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au.\*:("HONG YU YU")

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A Self-Compliant One-Diode-One-Resistor Bipolar Resistive Random Access Memory for Low Power ApplicationWENJUN LIU; XUAN ANH TRAN; ZHENG FANG et al.IEEE electron device letters. 2014, Vol 35, Num 2, pp 196-198, issn 0741-3106, 3 p.Article

Broadband absorption enhancement in randomly positioned silicon nanowire arrays for solar cell applicationsQING GUO DU; CHAN HIN KAM; HILMI VOLKAN DEMIR et al.Optics letters. 2011, Vol 36, Num 10, pp 1884-1886, issn 0146-9592, 3 p.Article

Enhanced optical absorption in nanopatterned silicon thin films with a nano-cone-hole structure for photovoltaic applicationsQING GUO DU; CHAN HIN KAM; HILMI VOLKAN DEMIR et al.Optics letters. 2011, Vol 36, Num 9, pp 1713-1715, issn 0146-9592, 3 p.Article

Work function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devicesXIN PENG WANG; LIM, Andy Eu-Jin; BIESEMANS, Serge et al.I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 11, pp 2871-2877, issn 0018-9383, 7 p.Article

Boosting Short-Circuit Current With Rationally Designed Periodic Si Nanopillar Surface Texturing for Solar CellsWONG, She Mein; HONG YU YU; YALI LI et al.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 9, pp 3224-3229, issn 0018-9383, 6 p.Article

Vertical-Si-Nanowire SONOS Memory for Ultrahigh-Density ApplicationMINGCONG CHEN; HONG YU YU; SINGH, Navab et al.IEEE electron device letters. 2009, Vol 30, Num 8, pp 879-881, issn 0741-3106, 3 p.Article

A Self-Rectifying AlOy Bipolar RRAM With Sub-50-μA Set/Reset Current for Cross-Bar ArchitectureTRAN, X. A; ZHU, W; LIU, W. J et al.IEEE electron device letters. 2012, Vol 33, Num 10, pp 1402-1404, issn 0741-3106, 3 p.Article

Influence of Channel Layer Thickness on the Electrical Performances of Inkjet-Printed In-Ga-Zn Oxide Thin-Film TransistorsYE WANG; XIAO WEI SUN; GOH, Gregory Kia Liang et al.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 2, pp 480-485, issn 0018-9383, 6 p.Article

The Impact of Stacked Cap Layers on Effective Work Function With HfSiON and SiON Gate DielectricsCHO, Hag-Ju; HONG YU YU; RAGNARSSON, Lars-Ake et al.IEEE electron device letters. 2008, Vol 29, Num 7, pp 743-745, issn 0741-3106, 3 p.Article

Effects of Al2O3 dielectric cap and nitridation on device performance, scalability, and reliability for advanced high-κ/metal gate pMoSFET applicationsCHANG, Vincent S; RAGNARSSON, Lars-Ake; HONG YU YU et al.I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 10, pp 2738-2749, issn 0018-9383, 12 p.Article

Endurance Degradation in Metal Oxide-Based Resistive Memory Induced by Oxygen Ion Loss EffectBING CHEN; JIN FENG KANG; DIM LEE KWONG et al.IEEE electron device letters. 2013, Vol 34, Num 10, pp 1292-1294, issn 0741-3106, 3 p.Article

Ni fully germanosilicide for gate electrode application in pMOSFETs with HfSiON gate dielectricsHONG YU YU; SINGANAMALLA, Raghunath; BIESEMANS, Serge et al.I.E.E.E. transactions on electron devices. 2006, Vol 53, Num 6, pp 1398-1404, issn 0018-9383, 7 p.Article

Observation of the Ambient Effect in BTI Characteristics of Back-Gated Single Layer Graphene Field Effect TransistorsWEN JUN LIU; XIAO WEI SUN; HONG YU YU et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 8, pp 2682-2686, issn 0018-9383, 5 p.Article

Achieving conduction band-edge effective work functions by La2O3 capping of hafnium silicatesRAGNARSSON, Lars-Ake; CHANG, Vincent S; BIESEMANS, Serge et al.IEEE electron device letters. 2007, Vol 28, Num 6, pp 486-488, issn 0741-3106, 3 p.Article

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