au.\*:("HOVEL, H. J")
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Correlations of photoluminescence with defect densities in semi-insulating gallium arsenideHOVEL, H. J; GUIDOTTI, D.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 11, pp 2331-2338, issn 0018-9383Article
Model for degradation of band-gap photoluminescence in GaAsGUIDOTTI, D; HOVEL, H. J.Applied physics letters. 1988, Vol 53, Num 15, pp 1411-1413, issn 0003-6951Article
High-efficiency Ga1-xAlxAs-GaAs solar cellsWOODALL, J. W; HOVEL, H. J.Solar cells. 1990, Vol 29, Num 2-3, pp 167-172, issn 0379-6787, 6 p.Article
An isothermal etchback-regrowth method for high-efficiency Ga1-xAlxAs-GaAs solar cellsWOODALL, J. M; HOVEL, H. J.Solar cells. 1990, Vol 29, Num 2-3, pp 173-177, issn 0379-6787, 5 p.Article
Degradation of band-gap photoluminescence in GaAsGUIDOTTI, D; HASAN, E; HOVEL, H. J et al.Applied physics letters. 1987, Vol 50, Num 14, pp 912-914, issn 0003-6951Article
Enhanced Schottky barriers produced by recoil implantation of Mg into n-GaAsEIZENBERG, M; CALLEGARI, A. C; SADANA, D. K et al.Applied physics letters. 1989, Vol 54, Num 17, pp 1696-1698, issn 0003-6951, 3 p.Article
Comment on laser-induced degradation of GaAs photoluminescencë. ResponseGUIDOTTI, D; HOVEL, H. J; RAJA, M. Y. A et al.Applied physics letters. 1988, Vol 53, Num 10, pp 927-928, issn 0003-6951Article
300 mm SGOI/Strain-Si for high-performance CMOSREZNICEK, A; BEDELL, S. W; HOVEL, H. J et al.IEEE international SOI conference. 2004, pp 37-38, isbn 0-7803-8497-0, 1Vol, 2 p.Conference Paper
Process damage and contamination effects for shallow Si implanted GaAsBARATTE, H; FLEISCHMAN, A. J; SCILLA, G. J et al.Journal of the Electrochemical Society. 1991, Vol 138, Num 1, pp 219-222, issn 0013-4651Article
Defects and electrical consequences in SOI buried oxidesHOVEL, H. J; ALMONTE, M; LEE, J. D et al.Proceedings - Electrochemical Society. 2003, pp 105-110, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper
Improved Schottky gate characteristics for MOVPE-grown GaAs MESFETsTISCHLER, M. A; LATULIPE, D; KUECH, T. F et al.Journal of crystal growth. 1992, Vol 124, Num 1-4, pp 824-828, issn 0022-0248Conference Paper
Interfacial microstructure of tungsten silicide Schottky contacts to n-type GaAsYIH-CHENG SHIH; CALLEGARI, A; MURAKAMI, M et al.Journal of applied physics. 1988, Vol 64, Num 4, pp 2113-2121, issn 0021-8979Article
