Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("HYDROGENE ION ATOMIQUE")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Origin

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 3277

  • Page / 132

Export

Selection :

  • and

LOW-ENERGY PROTON IMPLANTATION OF STAINLESS STEEL.WILSON KL; THOMAS GJ; BAUER W et al.1976; NUCL. TECHNOL.; U.S.A.; DA. 1976; VOL. 29; NO 3; PP. 322-326; BIBL. 6 REF.Article

DECHANNELING OF 6-MEV PROTONS IN A TUNGSTEN SINGLE CRYSTALRUDNEV AS; ROSLYAKOV VI; SIROTININ EI et al.1976; PHYS. LETTERS, A; NETHERL; DA. 1976; VOL. 57; NO 3; PP. 287-288; BIBL. 5 REF.Article

PRODUCTION AND BEAM ANNEALING OF DAMAGE IN CARBON IMPLANTED SILICON. II.KOOL WH; ROOSENDAAL HE; WIGGERS LW et al.1978; RAD. EFFECTS; G.B.; DA. 1978; VOL. 36; NO 1-2; PP. 41-48; BIBL. 15 REF.Article

DEPTH PROFILE ANALYSIS OF PROTON DAMAGE BY CHANNELING.NASHIYAMA I.1978; PHYS. REV., B; U.S.A.; DA. 1978; VOL. 17; NO 1; PP. 104-110; BIBL. 18 REF.Article

DETERMINATION OF RANDOM AND ALIGNED STOPPING POWERS FOR 80-300 KEV PROTONS IN SILICON BY BACK-SCATTERING MEASUREMENTS.CEMBALI F; ZIGNANI F.1977; RAD. EFFECTS; G.B.; DA. 1977; VOL. 31; NO 3; PP. 169-173; BIBL. 10 REF.Article

DEPTH PROFILES OF IMPLANTED H AND HE IN METAL MO DETERMINED WITH BACKSCATTERED PROTONSOKUDA S; KIMURA T; AKIMUNE H et al.1979; JAP. J. APPL. PHYS.; JPN; DA. 1979; VOL. 18; NO 3; PP. 465-469; BIBL. 13 REF.Article

ENERGY LOSS OF LOW ENERGY PROTONS CHANNELING IN SILICON CRYSTALS.MELVIN JD; TOMBRELLO TA.1975; RAD. EFFECTS; G.B.; DA. 1975; VOL. 26; NO 1-2; PP. 113-126; BIBL. 16 REF.Article

COMPARISON OF CALCULATIONAL METHODS FOR STRAGGLING IN THIN ABSORBERS.BICHESEL H; SAXON RP.1975; PHYS. REV., A; U.S.A.; DA. 1975; VOL. 11; NO 4; PP. 1286-1296; BIBL. 31 REF.Article

ENDOR OF TRAPPED HYDROGEN ATOMS IN GAMMA-IRRADIATED GLASSY ACID MATRICES AND IN POLYCRYSTALLINE OXYANION MATRICESHELBERT J; KEVAN L.1973; J. CHEM. PHYS.; U.S.A.; DA. 1973; VOL. 58; NO 3; PP. 1205-1212; BIBL. 17 REF.Serial Issue

INTERPRETATION PAR DIFFUSION DES EFFETS ACCOMPAGNANT LA TRANSMISSION DE PROTONS A TRAVERS DES CRISTAUXGEGUZIN YA E; FAJNSHTEJN AL; MARKUS AM et al.1974; ZH. EKSPER. TEOR. FIZ.; S.S.S.R.; DA. 1974; VOL. 67; NO 4; PP. 1484-1490; ABS. ANGL.; BIBL. 10 REF.Article

EFFICACITE DE LA PENETRATION DES FAISCEAUX DE PARTICULES ULTRARELATIVISTES PAR UN OBSTACLE CRISTALLINTARATIN AM; VOROB'EV SA.1981; Z. TEH. FIZ.; ISSN 0044-4642; SUN; DA. 1981; VOL. 51; NO 1; PP. 228-230; BIBL. 8 REF.Article

ON THE INFLUENCE OF THE INITIAL ROW IMPACT PARAMETER AND THE ROW PERIODICITY ON AN ION'S DECHANNELLING.PABST HJ.1975; RAD. EFFECTS; G.B.; DA. 1975; VOL. 24; NO 4; PP. 233-237; BIBL. 17 REF.Article

APPAREILLAGE EXPERIMENTAL POUR L'ETUDE DES EFFETS D'ORIENTATION LORS D'UNE CANALISATION DES PROTONSKARANDASHOV VG; RUDNEV AS; SIROTININ EI et al.1975; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1975; NO 2; PP. 204-207; BIBL. 5 REF.Article

THE PREDICTED 1S2-1S 6P H- AUTO-IONIZATION RESONANCE OBSERVED AS A DIFFUSE INTERSTELLAR LINE AT 7581 AGAMMELGAARD P; RUDKJOBING M.1980; ASTROPHYS. SPACE SCI.; ISSN 0004-640X; NLD; DA. 1980; VOL. 72; NO 2; PP. 319-322; BIBL. 6 REF.Article

CORRELATION OF PROTON DAMAGE OF SILICON WITH NEUTRON AND ELECTRON DAMAGE.COLWELL JF.1975; RAD. EFFECTS; G.B.; DA. 1975; VOL. 24; NO 4; PP. 239-245; BIBL. 14 REF.Article

CRITICAL ANGLES AND MINIMUM YIELDS FOR PLANAR CHANNELING.ROOSENDAAL HE; KOOL WH; VAN DER WEG WF et al.1974; RAD. EFFECTS; G.B.; DA. 1974; VOL. 22; NO 2; PP. 89-99; BIBL. 13 REF.Article

INTERACTION DANS LE SILICIUM DES ATOMES D'HYDROGENE AVEC LES DEFAUTS IMPLANTES PAR BOMBARDEMENT IONIQUEVIKHREV BI; GERASIMENKO NN; DVURECHENSKIJ AV et al.1974; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1974; VOL. 8; NO 7; PP. 1345-1348; BIBL. 9 REF.Article

PROTON CHANNELING IN NACL SIMULATION OF CHANNELING AND X-RAY EXCITATION.ROTH S; SIZMANN R.1973; RAD. EFFECTS; G.B.; DA. 1973; VOL. 20; NO 1-2; PP. 43-53; BIBL. 40 REF.Article

INELASTIC SCATTERING IN SLOW-ION SURFACE-CHANNELING AND SURFACE DEBYE TEMPERATURE.WAHO T; KITAGAWA M; OHTSUKI YH et al.1974; PHYS. REV., B; U.S.A.; DA. 1974; VOL. 10; NO 11; PP. 4568-4571; BIBL. 7 REF.Article

ETUDE AU MOYEN D'UN APPAREIL DE DIFFRACTION DE PROTONS "PROMISS" DES REGIONS DESORDONNEES DU RESEAU CRISTALLIN DU SILICIUM FORMEES PAR DOPAGE DE CELUI-CI PAR LES IONS B+DENISOV VG; KOVALEV GG; SHCHUCHINSKIJ YA M et al.1979; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1979; VOL. 13; NO 6; PP. 1208-1210; BIBL. 7 REF.Article

IONIZATION LOSS OF CHANNELED 1,35-GEV/C PROTONS AND PIONS.FICH O; GOLOVCHENKO JA; NIELSEN KO et al.1976; PHYS. REV. LETTERS; U.S.A.; DA. 1976; VOL. 36; NO 21; PP. 1245-1249; BIBL. 6 REF.Article

NEW PRECISION TECHNIQUE FOR MEASURING THE CONCENTRATION VERSUS DEPTH OF HYDROGEN IN SOLIDS.LANFORD WA; TRAUTVETTER HP; ZIEGLER JF et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 9; PP. 566-568; BIBL. 6 REF.Article

DISPOSITIF PHOTOENREGISTREUR POUR L'ETUDE DES EFFETS D'ORIENTATION LORS D'UNE CANALISATION DES PROTONSARKHIPOVICH VA; KOLYADA VM; DENISOV VG et al.1975; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1975; NO 2; PP. 202-204; BIBL. 8 REF.Article

PROTON IMPLANTATION ISOLATION FOR MICROWAVE MONOLITHIC CIRCUITSESFANDIARI R; FENG M; KANBER H et al.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 2; PP. 29-31; BIBL. 8 REF.Article

TEMPERATURE DEPENDENCE OF TRANSMISSION PROTON CHANNELING IN AG+.BERLINER R; KOEHLER JS.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 12; NO 9; PP. 3559-3574; BIBL. 38 REF.Article

  • Page / 132