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Activation of Mg implanted in GaN by multicycle rapid thermal annealingANDERSON, T. J; FEIGELSON, B. N; KUB, F. J et al.Electronics letters. 2014, Vol 50, Num 3, pp 197-198, issn 0013-5194, 2 p.Article

Crystal-direction dependence of uniaxial tensile strain in ultra-thin SOIPETERSON, R. L; HOBART, K. D; YIN, H et al.IEEE international SOI conference. 2004, pp 39-41, isbn 0-7803-8497-0, 1Vol, 3 p.Conference Paper

Transient analysis of 3.3kV double-side double-gate IGBTsHOBART, K. D; KUB, F. J; ANCONA, M et al.International Symposium on Power Semiconductor Devices & ICs. 2004, pp 273-276, isbn 4-88686-060-5, 4 p.Conference Paper

High quality AlN and GaN grown on compliant Si/SiC substrates by gas source molecular beam epitaxyKIPSHIDZE, G; NIKISHIN, S; FATEMI, M et al.Journal of electronic materials. 2001, Vol 30, Num 7, pp 825-828, issn 0361-5235Article

InAIAsSb/InGaSb double heterojunction bipolar transistorMAGNO, R; BOOS, J. B; CAMPBELL, P. M et al.Electronics Letters. 2005, Vol 41, Num 6, pp 370-371, issn 0013-5194, 2 p.Article

Direct wafer bonded abrupt junction tunnel diodesESSER, R. H; HOBART, K. D; KUB, F. J et al.Journal of the Electrochemical Society. 2004, Vol 151, Num 6, pp G387-G390, issn 0013-4651Article

Si/Si1-xGex heterojunction bipolar transistors with high breakdown voltageHOBART, K. D; KUB, F. J; PAPANICOLOAU, N. A et al.IEEE electron device letters. 1995, Vol 16, Num 5, pp 205-207, issn 0741-3106Article

Sb surface segregation and doping in Si(100) grown at reduced temperature by molecular beam epitaxyHOBART, K. D; GODBEY, D. J; THOMPSON, P. E et al.Applied physics letters. 1993, Vol 63, Num 10, pp 1381-1383, issn 0003-6951Article

Selective removal of Si1-xGex from (100) Si using HNO3 and HFGODBEY, D. J; KRIST, A. H; HOBART, K. D et al.Journal of the Electrochemical Society. 1992, Vol 139, Num 10, pp 2943-2947, issn 0013-4651Article

Investigation of the Epitaxial Graphene/p-SiC HeterojunctionANDERSON, T. J; HOBART, K. D; KOEHLER, A. D et al.IEEE electron device letters. 2012, Vol 33, Num 11, pp 1610-1612, issn 0741-3106, 3 p.Article

Characterization of Recessed-Gate AIGaN/GaN HEMTs as a Function of Etch DepthANDERSON, T. J; TADJER, M. J; MASTRO, M. A et al.Journal of electronic materials. 2010, Vol 39, Num 5, pp 478-481, issn 0361-5235, 4 p.Article

UV activation treatment for hydrophobic wafer bondingHOAI DANG; HOLL, Susan L; COLINGE, C. A et al.Proceedings - Electrochemical Society. 2005, pp 376-384, issn 0161-6374, isbn 1-56677-460-8, 9 p.Conference Paper

Transfer of ultrathin silicon layers to polycrystalline SiC substrates for the growth of 3C-SiC epitaxial filmsHOBART, K. D; KUB, F. J; FATEMI, M et al.Journal of the Electrochemical Society. 1999, Vol 146, Num 10, pp 3833-3836, issn 0013-4651Article

Growth of low-dimensional structures on nonplanar patterned substratesHOBART, K. D; KUB, F. J; GRAY, H. F et al.Journal of crystal growth. 1995, Vol 157, Num 1-4, pp 338-343, issn 0022-0248Conference Paper

Spontaneous Conversion of Basal Plane Dislocations in 4° Off-Axis 4H-SiC Epitaxial LayersMYERS-WARD, R. L; MAHADIK, N. A; WHEELER, V. D et al.Crystal growth & design. 2014, Vol 14, Num 11, pp 5331-5338, issn 1528-7483, 8 p.Article

Electroluminescence Spectral Imaging of Extended Defects in 4H-SiCGILES, A. J; CALDWELL, J. D; STAHLBUSH, R. E et al.Journal of electronic materials. 2010, Vol 39, Num 6, pp 777-780, issn 0361-5235, 4 p.Conference Paper

AlGaN/GaN heterostructure field effect transistors fabricated on 100mm Si/poly SiC complosite substratesROBERTS, J. C; RAJAGOPAL, P; KUB, F. J et al.Proceedings - Electrochemical Society. 2005, pp 151-156, issn 0161-6374, isbn 1-56677-460-8, 6 p.Conference Paper

Fabrication of silicon-on-diamond substratesFEYGELSON, T. I; HOBART, K. D; ANCONA, M et al.Proceedings - Electrochemical Society. 2005, pp 439-449, issn 0161-6374, isbn 1-56677-460-8, 11 p.Conference Paper

Improved low-temperature Si-Si hydrophilic wafer bondingESSER, R. H; HOBART, K. D; KUB, F. J et al.Journal of the Electrochemical Society. 2003, Vol 150, Num 3, pp G228-G231, issn 0013-4651Article

Relaxation of compressed elastic islands on a viscous layerLIANG, J; HUANG, R; YIN, H et al.Acta materialia. 2002, Vol 50, Num 11, pp 2933-2944, issn 1359-6454Article

Epitaxial Si-based tunnel diodesTHOMPSON, P. E; HOBART, K. D; TWIGG, M. E et al.Thin solid films. 2000, Vol 380, Num 1-2, pp 145-150, issn 0040-6090Conference Paper

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