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SERIES OPERATION OF TRANSFERRED-ELECTRON DEVICES.HOWES MJ.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 23; PP. 626-627; BIBL. 2 REF.Article

CARRIER MOBILITY MEASUREMENTS ON TRANSFERRED ELECTRON DEVICE MATERIALHOWES MJ.1973; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1973; VOL. 15; NO 2; PP. 511-514; ABS. ALLEM.; BIBL. 7 REF.Serial Issue

CONVERSATIONAL AND SOCIAL RESPONSES TO DEPRESSIVE INTERPERSONAL BEHAVIORHOWES MJ; HOKANSON JE.1979; J. ABNORM. PSYCHOL.; USA; DA. 1979; VOL. 88; NO 6; PP. 625-634; BIBL. 16 REF.Article

DOPPLER RADAR MICROWAVE SOURCE DESIGN FOR AUTOMOTIVE BRAKING APPLICATIONS.ROSS RFG; HOWES MJ.1976; J. MICROWAVE POWER; CANADA; DA. 1976; VOL. 11; NO 3; PP. 283-293; BIBL. 13 REF.Article

SIMPLE FORMULAS FOR MICROSTRIP LINES.ROSS RFG; HOWES MJ.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 16; PP. 410; BIBL. 8 REF.Article

ELECTRONIC TUNING OF STABLE TRANSFERRED ELECTRON OSCILLATORS. = ACCORD ELECTRONIQUE DES OSCILLATEURS A TRANSFERT D'ELECTRONS STABLESDEAN M; HOWES MJ.1974; J.E.E.E. TRANS. ELECTRON. DEVICES; U.S.A.; DA. 1974; VOL. 21; NO 9; PP. 563-570; BIBL. 14 REF.Article

SOLID STATE ELECTRONIC DEVICESMORGAN DV; HOWES MJ.1972; LONDON; WYKEHAM PUBL.; DA. 1972; PP. (202 P.); ISBN 0851092403; (WYKEHAM SCI. SER.)Book

CIRCUIT ASPECTS OF THE NOISE PERFORMANCE OF MICROWAVE OSCILLATOR MODULESKENYON ND; HOWES MJ.1980; IEE PROC., PART H; ISSN 0143-7097; GBR; DA. 1980; VOL. 127; NO 4; PP. 235; BIBL. 2 REF.Article

ELECTRICAL CHARACTERISATION OF TRANSFERRED-ELECTRON DEVICES.MCBRETNEY J; HOWES MJ.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 20; PP. 532-533; BIBL. 3 REF.Article

ELECTRICAL CHARACTERIZATION OF TRANSFERRED ELECTRON DEVICES BY A NOVEL GALVANOMAGNETIC TECHNIQUEMCBRETNEY J; HOWES MJ.1979; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; USA; DA. 1979; VOL. 27; NO 3; PP. 256-265; BIBL. 17 REF.Article

J-BAND TRANSFERRED-ELECTRON OSCILLATORSDEAN M; HOWES MJ.1973; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1973; VOL. 21; NO 3; PP. 121-127; BIBL. 14 REF.Serial Issue

A REFLECTION COEFFICIENT APPROACH TO THE DESIGN OF ONE-PORT NEGATIVE IMPEDANCE OSCILLATORSESDALE DJ; HOWES MJ.1981; IEEE TRANS. MICROWARE THEORY TECH.; ISSN 0018-9480; USA; DA. 1981; VOL. 29; NO 8; PP. 770-776; BIBL. 2 REF.Article

LARGE SIGNAL CIRCUIT CHARACTERIZATION OF SOLID-STATE MICROWAVE OSCILLATOR DEVICES.HOWES MJ; JEREMY ML.1974; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1974; VOL. 21; NO 8; PP. 488-499; BIBL. 26 REF.Article

TRANSFERRED-ELECTRON OSCILLATOR DEVICE PLANE MEASUREMENTHOWES MJ; JEREMY ML.1973; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 7; PP. 657-659; BIBL. 5 REF.Serial Issue

INTERDIFFUSION AND DEGRADATION OF SI/CR/PT/AG IMPATT DIODE METALLIZATIONMUKHERJEE SD; MORGAN DV; HOWES MJ et al.1979; J. ELECTROCHEM. SOC.; USA; DA. 1979; VOL. 126; NO 4; PP. 1047-1053; BIBL. 40 REF.Article

CONTACT-DEGRADATION STUDIES ON GAAS TRANSFERRED-ELECTRON DEVICES USING A FOCUSED BACKSCATTERING TECHNIQUE.PALMSTROM CJ; MORGAN DV; HOWES MJ et al.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 17; PP. 504-505; BIBL. 9 REF.Article

A DISCRETE ELEMENT SMALL-SIGNAL EQUIVALENT CIRCUIT FOR WARD-BLASED P+N DIODES CONTAINING DEEP LEVELSSTRONG PJ; MORGAN DV; HOWES MJ et al.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 6; PP. 871-876; BIBL. 20 REF.Article

OUTMIGRATION OF GALLIUM FROM AU-GAAS INTERFACES.MADAMS CJ; MORGAN DV; HOWES MJ et al.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 24; PP. 574-575; BIBL. 6 REF.Article

APPLICATIONS OF MAGNETORESISTANCE MEASUREMENTS IN THE EVALUATION OF TRANSFERRED ELECTRON DEVICE PERFORMANCE.HOWES MJ; MORGAN DV; DEVLIN WJ et al.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 41; NO 1; PP. 117-124; ABS. ALLEM.; BIBL. 13 REF.Article

A THEORETICAL AND EXPERIMENTAL STUDY OF RECOMBINATION IN SILICON P-N JUNCTIONS.ASHBURN P; MORGAN DV; HOWES MJ et al.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 6; PP. 569-577; BIBL. 15 REF.Article

A STUDY OF GEOMETRIC MAGNETORESISTANCE IN TRANSFERRED ELECTRON DIODES USING A NUMERICAL SOLUTION OF THE BOLTZMANN EQUATIONWOOD J; HOWES MJ; MORGAN DV et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 71; NO 1; PP. 207-216; ABS. GER; BIBL. 23 REF.Article

THE EFFECT OF DISLOCATIONS ON THE ELECTRON MOBILITY OF GAASWOOD J; HOWES MJ; MORGAN DV et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 74; NO 2; PP. 493-496; ABS. GER; BIBL. 7 REF.Article

SCHOTTKY BARRIER IMPEDANCE MEASUREMENTS AT UHFDYER GR; HOWES MJ; MORGAN DV et al.1980; IEEE TRANS. MICROWAVE THEORY TECH.; ISSN 0018-9480; USA; DA. 1980; VOL. 28; NO 4; PP. 429-430; BIBL. 8 REF.Article

RADIATION-INDUCED DEGRADATION OF OHMIC CONTACTS.BLUNDELL R; MORGAN DV; HOWES MJ et al.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 16; PP. 483-484; BIBL. 5 REF.Article

THE EFFECTS OF RADIATION-INDUCED DEEP LEVELS ON THE ADMITTANCE OF P+N DIODES UNDER FORWARD BIAS.STRONG PJ; HOWES MJ; MORGAN DV et al.1977; RAD. EFFECTS; G.B.; DA. 1977; VOL. 34; NO 4; PP. 241-245; BIBL. 10 REF.Article

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