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DEPENDENCE OF THE MOBILITY AND THE CONCENTRATION OF TWO-DIMENSIONAL ELECTRON GAS IN SELECTIVELY DOPED GAAS/N-AL_XGA_1-XAS HETEROSTRUCTURE ON THE ALAS MOLE FRACTIONSAITO J; NANBU K; ISHIKAWA T et al.1983; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1983; VOL. 22; NO 2; PART. 2; PP. L79-L81; BIBL. 10 REF.Article

MONOLITHIC 1 X 4 ARRAY OF UNIFORM RADIANCE ALGAAS-GAAS LED'S GROWN BY MOLECULAR BEAM EPITAXYSUGAHARA T; WADA O; FUJII T et al.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 6; PART. 2; PP. 349-350; BIBL. 5 REF.Article

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Direst fabrication of submicron pattern on GaAs by finely focused ion beam systemOKAMURA, S; TAGUCHI, T; HIYAMIZU, S et al.Fujitsu scientific and technical journal. 1986, Vol 22, Num 2, pp 98-105, issn 0016-2523Article

Influence of MBE growth conditions on persistent photoconductivity effects in N-AlGaAs and selectively doped GaAs/AlGaAs heterostructuresISHIKAWA, T; KONDO, K; HIYAMIZU, S et al.Japanese journal of applied physics. 1985, Vol 24, Num 6, pp L408-L410, issn 0021-4922Article

The effects of tungsten-halogen lamp annealing on a selectively doped GaAs/N-AlGaAs heterostructure grown by MBETATSUTA, S; INATA, T; OKAMURA, S et al.Japanese journal of applied physics. 1984, Vol 23, Num 3, pp L147-L149, issn 0021-4922, 2Article

A field-effect quantum tunneling transistor : observation of negative transconductance and analysisYANG, C. H.Surface science. 1992, Vol 267, Num 1-3, pp 630-633, issn 0039-6028Conference Paper

New epitaxial growth method for modulated structures using Van der Waals interactionsKOMA, A.Surface science. 1992, Vol 267, Num 1-3, pp 29-33, issn 0039-6028Conference Paper

Pseudopotential appraoch to band structure and stability for GaAs/Ge superlatticesITO, T; OHNO, T.Surface science. 1992, Vol 267, Num 1-3, pp 87-89, issn 0039-6028Conference Paper

Self-consistent electronic structure and optical selection rules for tetrahedral quantum dotsSTOPA, M. P.Surface science. 1992, Vol 267, Num 1-3, pp 286-290, issn 0039-6028Conference Paper

Super-flat (411)A interfaces and uniformly corrugated (775)B interfaces in GaAs/AlGaAs and InGaAs/InAlAs heterostructures grown by molecular beam epitaxyHIYAMIZU, S; SHIMOMURA, S; KITADA, T et al.Microelectronics journal. 1999, Vol 30, Num 4-5, pp 379-385, issn 0959-8324Article

Quantum dot lattice and enhanced excitonic optical nonlinearityTAKAGAHARA, T.Surface science. 1992, Vol 267, Num 1-3, pp 310-314, issn 0039-6028Conference Paper

Raman scattering study of ultra-thin layers of AlAs buried in GaAsTANINO, H; AMANO, S.Surface science. 1992, Vol 267, Num 1-3, pp 422-425, issn 0039-6028Conference Paper

Spin-flip scattering times in semiconductor quantum wellsBASTARD, G; FERREIRA, R.Surface science. 1992, Vol 267, Num 1-3, pp 335-341, issn 0039-6028Conference Paper

Back-gated field effect in a double two-dimensional electron gas structureSASA, S; MUTO, S; HIYAMIZU, S et al.Japanese journal of applied physics. 1986, Vol 25, Num 8, pp L674-L676, issn 0021-4922, 2Article

Back-gated field effect in a double two-dimensional electron gas structureSASA, S; MUTO, S; HIYAMIZU, S et al.Japanese journal of applied physics. 1986, Vol 25, Num 8, pp L674-L676, issn 0021-4922, 2Article

MBE growth of InGaAlAs lattice-matched to InP by pulsed molecular beam methodFUJII, T; NAKATA, Y; SUGIYAMA, Y et al.Japanese journal of applied physics. 1986, Vol 25, Num 3, pp L254-L256, issn 0021-4922, 2Article

Application of high-resolution Raman spectroscopy to the study of superlattice acoustic phononsLOCKWOOD, D. J.Surface science. 1992, Vol 267, Num 1-3, pp 438-441, issn 0039-6028Conference Paper