Charges in HFO₂ ALD gate dielectricsBERSUKER, G; ZEITZOFF, P. M; HUFF, H. R et al.Proceedings - Electrochemical Society. 2003, pp 417-422, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

N incorporation into ALD HfO₂ gate dielectric using ion implantationLI, H.-J; POMPL, T; PRICE, J et al.DRC : Device research conference. 2004, pp 15-16, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

Experimental observations of the thermal stability of high-k gate dielectric materials on siliconLYSAGHT, P. S; CHEN, P. J; BERGMANN, R et al.Journal of non-crystalline solids. 2002, Vol 303, Num 1, pp 54-63, issn 0022-3093Conference Paper

Plasma nitridation of very thin gate dielectricsAL-SHAREEF, H. N; BERSUKER, G; LIM, C et al.Microelectronic engineering. 2001, Vol 59, Num 1-4, pp 317-322, issn 0167-9317Conference Paper

Measurement of silicon particles by laser surface scanning and angle-resolved light scatteringHUFF, H. R; GOODALL, R. K; STOVER, J et al.Journal of the Electrochemical Society. 1997, Vol 144, Num 1, pp 243-250, issn 0013-4651Article

Properties of the interfacial layer in the high-k gate stack and transistor performanceBERSUKER, G; PETERSON, J; BAMETT, J et al.Proceedings - Electrochemical Society. 2005, pp 141-145, issn 0161-6374, isbn 1-56677-463-2, 5 p.Conference Paper

Growing pain : Material and metrology challenges for the transition to 300 mm wafersHUFF, H. R; GOODALL, R. K.The Electrochemical Society interface. 1996, Vol 5, Num 2, pp 31-35, issn 1064-8208Article

Interpretation of carrier recombination lifetime and diffusion length measurements in siliconBULLIS, W. M; HUFF, H. R.Journal of the Electrochemical Society. 1996, Vol 143, Num 4, pp 1399-1405, issn 0013-4651Article