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COMPOUND SEMICONDUCTORSHOLONYAK N JR; STILLMAN GE; WOLFE CM et al.1978; J. ELECTROCHEM. SOC.; USA; DA. 1978; VOL. 125; NO 12; PP. 487C-499C; BIBL. 128 REF.Article

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PLANAR ZN DIFFUSION IN INP.REZEK EA; WRIGHT PD; HOLONYAK N JR et al.1978; SOLID-STATE ELECTRON.; G.B.; DA. 1978; VOL. 21; NO 2; PP. 325-329; BIBL. 15 REF.Article

BANDFILLING IN LIQUID PHASE EPITAXIAL INP-IN_1-XGA_XP_1-ZAS_Z-INP QUANTUM-WELL HETEROSTRUCTURE LASERSREZEK EA; VOJAK BA; HOLONYAK N JR et al.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 11; PP. 5398-5403; BIBL. 14 REF.Article

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ZN DIFFUSION AND DISORDERING OF AN ALAS-GAAS SUPERLATTICE ALONG ITS LAYERSKIRCHOEFER SW; HOLONYAK N JR; COLEMAN JJ et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 1; PP. 766-768; BIBL. 10 REF.Article

QUANTUM-WELL HETEROSTRUCTURE LASERSHOLONYAK N JR; KOLBAS RM; DUPUIS RD et al.1980; I.E.E.E. J. QUANTUM ELECTRON.; USA; DA. 1980; VOL. 16; NO 2; PP. 170-186; BIBL. 56 REF.Article

DETERMINATION OF THE INDIRECT BAND EDGE OF GAAS BY QUANTUM WELL BANDFILLING (L₂ EQUIV. A 100 A)DUPUIS RD; DAPKUS PD; KOLBAS RM et al.1978; SOLID STATE COMMUNIC.; GBR; DA. 1978; VOL. 27; NO 5; PP. 531-533; BIBL. 15 REF.Article

RECOMBINAISON PROCESSES INVOLVING ZN AND N IN GAAS_1-XP_X.CAMPBELL JC; HOLONYAK N JR; LEE MH et al.1974; PHYS. REV., B; U.S.A.; DA. 1974; VOL. 10; NO 4; PP. 1755-1757; BIBL. 10 REF.Article

CONTINUOUS ROOM-TEMPERATURE MULTIPLE-QUANTUM-WELL AL_XGA_1-XAS-GAAS INJECTION LASERS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITIONDUPUIS RD; DAPKUS PD; HOLONYAK N JR et al.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 7; PP. 487-489; BIBL. 25 REF.Article

LIQUID PHASE EPITAXIAL GROWTH AND PHOTOLUMINESCENCE CHARACTERIZATION OF LASER-QUALITY (100) IN_1-XGA_XP.HITCHENS WR; HOLONYAK N JR; LEE MH et al.1974; J. CRYST. GROWTH; NETHERL.; DA. 1974; VOL. 27; PP. 154-165; BIBL. 27 REF.Article

GROWTH AND CHARACTERIZATION OF INP. THE WORKSHOP WAS HELD IN HARWICHPORT, MA, USA ON JUNE 17, 18 AND 19, 1980KENNEDY JK ED; BARDSLEY W; HOLONYAK N JR et al.1981; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1981; VOL. 54; NO 1; 168 P.; BIBL. DISSEM.Conference Paper

ROOM-TEMPERATURE CONTINUOUS OPERATION OF PHOTOPUMPED MO-CVD AL_XGA_1-X AS-GAAS-AL_X GA_1-X AS QUANTUM-WELL LASERSHOLONYAK N JR; KOLBAS RM; DUPUIS RD et al.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 1; PP. 73-75; BIBL. 17 REF.Article

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VARIATION OF EFFECTIVE INDEX OF REFRACTION IN A DOUBLE-HETEROJUNCTION LASER (IN_1-XGA_XP_1-ZAS_Z).WRIGHT PD; REZEK EA; LUDOWISE MJ et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 5; PP. 2091-2092; BIBL. 10 REF.Article

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IDENTIFICATION OF RECOMBINATION LUMINESCENCE TRANSITIONS IN N-DOPED GAAS_1-XP_X (X=0.87).WOLFORD DJ; STREETMAN BG; NELSON RJ et al.1976; SOLID STATE COMMUNIC.; G.B.; DA. 1976; VOL. 19; NO 8; PP. 741-747; BIBL. 30 REF.Article

STIMULATED EMISSION ON N_X("A-LINE") RECOMBINATION TRANSITIONS IN NITROGEN-IMPLANTED GAAS_{1 - X}P_X(X EQUIV. A 0.37).WOLFORD DJ; STREETMAN BG; NELSON RJ et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 12; PP. 711-713; BIBL. 31 REF.Article

BAND STRUCTURE ENHANCEMENT AND OPTIMIZATION OF RADIATIVE RECOMBINATION IN GAAS_1-XP_X: N(AND IN_1-XGA_XP:N).CAMPBELL JC; HOLONYAK N JR; CRAFORD MG et al.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 10; PP. 4543-4553; BIBL. 1 P.Article