THE DIFFUSION OF HOT ELECTRONS ACROSS A SEMICONDUCTOR BASERIDLEY BK.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 24; NO 2; PP. 147-154; BIBL. 32 REF.Article

HOT-ELECTRON INJECTION INTO THE OXIDE IN N-CHANNEL MOS DEVICESEITAN B; FROHMAN BENTCHKOWSKY D.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 3; PP. 328-340; BIBL. 18 REF.Article

HALL EFFECT OF HOT ELECTRONS IN N-PBTE.ROZENBERGS J; HEINRICH H; JANTSCH W et al.1977; SOLID STATE COMMUNIC.; G.B.; DA. 1977; VOL. 22; NO 7; PP. 439-442; ABS. ALLEM.; BIBL. 12 REF.Article

POLARISATION DE LA PHOTOLUMINESCENCE CHAUDE DANS LES SEMI-CONDUCTEURS DU TYPE GAASZEMSKIJ VI; ZAKHARCHENYA BP; MIRLIN DN et al.1976; PIS'MA ZH. EKSPER. TEOR. FIZ.; S.S.S.R.; DA. 1976; VOL. 24; NO 2; PP. 96-99; BIBL. 7 REF.Article

SPECTRE DES ELECTRONS ENERGETIQUES PRES DE LA MAGNETOPAUSE D'APRES LES MESURES DU SATELLITE "PROGNOZ"NIKOLAEVA NS; PISARENKO NF.1979; KOSM. ISSLEDOV.; SUN; DA. 1979; VOL. 17; NO 2; PP. 302-305; BIBL. 9 REF.Article

MAGNETORESISTANCE DU SILICIUM N DANS LES CHAMPS ELECTRIQUES FAIBLEMENT ECHAUFFANTSDENIS V; KRUKONIS V; TVARDAUSKAS G et al.1977; LITOV. FIZ. SBOR.; S.S.S.R.; DA. 1977; VOL. 17; NO 6; PP. 781-786; ABS. LITU. ANGL.; BIBL. 10 REF.Article

HOT ELECTRON DIFFUSION IN FINE LINE SEMICONDUCTOR DEVICESJONES WT; HESS K; IAFRATE BJ et al.1982; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 10; PP. 1017-1021; BIBL. 20 REF.Article

LIGHT EMISSION FROM HOT ELECTRONS IN ZINC OXIDE MS DIODESMINAMI T; NANTO H; TAKATA S et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 73; NO 2; PP. K293-K297; BIBL. 15 REF.Article

EQUIVALENT TEMPERATURE OF HOT ELECTRONSVANDERZIEL A.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 10; PP. 1035-1036; BIBL. 7 REF.Article

HARMONIC GENERATION DUE TO HOT ELECTRONS IN SURFACE INVERSION LAYERSRAY CHOUDHURY D; SARKAR CK; CHATTOPADHYAY D et al.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 2; PP. 127-128; BIBL. 7 REF.Article

THERMOELEMENT SEMICONDUCTEUR EN TANT QUE MILIEU D'ELECTRONS CHAUDSBUGAEV AS; VAKSER AI.1980; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1980; VOL. 14; NO 3; PP. 444-449; BIBL. 17 REF.Article

HOT ELECTRON EFFECTS IN LANDAU LEVELS OF MOS INVERSION LAYERSUCHIMURA N; UEMURA Y.1979; J. PHYS. SOC. JPN.; ISSN 0031-9015; JPN; DA. 1979; VOL. 47; NO 5; PP. 1417-1425; BIBL. 8 REF.Article

ELECTROLUMINESCENCE DE STRUCTURES AL-SIO-AU EN COUCHES MINCESDELAVNAY G; DESPUJOLS J.1978; THIN SOLID FILMS; NLD; DA. 1978; VOL. 51; NO 2; PP. 227-235; ABS. ENG; BIBL. 18 REF.Article

DYNAMIQUE D'ECHAUFFEMENT DES ELECTRONS DANS LES CHAMPS ELECTRIQUE ET MAGNETIQUE QUANTIFIANT LONGITUDINAUXMATULIS A; PIRAGAS K; TAMASHYAVICHYUS A et al.1978; FIZ. TVERD. TELA; SUN; DA. 1978; VOL. 20; NO 9; PP. 2700-2707; BIBL. 17 REF.Article

SEMICONDUCTEURS ELECTRIQUEMENT ACTIFS ET LEUR UTILISATION POUR LA GENERATION ET LA CONVERSION DE FREQUENCE D'OSCILLATIONS UHFKALASHNIKOV SG; KAGAN MS; KUKUSHKIN VV et al.1978; RADIOTEKH. I ELEKTRON.; SUN; DA. 1978; VOL. 23; NO 9; PP. 1915-1925; BIBL. 45 REF.Article

EXPERIMENTAL STUDIES OF FAST ELECTRON GENERATION IN LASER-PRODUCED PLASMAS AT 1.06, 0.53 AND 0.26 MU M LASER WAVELENGTHAMIRANOFF F; FABBRO R; FABRE E et al.1982; J. PHYS.; ISSN 0302-0738; FRA; DA. 1982; VOL. 43; NO 7; PP. 1037-1042; ABS. FRE; BIBL. 21 REF.Article

ENERGY-LOSS MECHANISMS OF HOT ELECTRONS IN N-INSBSHIMOMAE K; HIROSE Y; HAMAGUCHI C et al.1981; J. PHYS., C, SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1981; VOL. 14; NO 33; PP. 5151-5169; BIBL. 26 REF.Article

ENERGY LOSS AND ESCAPE DEPTH OF HOT ELECTRONS FROM SHALLOW P-N JUNCTIONS IN SILICONSHAHRIARY I; SCHWANK JR; ALLEN FG et al.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 3 PART. 1; PP. 1428-1438; BIBL. 37 REF.Article

ON THE DISPLACED MAXWELLIAN DISTRIBUTION FUNCTION AND ON THE PROBLEM OF WARM ELECTRONS IN SEMICONDUCTORS.HRIVNAK L.1977; ACTA PHYS. SLOV.; TCHECOSL.; DA. 1977; VOL. 27; NO 4; PP. 233-239; ABS. RUSSE; BIBL. 14 REF.Article

WARM ELECTRONS ON THE LIQUID ⁴HE SURFACE.SAITOH M.1977; J. PHYS. SOC. JAP.; JAP.; DA. 1977; VOL. 42; NO 1; PP. 201-209; BIBL. 26 REF.Article

COEFFICIENT DE DIFFUSION DES ELECTRONS CHAUDS DANS LE GERMANIUMASHMONTAS S; SUBACHYUS L.1977; LITOV. FIZ. SBOR.; S.S.S.R.; DA. 1977; VOL. 17; NO 1; PP. 71-78; ABS. LITU. ANGL.; BIBL. 16 REF.Article

STRUCTURE OF MAGNETOPHONON RESONANCE UNDER HOT ELECTRON CONDITIONS IN INSB.SHIRAKAWA T; ITO M; KASAI K et al.1976; PHYS. LETTERS, A; NETHERL.; DA. 1976; VOL. 58; NO 2; PP. 123-124; BIBL. 4 REF.Article

HOT ELECTRONS IN MOS TRANSISTORS: LATERAL DISTRIBUTION OF THE TRAPPED OXIDE CHARGELOMBARDI C; OLIVO P; RICCO B et al.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 7; PP. 215-217; BIBL. 13 REF.Article

HOT ELECTRON NOISE EFFECTS IN BURIED CHANNEL MOSFETSKIM SK; VAN DER ZIEL A; LIU ST et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 5; PP. 425-428; BIBL. 4 REF.Article

HOT ELECTRONS IN SEMICONDUCTORS IN LONGITUDINAL QUANTIZING MAGNETIC FIELDPINCHUK II.1980; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1980; VOL. 97; NO 1; PP. 355-365; ABS. RUS; BIBL. 19 REF.Article