ROOM-TEMPERATURE OPERATION OF GAINASP/INP DOUBLE-HETEROSTRUCTURE DIODE LASERS EMITTING AT 1.1 MU M.HSIEH JJ.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 5; PP. 283-285; BIBL. 12 REF.Article

THICKNESS AND SURFACE MORPHOLOGY OF GAAS LPE LAYERS GROWN BY SUPERCOOLING, STEPCOOLING, EQUILIBRIUM-COOLING, AND TWO-PHASE SOLUTION TECHNIQUES.HSIEH JJ.1974; J. CRYST. GROWTH; NETHERL.; DA. 1974; VOL. 27; PP. 49-61; BIBL. 20 REF.Article

MEASURED COMPOSITIONS AND LASER EMISSION WAVELENGTHS OF GA_XIN_1-XAS_YP_1-Y LPE LAYERS LATTICE-MATCHED TO INP SUBSTRATES.HSIEH JJ.1978; J. ELECTRON. MATER.; U.S.A.; DA. 1978; VOL. 7; NO 1; PP. 31-37; BIBL. 1 P. 1/2Article

ROOM-TEMPERATURE CW OPERATION OF BURIED-STRIPE DOUBLE-HETEROSTRUCTURE GAINASP/INP DIODE LASERS.HSIEH JJ; SHEN CC.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 30; NO 8; PP. 429-431; BIBL. 3 REF.Article

GAAS: SI DOUBLE-HETEROSTRUCTURE LED'S.HSIEH JJ; ROSSI JA.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 4; PP. 1834-1838; BIBL. 16 REF.Article

HIGH-EFFICIENCY INP HOMOJUNCTION SOLAR CELLSTURNER GW; FAN JCC; HSIEH JJ et al.1980; APPL. PHYS. LETTERS; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 4; PP. 400-402; BIBL. 14 REF.Article

INDIUM PHOSPHIDE HOMOJUNCTION SOLAR CELLSTURNER GW; FAN JCC; HSIEH JJ et al.1980; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 1980. 14/1980/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1980; PP. 351-353; BIBL. 15 REF.Conference Paper

00-HOUR CONTINUOUS CW OPERATION OF DOUBLE-HETEROSTRUCTURE GAINASP/INP LASERS.SHEN CC; HSIEH JJ; LIND TA et al.1977; IN: OPT. FIBER TRANSM. II. TOP. MEET.; WILLIAMSBURG, VA.; 1977; S.L.; OPT. SOC. AM.; DA. 1977; PP. (4P.); BIBL. 1 REF.Conference Paper

ROOM-TEMPERATURE CW OPERATION OF GAINASP/INP DOUBLE-HETEROSTRUCTURE DIODE LASERS EMITTING AT 1.1 MU M.HSIEH JJ; ROSSI JA; DONNELLY JP et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 12; PP. 709-711; BIBL. 16 REF.Article

INTEGRATED GAAS-ALGAAS DOUBLE-HETEROSTRUCTURE LASERS.HURWITZ CE; ROSSI JA; HSIEH JJ et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 4; PP. 241-243; BIBL. 15 REF.Article

SELF-SUSTAINED PULSATIONS IN GAINASP DIODE LASERSWALPOLE JN; LIND TA; HSIEH JJ et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 4; PP. 240-242; BIBL. 16 REF.Article

INTRACAVITY LOSS MODULATION OF GAINASP DIODE LASERSTSANG DZ; WALPOLE JN; GROVES SH et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 3; PP. 120-122; BIBL. 10 REF.Article

The contingent effect of personal IT innovativeness and IT self-efficacy on innovative use of complex ITWEI WANG; XIXI LI; HSIEH, Jj Po-An et al.Behaviour & information technology (Print). 2013, Vol 32, Num 10-12, pp 1105-1124, issn 0144-929X, 20 p.Article