II). INVESTIGATIONS ON THE HETERO-EPITAXY OF GAAS ON GE.GOTTSCHALCH V; PETZKE WH; BUTTER E et al.1974; KRISTALL U. TECH.; DTSCH.; DA. 1974; VOL. 9; NO 4; PP. 355-363; ABS. ALLEM.; BIBL. 8 REF.Article

HETEROEPITAXIAL INAS GROWN ON GAAS FROM TRIETHYLINDIUM AND ARSINE. I. GROWTH CHARACTERIZATION.JAYANT BALIGA B; GHANDHI SK.1974; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1974; VOL. 121; NO 12; PP. 1642-1646; BIBL. 8 REF.Article

AN INVESTIGATION OF EPITAXIAL FILMS BY MEANS OF REFLECTION HIGH ENERGY ELECTRON DIFFRACTION. I. OBTAINING AND INTERPRETATION OF DIFFRACTION PATTERNSKLIMENKO AP; POLUDIN VI; SVECHNIKOV SV et al.1973; THIN SOLID FILMS; NETHERL.; DA. 1973; VOL. 16; NO 2; PP. 205-214; BIBL. 5 REF.Serial Issue

PREPARATION AND MORPHOLOGY OF GAN-CRYSTALSHOSP W.1972; SIEMENS FORSCH.- U. ENTWICKL.-BER.; DTSCH.; DA. 1972; VOL. 1; NO 3; PP. 312-314; ABS. ALLEM.; BIBL. 7 REF.Serial Issue

Fast kinetic Monte Carlo simulation and statistics of quantum dot arraysPETROV, P. P; MILLER, W.Surface science. 2014, Vol 621, pp 175-183, issn 0039-6028, 9 p.Article

Fabrication of SiGe rings and holes on Si(001) by flash annealingPERSICHETTI, L; CAPASSO, A; SGARLATA, A et al.Applied surface science. 2013, Vol 283, pp 813-819, issn 0169-4332, 7 p.Article

Stranski―Krastanow growth of copper overlayers on the Ni(110) surfaceFUKUDA, T; UMEZAWA, K; NAKAYAMA, H et al.Surface science. 2012, Vol 606, Num 15-16, pp 1221-1226, issn 0039-6028, 6 p.Article

HETERO-EPITAXIE DE ZNSE SUR GAAS PAR TRANSPORT EN TUBE OUVERT.CHEVRIER J; GALIBERT G; ETIENNE D et al.1975; J. CRYST. GROWTH; NETHERL.; DA. 1975; VOL. 28; NO 1; PP. 109-116; ABS. ANGL.; BIBL. 23 REF.Article