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STRUCTURAL AND ELECTRICAL PROPERTIES OF TA AND TA NITRIDES DEPOSITED BY CHEMICAL VAPOUR DEPOSITION.HIEBER K.1974; THIN SOLID FILMS; NETHERL.; DA. 1974; VOL. 24; NO 1; PP. 157-165; BIBL. 13 REF.Article

STRUCTURAL AND ELECTRICAL PROPERTIES OF PYROLYTICALLY DEPOSITED CARMET FILMSHIEBER K.1972; THIN SOLID FILMS; NETHERL.; DA. 1972; VOL. 13; NO 1; PP. 99-102; BIBL. 5 REF.Serial Issue

A novel technique for in situ measurements of thin film properties = Une nouvelle technique pour les mesures in situ des propriétés des couches mincesHIEBER, K.Thin solid films. 1985, Vol 130, Num 1-2, pp 125-134, issn 0040-6090Article

METALLKUNDE DUENNER SCHICHTEN = METALLOGRAPHIE DES COUCHES MINCESPOLITYCKI A; HIEBER K.1975; METALL; DTSCH.; DA. 1975; VOL. 29; NO NO 6; PP. 602-607; BIBL. 24 REF.Article

STRUCTURAL CHANGES OF EVAPORATED TANTALUM DURING FILM GROWTH = VARIATIONS DE STRUCTURE DU TANTALE EVAPORE PENDANT LA CROISSANCE DE LA COUCHEHIEBER K; MAYER NM.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 90; NO 1; PP. 43-50; BIBL. 7 REF.Conference Paper

STABILIZATION OF SPUTTERED BETA -TANTALUM BY A TANTALUM SILICIDE INTERLAYER = STABILISATION DU TANTALE BETA PULVERISE PAR UNE COUCHE DE SILICIURE DE TANTALEHIEBER K; LAUTENBACHER E.1980; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1980; VOL. 66; NO 2; PP. 191-196; BIBL. 5 REF.Article

COATING THE INSIDE SURFACES OF HOLLOW SECTIONS WITH A TANTALUM LAYER FOR CORROSION PROTECTION.HIEBER K; STOLZ M.1977; SIEMENS FORSCH.- U. ENTWICKL.-BER.; DTSCH.; DA. 1977; VOL. 6; NO 4; PP. 232-235; ABS. ALLEM.; BIBL. 7 REF.Article

DEPOSITION OF METAL, CARBIDE AND OXIDE FILMS BY THERMAL DECOMPOSITION OF METAL ACETYLACETONATES.POLITYCKI A; HIEBER K.1974; IN: SCI. TECHNOL. SURF. COATING. NATO ADV. STUDY INST., LONDON; 1972; LONDON; A ACAD. PRESS; DA. 1974; PP. 159-168; BIBL. 10 REF.Conference Paper

QUANTITATIVE ROENTGENFLUORESZENZ- UND BEUGUNGSANALYSEN AND DUENNEN SCHICHTEN. = ANALYSE QUANTITATIVE PAR DIFFRACTOMETRIE RX ET FLUORESCENCE RX DE COUCHES MINCESEBERSPACHER O; HIEBER K.1977; MIKROCHIM. ACTA, SUPPL.; AUTR.; DA. 1977; VOL. 7; PP. 567-674; ABS. ANGL.; BIBL. 1 REF.Article

SELECTED-ZONE DARK-FIELD ELECTRON MICROSCOPY.HIEBER K; MEYER A.1976; SIEMENS FORSCH.-U. ENTWICKL.-BER.; DTSCH.; DA. 1976; VOL. 5; NO 5; PP. 303-307; BIBL. 7 REF.Article

STRUCTURE AND ELECTRICAL PROPERTIES OF THIN-FILM RESISTOR MATERIALS.POLITYCKI A; HIEBER K.1974; SIEMENS FORSCH.- U. ENTWICKL.-BER.; DTSCH.; DA. 1974; VOL. 3; NO 4; PP. 248-254; BIBL. 10 REF.Article

STRUCTURE ET PROPRIETES ELECTRIQUES DE COUCHES MINCES D'OR-NICKEL ET D'OR-VANADIUMPOLITYCKI A; HIEBER K; STOZL M et al.1972; VIDE; FR.; DA. 1972; NO 158, SUPPL; PP. 101-107Serial Issue

BERECHNUNG DES SPEZIFISCHEN ELEKTRISCHEN WIDERSTANDES ZWEIPHASIGER WIDERSTANDSMATERIALEN = CALCUL DE LA RESISTIVITE ELECTRIQUE DES MATERIAUX A 2 PHASES POUR RESISTANCES ELECTRIQUESSCHAFER A; HIEBER K; POLITYCKI A et al.1972; Z. METALLKDE; DTSCH.; DA. 1972; VOL. 63; NO 11; PP. 720-724; ABS. ANGL.; BIBL. 4 REF.Serial Issue

CALCUL DE LA RESISTIVITE DES MATERIAUX A DEUX PHASES, POUR RESISTANCESCHAFER A; HIEBER K; POLITYCHI A et al.1975; ; S.L.; DA. 1975; DE L'ALLEM.: ZEITSCHRIFT FUER METALLKUNDE, NOVEMBRE 1972; 63, NO 11, 720-724Miscellaneous

UNIVERSAL CHEMICAL VAPOUR DEPOSITION SYSTEM FOR METALLURGICAL COATINGSSTOLZ M; HIEBER K; WIECZOREK C et al.1983; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1983; VOL. 100; NO 3; PP. 209-218; BIBL. 5 REF.Article

Influence of slight deviations from TaSi2 stoichiometry on the high-temperature stability of tantalum silicide/silicon contactsOPPOLZER, H; NEPPL, F; HIEBER, K et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1984, Vol 2, Num 4, pp 630-635, issn 0734-211XArticle

Chemical vapour deposition of oxide and metal films for VLSI applicationsHIEBER, K; KOÊRNER, H; TREICHEL, H et al.Thin solid films. 1989, Vol 181, Num 1-2, pp 75-84, issn 0040-6090, 10 p.Conference Paper

Dopant diffusion from ion-implanted TaSi2 into SiGIERISCH, H; NEPPL, F; FRENZEL, E et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1987, Vol 5, Num 2, pp 508-514, issn 0734-211XArticle

Application of bioactive layers for chemical sensors and analysis systemsDROST, S; HAUCK, S; YACOUB-GEORGE, E et al.Materials science forum. 1998, pp 521-524, issn 0255-5476, isbn 0-87849-815-XConference Paper

Vertically integrated circuits : A key technology for future high performance systemsENGELHARDT, M; HÜBNER, H; SCHWARZL, S et al.Le Vide (1995). 1997, Vol 53, Num 284, pp 187-192, issn 1266-0167, SUPConference Paper

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