THE NEGATIVE ROLE OF THE FAST ELECTRONS IN THE MICROWAVE OXIDATION OF SILICONBARDOS L; MUSIL J; ZACEK F et al.1978; CZECHOSL. J. PHYS.; CSK; DA. 1978; VOL. 28; NO 6; PP. 639-643; BIBL. 7 REF.Article

COMPARISON OF OXIDES PREPARED IN CW AND PULSE MICROWAVE PLASMAMUSIL J; BARDOS L; HULENYI L et al.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 61; NO 2; PP. 631-634; ABS. RUS; BIBL. 6 REF.Article

Determination of the depth of shallow implanted p⁺-n junctions by the four-point probe methodKINDER, R; HULENYI, L; MIKA, F et al.Physica status solidi. A. Applied research. 1996, Vol 157, Num 2, pp 393-398, issn 0031-8965Article

Improved determination of phosphorus contamination during ion implantation by SRP and simulationsKURUC, M; HULENYI, L; KINDER, R et al.Applied surface science. 2009, Vol 255, Num 18, pp 8110-8114, issn 0169-4332, 5 p.Article