Pascal and Francis Bibliographic Databases

Help

Search results

Your search

au.\*:("HOWER PL")

Results 1 to 12 of 12

  • Page / 1
Export

Selection :

  • and

OPTIMUM DESIGN OF POWER TRANSISTOR SWITCHESHOWER PL.1973; I.E.E.E. TRANS. ELECTRON. DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 4; PP. 426-435; BIBL. 13 REF.Serial Issue

APPLICATION OF A CHARGE-CONTROL MODEL TO HIGH-VOLTAGE POWER TRANSISTORS.HOWER PL.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 8; PP. 863-870; BIBL. 23 REF.Article

SEEING WHERE THE POWER LIESHOWER PL.1980; ELECTRONICS; USA; DA. 1980; VOL. 53; NO 27; PP. 106-110Article

COMPARISON OF ONE- AND TWO-DIMENSIONAL MODELS OF TRANSISTOR THERMAL INSTABILITY.HOWER PL; GOVIL PK.1974; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1974; VOL. 21; NO 10; PP. 617-623; BIBL. 13 REF.Article

EMITTER CURRENT-CROWDING IN HIGH-VOLTAGE TRANSISTORSHOWER PL; EINTHOVEN WG.1978; I.E.E.E. TRANS. ELECTRON. DEVICES; USA; DA. 1978; VOL. 25; NO 4; PP. 465-471; BIBL. 17 REF.Article

CURRENT SATURATION AND SMALL-SIGNAL CHARACTERISTICS OF GAAS FIELD-EFFECT TRANSISTORSHOWER PL; BECHTEL NG.1973; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 3; PP. 213-220; BIBL. 12 REF.Serial Issue

SECOND BREAKDOWN OF TRANSITRORS DURING INDUCTIVE TURNOFFKRISHNA S; HOWER PL.1973; PROC. I.E.E.E.; U.S.A.; DA. 1973; VOL. 61; NO 3; PP. 393-395; BIBL. 2 REF.Serial Issue

A BARRIER MODEL FOR ZNO VARISTORSHOWER PL; GUPTA TK.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 7; PP. 4847-4855; BIBL. 15 REF.Article

COMPARISON OF VARIOUS SOURCE GATE GEOMETRIES FOR POWER MOSFET'SHOWER PL; GEISLER MJ.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 9; PP. 1098-1101; BIBL. 1 REF.Article

CURRENT INSTABILITY PHENOMENA IN ZNO VARISTORS UNDER A CONTINUOUS AC STRESSGUPTA TK; CARLSON WG; HOWER PL et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 6; PP. 4104-4111; BIBL. 21 REF.Article

LOW VOLTAGE ZNO VARISTOR: DEVICE PROCESS AND DEFECT MODELSELIM FA; GUPTA TK; HOWER PL et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 1; PP. 765-768; BIBL. 21 REF.Article

EXPERIMENTAL DEMONSTRATION OF HIGH-POWER FAST-RISE-TIME SWITCHING IN SILICON JUNCTION SEMICONDUCTORS.ZUCKER OSF; LONG JR; SMITH VL et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 4; PP. 261-263; BIBL. 2 REF.Article

  • Page / 1