InGaN quantum dot growth in the limits of Stranski―Krastanov and spinodal decomposition : Physics of nitride-based nanostructured light-emitting devicesFIGGE, Stephan; TESSAREK, Christian; ASCHENBRENNER, Timo et al.Physica status solidi. B. Basic research. 2011, Vol 248, Num 8, pp 1765-1776, issn 0370-1972, 12 p.Article

Growth of AlN by pulsed and conventional MOVPEKRÖNCKE, Hanno; FIGGE, Stephan; ASCHENBRENNER, Timo et al.Journal of crystal growth. 2013, Vol 381, pp 100-106, issn 0022-0248, 7 p.Article

The tenth international conference on II-VI compounds (Part 1)GUTOWSKI, Jürgen; HEINKE, Heidrun; HOMMEL, Detlef et al.Physica status solidi. B. Basic research. 2002, Vol 229, Num 1, issn 0370-1972, 614 p.Conference Proceedings

Phenomenological analysis of codoping role of statistical fluctuationsMARFAING, Y.Physica status solidi. B. Basic research. 2002, Vol 229, Num 1, pp 229-238, issn 0370-1972Conference Paper

Growth and characterization of nitride-based distributed Bragg reflectors : Physics of nitride-based nanostructured light-emitting devicesKRUSE, Carsten; DARTSCH, Heiko; ASCHENBRENNER, Timo et al.Physica status solidi. B. Basic research. 2011, Vol 248, Num 8, pp 1748-1755, issn 0370-1972, 8 p.Article

High stability of CdZnSSe active layers in znse-based laser diodes by introducing strain-compensating barrier layersGUST, Arne; KLUDE, Matthias; UETA, Akio et al.Physica status solidi. B. Basic research. 2004, Vol 241, Num 3, pp 727-730, issn 0370-1972, 4 p.Conference Paper

Modelling of band offsets in II-VI heterostructuresÜNLÜ, H.Physica status solidi. B. Basic research. 2002, Vol 229, Num 1, pp 581-585, issn 0370-1972Conference Paper

Heat generation and dissipation in GaN-based light emitting devicesFIGGE, Stephan; BÖTTCHER, Tim; HOMMEL, Detlef et al.Physica status solidi. A. Applied research. 2003, Vol 200, Num 1, pp 83-86, issn 0031-8965, 4 p.Conference Paper

Doping properties of ordered-vacancy Ga₂Se₃ compounds. A theoretical studyISHIKAWA, M; NAKAYAMA, T.Physica status solidi. B. Basic research. 2002, Vol 229, Num 1, pp 301-304, issn 0370-1972Conference Paper

Photoelectrical and optical properties of II-VI compound semiconductor surfaces and their interfacesSHMAVONYAN, G. Sh.Physica status solidi. B. Basic research. 2002, Vol 229, Num 1, pp 89-92, issn 0370-1972Conference Paper

First-principles study of doping limits of CdTeWEI, Su-Huai; ZHANG, S. B.Physica status solidi. B. Basic research. 2002, Vol 229, Num 1, pp 305-310, issn 0370-1972Conference Paper

Optical characterization of ZnSe-based quantum structures fabricated by CH₄/H₂ reactive ion etchingMAKINO, H; FUKUSHI, H; YAO, T et al.Physica status solidi. B. Basic research. 2002, Vol 229, Num 1, pp 567-571, issn 0370-1972Conference Paper

Non-diffusive in-plane transport of excitons in ZnSe quantum wellsZHAO, H; MOEHL, S; KALT, H et al.Physica status solidi. B. Basic research. 2002, Vol 229, Num 1, pp 577-580, issn 0370-1972Conference Paper

Quantum dot emission confined by a spherical photonic dotARTEMYEV, M; WOGGON, U; LANGBEIN, W et al.Physica status solidi. B. Basic research. 2002, Vol 229, Num 1, pp 423-426, issn 0370-1972Conference Paper

Strategies for controlling the conductivity of wide-band-gap semiconductorsVAN DE WALLE, Chris G.Physica status solidi. B. Basic research. 2002, Vol 229, Num 1, pp 221-228, issn 0370-1972Conference Paper

Self-consistent calculations of excitonic states in T-shaped quantum wiresKYRYCHENKO, F. V; KOSSUT, J.Physica status solidi. B. Basic research. 2002, Vol 229, Num 1, pp 557-561, issn 0370-1972Conference Paper

Vacancy-order-induced optical anisotropy in □₁II₁III₂VI₄ compoundsISHIKAWA, M; NAKAYAMA, T.Physica status solidi. B. Basic research. 2002, Vol 229, Num 1, pp 297-300, issn 0370-1972Conference Paper

Cathodoluminescence defectoscopy of II-VI compoundsNAZAROV, M. V.Physica status solidi. B. Basic research. 2002, Vol 229, Num 1, pp 323-328, issn 0370-1972Conference Paper

Electronic structures of a quantum well of A_1-xB_x alloy semiconductor in the coherent potential approximationSHINOZUKA, Y; KIDA, H; FUJIBAYASHI, M et al.Physica status solidi. B. Basic research. 2002, Vol 229, Num 1, pp 553-556, issn 0370-1972Conference Paper

Strain in GaN layers grown by metalorganic vapor phase epitaxyEINFELDT, Sven; HOMMEL, Detlef; DAVIS, Robert F et al.Vacuum science and technology : nitrides as seen by the technology 2002. 2002, pp 147-166, isbn 81-7736-198-8, 20 p.Book Chapter

Sonic-stimulated change of the charge carrier concentration in n-Cd_xHg_1-xTe alloys with different initial state of the defect structureSAVKINA, R. K; VLASENKO, O. I.Physica status solidi. B. Basic research. 2002, Vol 229, Num 1, pp 275-278, issn 0370-1972Conference Paper

Microstructural and compositional analyses of GaN-based nanostructures : Physics of nitride-based nanostructured light-emitting devicesPRETORIUS, Angelika; SCHMIDT, Thomas; ASCHENBRENNER, Timo et al.Physica status solidi. B. Basic research. 2011, Vol 248, Num 8, pp 1822-1836, issn 0370-1972, 15 p.Article

Growth and deep level characterisation of undoped high resistivity CdTe crystalsZHA, M; GOMBIA, E; BISSOLI, F et al.Physica status solidi. B. Basic research. 2002, Vol 229, Num 1, pp 15-18, issn 0370-1972Conference Paper

Preparation of CdTe quantum structures on ZnTe by hot-wall epitaxyKOUGA, K; YONEYAMA, R; KUWABARA, H et al.Physica status solidi. B. Basic research. 2002, Vol 229, Num 1, pp 149-153, issn 0370-1972Conference Paper

Diffusion profiles of Se in bulk ZnTeKOBAYASHI, M; TERAKADO, H; SAWADA, R et al.Physica status solidi. B. Basic research. 2002, Vol 229, Num 1, pp 265-268, issn 0370-1972Conference Paper