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kw.\*:("HYDRURE SILICIUM")

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SI(111): SIH3. A SIMPLE NEW SURFACE PHASE.PANDEY KC; SAKURAI T; HAGSTRUM HD et al.1975; PHYS. REV. LETTERS; U.S.A.; DA. 1975; VOL. 35; NO 25; PP. 1728-1731; BIBL. 14 REF.Article

SILICON VALENCE BAND AUGER SPECTRUM: A CLUSTER APPROACHDE MEYER G; HOOGEWIJS R; LAMBRECHT W et al.1980; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1980; VOL. 33; NO 3; PP. 267-272; BIBL. 9 REF.Article

INFRARED VIBRATIONAL SPECTRA OF RF-SPUTTERED HYDROGENATED AMORPHOUS SILICONFREEMAN EC; PAUL W.1978; PHYS. REV., B; USA; DA. 1978; VOL. 18; NO 8; PP. 4288-4300; BIBL. 38 REF.Article

STRUCTURAL INTERPRETATION OF THE VIBRATIONAL SPECTRA OF A SI:H ALLOYSLUCOVSKY G; NEMANICH RJ; KNIGHTS JC et al.1979; PHYS. REV., B; USA; DA. 1979; VOL. 19; NO 4; PP. 2064-2073; BIBL. 29 REF.Article

R.F. PLASMA DEPOSITION OF AMORPHOUS SILICON FILMS FROM SICL4-H2BRUNO G; CAPEZZUTO P; CRAMAROSSA F et al.1980; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1980; VOL. 67; NO 1; PP. 103-107; BIBL. 10 REF.Article

THEORETICAL STUDIES OF ELECTRONIC STATES PRODUCED BY HYDROGENATION OF AMORPHOUS SILICONCHING WY; LAM DJ; LIN CC et al.1979; PHYS. REV. LETTERS; USA; DA. 1979; VOL. 42; NO 12; PP. 805-808; BIBL. 14 REF.Article

VACANCIES AND THE CHEMICAL TRAPPING OF HYDROGEN IN SILICONSTEIN HJ.1979; PHYS. REV. LETT.; USA; DA. 1979; VOL. 43; NO 14; PP. 1030-1033; BIBL. 10 REF.Article

BRILLOUIN SCATTERING FROM HYDROGENATED AMORPHOUS SILICON.GRIMSDITCH M; SENN W; WINTERLING et al.1978; SOLID STATE COMMUNIC.; GBR; DA. 1978; VOL. 26; NO 4; PP. 229-233; BIBL. 19 REF.Article

INFRARED AND RAMAN SPECTRA OF THE SILICON-HYDROGEN BONDS IN AMORPHOUS SILICON PREPARED BY GLOW DISCHARGE AND SPUTTERING.BRODSKY MH; CARDONA M; CUOMO JJ et al.1977; PHYS. REV., B; U.S.A.; DA. 1977; VOL. 16; NO 8; PP. 3556-3571; BIBL. 52 REF.Article

RAMAN SCATTERING IN PURE AND HYDROGENATED AMORPHOUS GERMANIUM AND SILICONBERMEJO D; CARDONA M.1979; J. NON-CRYST. SOLIDS; NLD; DA. 1979; VOL. 32; NO 1-3; PP. 405-419; BIBL. 26 REF.Article

EXPERIMENTAL DETERMINATION OF THE COMPONENTS OF DIAMAGNETISM IN AMORPHOUS SILICON.CANDEA RM; HUDGENS SJ; KASTNER M et al.1978; PHILOS. MAG., B; G.B.; DA. 1978; VOL. 37; NO 1; PP. 119-126; BIBL. 16 REF.Article

NMR DIRECT DETECTION OF TUNNEL SPLITTINGS IN SOLID SIH4.VAN HECKE P; JANSSENS G.1978; PHYS. REV., B; U.S.A.; DA. 1978; VOL. 17; NO 5; PP. 2124-2128; BIBL. 16 REF.Article

DEFECTS IN PLASMA-DEPOSITED A-SI:HKNIGHTS JC; LUCOVSKY G; NEMANICHI RJ et al.1979; J. NON-CRYST. SOLIDS; NLD; DA. 1979; VOL. 32; NO 1-3; PP. 393-403; BIBL. 13 REF.Article

ELECTRICAL CONDUCTIVITY IN AMORPHOUS SI(O OR H)-AU FILMSHAUSER JJ.1980; SOLID STATE COMMUN.; USA; DA. 1980; VOL. 34; NO 5; PP. 321-324; BIBL. 12 REF.Article

THEORETICAL MODELS FOR THE ELECTRONIC STRUCTURES OF HYDROGENATED AMORPHOUS SILICONJOHNSON KH; KOLARI HJ; DE NEUFVILLE JP et al.1980; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1980; VOL. 21; NO 2; PP. 643-647; BIBL. 25 REF.Article

PHOTOELECTRON SPECTRA OF HYDROGENATED AMORPHOUS SILICON.VON ROEDERN B; LEY L; CARDONA M et al.1977; PHYS. REV. LETTERS; U.S.A.; DA. 1977; VOL. 39; NO 24; PP. 1576-1580; BIBL. 22 REF.Article

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