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INFLUENCE OF ALXGA1-XAS LAYER THICKNESS ON THRESHOLD CURRENT DENSITY AND DIFFERENTIAL QUANTUM EFFICIENCY FOR GAAS-ALXGA1-XAS DH LASERS.CASEY HC JR; PANISH MB.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 3; PP. 1393-1395; BIBL. 7 REF.Article

DARK LINE LOSS IN DEGRADED DOUBLE-HETEROSTRUCTURE LASERS.KOBAYASHI T; FURUKAWA Y.1975; JAP. J. APPL. PHYS.; JAP.; DA. 1975; VOL. 14; NO 8; PP. 1175-1181; BIBL. 9 REF.Article

A NEW SULFUR DIFFUSED STRIPE-GEOMETRY DH LASER.TAKUSAGAWA M; NISHI H; OSAKA S et al.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 490-493; BIBL. 6 REF.Conference Paper

COSTRUZIONE E CARATTERIZZAZIONE DI DISPOSITIVI LASER A SEMICONDUTTORE A DOPPIA ETEROGIUNZIONE. = CONSTRUCTION ET CARACTERISTIQUES DES DISPOSITIFS LASER A SEMICONDUCTEUR A DOUBLE HETEROJONCTIONDONZELLI G; FLORES C; RANDONE G et al.1976; ALTA FREQ.; ITAL.; DA. 1976; VOL. 45; NO 5; PP. 279-288; BIBL. 16 REF.Article

DISTRIBUTED-FEEDBACK COUPLING IN GA1-X ALXAS DOUBLE-HETEROSTRUCTURE LASERS: EFFECT OF ALUMINIUM CONCENTRATION.BOYD JT; ANDERSON DB.1975; APPL. OPT.; U.S.A.; DA. 1975; VOL. 14; NO 9; PP. 2199-2202; BIBL. 18 REF.Article

LOW-THRESHOLD LPE IN1-X'GAX'P1-Z'/IN1-XGAXP1-ZASZ/IN1-X' GAX'P1-Z'ASZ' YELLOW DOUBLE-HETEROJUNCTION LASER DIODES (J<104 A/CM2, LAMBDA EQUIV. A 5850 A, 77OK).HITCHENS WR; HOLONYAK N JR; WRIGHT PD et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 4; PP. 245-247; BIBL. 14 REF.Article

VERY LOW-THRESHOLD DOUBLE-HETEROJUNCTION ALXGA1-X AS INJECTION LASERS.ETTENBERG M.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 12; PP. 652-654; BIBL. 9 REF.Article

ANALYTICAL APPROXIMATION FOR THE REFLECTIVITY OF DH LASERSBUUS J.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 12; PART. 1; PP. 2256-2257; BIBL. 2 REF.Article

SATURATION OF THE JUNCTION VOLTAGE IN STRIPE-GEOMETRY (ALGA) AS DOUBLE-HETEROSTRUCTURE JUNCTION LASERS.PAOLI TL; BARNES PA.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 12; PP. 714-716; BIBL. 19 REF.Article

GAAS-ALXGA1-XAS INJECTION LASERS WITH DISTRIBUTOR BRAGG REFLECTORS.REIHART FK; LOGAN RA; SHANK CV et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 1; PP. 45-48; BIBL. 16 REF.Article

GROWTH OF DARK LINES FROM CRYSTAL DEFECTS IN GAAS-GAALAS DOUBLE HETEROSTRUCTURE CRYSTALS.ITO R; NAKASHIMA H; NAKADA O et al.1974; JAP. J. APPL. PHYS.; JAP.; DA. 1974; VOL. 13; NO 8; PP. 1321-1322; BIBL. 8 REF.Article

METHOD FOR DETERMINING EFFECTIVE NONRADIATIVE LIFETIME AND LEAKAGE LOSSES IN DOUBLE-HETEROSTRUCTURE LASERSVAN OPDORP C; 'T HOOFT GW.1981; J. APPL. HYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 6; PP. 3827-3839; BIBL. 38 REF.Article

LEAD-TIN TELLURIDE DOUBLE-HETEROJUNCTION LASER DIODES: THEORY AND EXPERIMENT.TOMASETTA LR; FONSTAD CG.1975; I.E.E.E. J. QUANTUM ELECTRON.; U.S.A.; DA. 1975; VOL. 11; NO 7 PART. 2; PP. 384-390; BIBL. 18 REF.Article

RAPID DEGRADATION IN DOUBLE-HETEROSTRUCTURE LASERS. II. SEMIQUANTITATIVE ANALYSES ON THE PROPAGATION OF DARK LINE DEFECTS.NANNICHI Y; MATSUI J; ISHIDA K et al.1975; JAP. J. APPL. PHYS.; JAP.; DA. 1975; VOL. 14; NO 10; PP. 1561-1568; BIBL. 24 REF.Article

CHARACTERISTICS OF THE JUNCTION-STRIPE-GEOMETRY GAAS-GAALAS DOUBLE-HETEROSTRUCTURE LASERS.NAMIZAKI H; KAN H; ISHII M et al.1974; JAP. J. APPL. PHYS.; JAP.; DA. 1974; VOL. 13; NO 10; PP. 1618-1623; BIBL. 7 REF.Article

PHOTON RECYCLING IN SEMICONDUCTOR LASERS.STERN F; WOODALL JM.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 9; PP. 3904-3906; BIBL. 10 REF.Article

GAAS DOUBLE HETEROSTRUCTURE LASING BEHAVIOR ALONG THE JUNCTION PLANE.HAKKI BW.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 1; PP. 292-302; BIBL. 26 REF.Article

RAPID DEGRADATION IN DOUBLE-HETEROSTRUCTURE LASERS. I. PROPOSAL OF A NEW MODEL FOR THE DIRECTIONAL GROWTH OF DISLOCATION NETWORKS.MATSUI J; ISHIDA K; NANNICHI Y et al.1975; JAP. J. APPL. PHYS.; JAP.; DA. 1975; VOL. 14; NO 10; PP. 1555-1560; BIBL. 18 REF.Article

STRIPED-SUBSTRATE DOUBLE-HETEROSTRUCTURE LASERS.BURNHAM RD; SCIFRES DR; TRAMONTANA JC et al.1975; I.E.E.E. J. QUANTUM ELECTRON.; U.S.A.; DA. 1975; VOL. 11; NO 7 PART. 2; PP. 418-420; BIBL. 5 REF.Article

ALXGA1-XAS DOUBLE-HETEROSTRUCTURE RIB-WAVEGUIDE INJECTION LASER.LEE TP; BURRUS CA; MILLER BJ et al.1975; I.E.E.E. J. QUANTUM ELECTRON.; U.S.A.; DA. 1975; VOL. 11; NO 7 PART. 2; PP. 432-435; BIBL. 12 REF.Article

HOW MUCH AL IN THE ALGAAS-GAAS LASER.RODE DL.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 9; PP. 3887-3891; BIBL. 31 REF.Article

SPECTRAL BEHAVIORS OF SPONTANEOUSLY PULSING DOUBLE-HETEROSTRUCTURE INJECTION LASERS.CHINONE N; ITO R.1974; JAP. J. APPL. PHYS.; JAP.; DA. 1974; VOL. 13; NO 3; PP. 575-576; BIBL. 8 REF.Article

HETEROSTRUCTURE INJECTION LASERS.PANISH MB.1975; I.E.E. TRANS-MICROWAVE THEORY TECH.; U.S.A.; DA. 1975; VOL. 23; NO 1; PP. 20-30; BIBL. 73 REF.Article

THE ANALYSIS OF OPTICAL SCATTERING IN DOUBLE-HETEROSTRUCTURE AND FIVE-LAYER HETEROSTRUCTURE (GAAL) AS/GAAS INJECTION LASERS.THOMPSON GHB; KIRKBY PA; WHITEAWAY JEA et al.1975; I.E.E.E. J. QUANTUM ELECTRON.; U.S.A.; DA. 1975; VOL. 11; NO 7 PART. 2; PP. 481-488; BIBL. 6 REF.Article

CALCULATIONS OF THE CONTINUOUS-WAVE LASING RANGE AND LIGHT-OUTPUT POWER FOR DOUBLE-HETEROSTRUCTURE LASERS.GAREL JONES P; DYMENT JC.1975; I.E.E.E. J. QUANTUM ELECTRON.; U.S.A.; DA. 1975; VOL. 11; NO 7 PART. 2; PP. 408-413; BIBL. 17 REF.Article

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