PINE-NEEDLE SOUND: A NEW TOOL FOR SPHINCTEROPLASTYHISHIDA Y.1981; AM. J. SURG.; ISSN 0002-9610; USA; DA. 1981; VOL. 141; NO 6; PP. 746-748; BIBL. 7 REF.Article

CONTACT DOUBLE-CONTRAST CHOLANGIOGRAPHYHISHIDA Y.1979; SURGERY; USA; DA. 1979; VOL. 85; NO 5; PP. 554-559; BIBL. 7 REF.Article

MoMobile communication system: its semiconductor technologyHISHIDA, Y; KAZAMA, M.Hitachi review. 1993, Vol 42, Num 3, pp 95-100, issn 0018-277XArticle

The preparation of conductive ZnS films by using MBE with a single effusion sourceYONEDA, K; TODA, T; HISHIDA, Y et al.Journal of crystal growth. 1984, Vol 67, Num 1, pp 125-134, issn 0022-0248Article

Deep electron traps in undoped, molecular beam epitaxially grown ZnSeYONEDA, K; HISHIDA, Y; ISHII, H et al.Applied physics letters. 1985, Vol 47, Num 7, pp 702-704, issn 0003-6951Article

Chemical synthesis of polysaccharides. II: A synthetic polysaccharide having two hydroxyl groups in its repeating unit, 4-deoxy-(1→16)-α-D, L-xylo-hexopyramanOKADA, M; SUMITOMO, H; HISHIDA, Y et al.Die Makromolekulare Chemie. 1983, Vol 184, Num 9, pp 1823-1830, issn 0025-116XArticle

Application of focused ion beam techniques to the fabrication of lateral-type thin-film edge field emittersGOTOH, Y; INOUE, K; OHTAKE, T et al.Japanese journal of applied physics. 1994, Vol 33, Num 1A, pp L63-L66, issn 0021-4922, 2Article

Reduction of p-ZnSe/p-GaAs non-ohmic barrier by inserting a GaN buffer layerHISHIDA, Y; YOSHIE, T; YAGI, K et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 828-832, issn 0022-0248, 2Conference Paper

P-type conducting ZnSe and ZnSSe by N₂-gas doping during molecular beam epitaxyHISHIDA, Y; YOSHIE, T; YAGI, K et al.Japanese journal of applied physics. 1996, Vol 35, Num 2B, pp 1415-1419, issn 0021-4922, 1Conference Paper