CONVERSATIONAL AND SOCIAL RESPONSES TO DEPRESSIVE INTERPERSONAL BEHAVIORHOWES MJ; HOKANSON JE.1979; J. ABNORM. PSYCHOL.; USA; DA. 1979; VOL. 88; NO 6; PP. 625-634; BIBL. 16 REF.Article

DOPPLER RADAR MICROWAVE SOURCE DESIGN FOR AUTOMOTIVE BRAKING APPLICATIONS.ROSS RFG; HOWES MJ.1976; J. MICROWAVE POWER; CANADA; DA. 1976; VOL. 11; NO 3; PP. 283-293; BIBL. 13 REF.Article

SIMPLE FORMULAS FOR MICROSTRIP LINES.ROSS RFG; HOWES MJ.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 16; PP. 410; BIBL. 8 REF.Article

ELECTRONIC TUNING OF STABLE TRANSFERRED ELECTRON OSCILLATORS. = ACCORD ELECTRONIQUE DES OSCILLATEURS A TRANSFERT D'ELECTRONS STABLESDEAN M; HOWES MJ.1974; J.E.E.E. TRANS. ELECTRON. DEVICES; U.S.A.; DA. 1974; VOL. 21; NO 9; PP. 563-570; BIBL. 14 REF.Article

SOLID STATE ELECTRONIC DEVICESMORGAN DV; HOWES MJ.1972; LONDON; WYKEHAM PUBL.; DA. 1972; PP. (202 P.); ISBN 0851092403; (WYKEHAM SCI. SER.)Book

ELECTRICAL CHARACTERIZATION OF TRANSFERRED ELECTRON DEVICES BY A NOVEL GALVANOMAGNETIC TECHNIQUEMCBRETNEY J; HOWES MJ.1979; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; USA; DA. 1979; VOL. 27; NO 3; PP. 256-265; BIBL. 17 REF.Article

J-BAND TRANSFERRED-ELECTRON OSCILLATORSDEAN M; HOWES MJ.1973; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1973; VOL. 21; NO 3; PP. 121-127; BIBL. 14 REF.Serial Issue

INTERDIFFUSION AND DEGRADATION OF SI/CR/PT/AG IMPATT DIODE METALLIZATIONMUKHERJEE SD; MORGAN DV; HOWES MJ et al.1979; J. ELECTROCHEM. SOC.; USA; DA. 1979; VOL. 126; NO 4; PP. 1047-1053; BIBL. 40 REF.Article

CONTACT-DEGRADATION STUDIES ON GAAS TRANSFERRED-ELECTRON DEVICES USING A FOCUSED BACKSCATTERING TECHNIQUE.PALMSTROM CJ; MORGAN DV; HOWES MJ et al.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 17; PP. 504-505; BIBL. 9 REF.Article

A DISCRETE ELEMENT SMALL-SIGNAL EQUIVALENT CIRCUIT FOR WARD-BLASED P+N DIODES CONTAINING DEEP LEVELSSTRONG PJ; MORGAN DV; HOWES MJ et al.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 6; PP. 871-876; BIBL. 20 REF.Article

OUTMIGRATION OF GALLIUM FROM AU-GAAS INTERFACES.MADAMS CJ; MORGAN DV; HOWES MJ et al.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 24; PP. 574-575; BIBL. 6 REF.Article

A STUDY OF GEOMETRIC MAGNETORESISTANCE IN TRANSFERRED ELECTRON DIODES USING A NUMERICAL SOLUTION OF THE BOLTZMANN EQUATIONWOOD J; HOWES MJ; MORGAN DV et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 71; NO 1; PP. 207-216; ABS. GER; BIBL. 23 REF.Article

THE EFFECT OF DISLOCATIONS ON THE ELECTRON MOBILITY OF GAASWOOD J; HOWES MJ; MORGAN DV et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 74; NO 2; PP. 493-496; ABS. GER; BIBL. 7 REF.Article

SCHOTTKY BARRIER IMPEDANCE MEASUREMENTS AT UHFDYER GR; HOWES MJ; MORGAN DV et al.1980; IEEE TRANS. MICROWAVE THEORY TECH.; ISSN 0018-9480; USA; DA. 1980; VOL. 28; NO 4; PP. 429-430; BIBL. 8 REF.Article

RADIATION-INDUCED DEGRADATION OF OHMIC CONTACTS.BLUNDELL R; MORGAN DV; HOWES MJ et al.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 16; PP. 483-484; BIBL. 5 REF.Article

THE EFFECTS OF RADIATION-INDUCED DEEP LEVELS ON THE ADMITTANCE OF P⁺N DIODES UNDER FORWARD BIAS.STRONG PJ; HOWES MJ; MORGAN DV et al.1977; RAD. EFFECTS; G.B.; DA. 1977; VOL. 34; NO 4; PP. 241-245; BIBL. 10 REF.Article

ELECTROFORMING AND DIELECTRIC BREAKDOWN IN THIN ALUMINIUM OXIDE FILMSMORGAN DV; HOWES MJ; POLLARD RD et al.1973; THIN SOLID FILMS; NETHERL.; DA. 1973; VOL. 15; NO 1; PP. 123-131; BIBL. 16 REF.Serial Issue

NOISE REDUCTION IN TRANSFERRED ELECTRON OSCILLATOR MODULESHOWES MJ; MORGAN DV; BLUNDELL R et al.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 3; PP. 237-238; BIBL. 7 REF.Article

INTERDIFFUSION OF METALLIC CONTACT LAYERS ON SILICON IMPATT DIODES.MORGAN DV; HOWES MJ; TAYLOR DJ et al.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 21; PP. 547-548; BIBL. 6 REF.Article