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THE GROWTH OF BUFFERED GAAS MESFET STRUCTURES BY LPEHOUSTON PA.1980; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1980; VOL. 9; NO 1; PP. 79-93; BIBL. 17 REF.Article

REVIEW. GROWTH AND CHARACTERIZATION OF INGAASP LATTICE-MATCHED TO INPHOUSTON PA.1981; J. MATER. SCI.; ISSN 0022-2461; GBR; DA. 1981; VOL. 16; NO 11; PP. 2935-2961; BIBL. 156 REF.Article

DIFFUSION OF CD AND ZN IN INP BETWEEN 550 AND 650OCCHAND N; HOUSTON PA.1982; JOURNAL OF ELECTRONIC MATERIALS; ISSN 0361-5235; USA; DA. 1982; VOL. 11; NO 1; PP. 37-52; BIBL. 17 REF.Article

ELECTRON DRIFT VELOCITY IN N-GAAS AT HIGH ELECTRIC FIELDS.HOUSTON PA; EVANS AGR.1977; SOLID STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 3; PP. 197-204; BIBL. 16 REF.Article

MN AS A P-TYPE DOPANT IN IN0.53GA0.47AS ON INP SUBSTRATESCHAND N; HOUSTON PA; ROBSON PN et al.1981; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 20; PP. 726-727; BIBL. 8 REF.Article

LPE GROWTH EFFECTS OF INP, IN0.53GA0.47AS, AND IN0.75GA0.25AS0.55P0.45 ON STRUCTURED INP SUBSTRATESCHAND N; SYRBU AV; HOUSTON PA et al.1983; JOURNAL OF CRYSTAL GROWTH; ISSN 0022-0248; NLD; DA. 1983; VOL. 61; NO 1; PP. 53-60; BIBL. 15 REF.Article

GROWTH EFFECTS OF IN0.53 GA0.47 AS ON INP STRUCTURED SUBSTRATESCHAND N; SYRBU AV; HOUSTON PA et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 14; PP. 613-614; BIBL. 3 REF.Article

SINGLE-MODE INGAASP/INP BURIED WAVEGUIDE STRUCTURES GROWN ON CHANNELLED (111)B INP SUBSTRATESBENSON TM; SYRBU AV; CHAND N et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 19; PP. 812-813; BIBL. 3 REF.Article

PHOTOELASTIC OPTICAL DIRECTIONAL COUPLERS IN EPITAXIAL GAAS LAYERSBENSON TM; MUROTANI T; HOUSTON PA et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 6; PP. 237-238; BIBL. 4 REF.Article

A NOVEL ELECTRO-OPTICALLY CONTROLLED DIRECTIONAL-COUPLER SWITCH IN GAAS EPITAXIAL LAYERS AT 1.15 MU MBENSON TM; MUROTANI T; ROBSON PN et al.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 9; PP. 1477-1483; BIBL. 22 REF.Article

Influence of dual-frequency plasma-enhanced chemical-vapor deposition Si3N4 passivation on the electrical characteristics of AlGaN/GaN heterostructure field-effect transistorsTAN, W. S; HOUSTON, Pa; HILL, G et al.Journal of electronic materials. 2004, Vol 33, Num 5, pp 400-407, issn 0361-5235, 8 p.Conference Paper

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