Entwicklungstendenzen von Kameras auf der Basis von Festkoerperbildsensorelementen = Development trends of cameras with solid state image sensorsHECHT, S.Messen, steuern, regeln. 1987, Vol 36, Num 3, pp 102-103, issn 0026-0347Article

Microtransducer for the concentration of chloride ions in electrolyte solutionsZHUKOVA, T.V; ORLOV, K.V; PODLEPETSKIJ, B.I et al.Zavodskaâ laboratoriâ. 1984, Vol 50, Num 8, pp 18-21, issn 0321-4265Article

Integrating Ormosil films onto microstructured semiconductor substratesOMBABA, Matthew M; LOGEESWARAN, V. J; IONESCU, Adrian et al.Acta materialia. 2014, Vol 72, pp 159-166, issn 1359-6454, 8 p.Article

Quantitative electromechanical characterization of materials using conductive ceramic tipsSPROUSTER, D. J; RUFFELL, S; BRADBY, J. E et al.Acta materialia. 2014, Vol 71, pp 153-163, issn 1359-6454, 11 p.Article

Recursion method with plane wave basis for band structure calculations = Rekursionsmethode mit ebenen Wellen als Basis fuer BandstrukturberechnungenBRUESTEL, U; UNGER, K.Physica status solidi. B. Basic research. 1984, Vol 123, Num 1, pp 229-236, issn 0370-1972Article

On the formation of Si nanowires by molecular beam epitaxyWERNER, Peter; ZAKHAROV, Nikolai D; GERTH, Gerhard et al.International journal of materials research. 2006, Vol 97, Num 7, pp 1008-1015, issn 1862-5282, 8 p.Article

Einführung in die Elektronik bei Schweissstromquellen. Halbleiter: was sind das? = Notions d'électronique appliquée aux sources de courant de soudage. Les semi-conducteurs = Basic electronics for welding power sources. Semi-conductorsWINTER, U; GABELMANN, V.Der Praktiker (Dusseldorf). 1987, Vol 39, Num 1, pp 9-10, issn 0554-9965Article

Technologische Ausruestungen fuer die Drahtkontaktierung von Halbleiterchips = Technological equipment for wire bonding of semiconductor chipsBARTSCH, P; RUDOLF, F; WEIHMANN, R et al.Feingerätetechnik. 1986, Vol 35, Num 5, pp 218-222, issn 0014-9683Article

Properties of Frenkel defectsSCHILLING, W.Journal of nuclear materials. 1994, Vol 216, pp 45-48, issn 0022-3115Conference Paper

Multipole plasmon modes at the surface of a conducting solidQUINN, J. J.Solid state communications. 1992, Vol 84, Num 1-2, pp 139-141, issn 0038-1098Article

Technival note : materials : the economic implicationsMARCUM, J. M.International journal of materials & product technology. 1990, Vol 5, Num 2, pp 191-195, issn 0268-1900Article

The effects of polarization potential and concentration of hydrochloric acid on the photopotential of passive films formed on titanium in hydrochloric acid solutionHARA, M; SHINATA, Y.Corrosion science. 1990, Vol 31, pp 691-696, issn 0010-938XConference Paper

Studies of the deep levels in p-type InSb under pressure = Studien der tiefen Niveaus in p-InSb unter DruckALADASHVILI, D.I; KONCZEWICZ, L; POROWSKI, S et al.Physica status solidi. A. Applied research. 1984, Vol 86, Num 1, pp 301-308, issn 0031-8965Article

Check on the impurity distribution in semiconductors by measurement of the C-V characteristics of MOS structures at low temperaturesBELENOV, K.V; KONTSEVOI, Yu.A; PAVLOVA, Z.V et al.Zavodskaâ laboratoriâ. 1984, Vol 50, Num 8, pp 44-47, issn 0321-4265Article

Optoelektronik in der Messtechnik = Utilization of the opto-electronics for the measuring techniquesHANTKE, D.Feingerätetechnik. 1981, Vol 30, Num 4, pp 163-166, issn 0014-9683Article

Morphological transformation of a crystal―melt interface during unidirectional growth of siliconFUJIWARA, K; GOTOH, R; YANG, X. B et al.Acta materialia. 2011, Vol 59, Num 11, pp 4700-4708, issn 1359-6454, 9 p.Article

Conductivity in mineralsTribology & lubrication technology. 2008, Vol 64, Num 7, pp 14-15, issn 1545-858X, 2 p.Article

The use of amorphous and microcrystalline silicon for silicon heterojunction bipolar transistors = Die Verwendung von amorphem und mikrokristallinem Silizium fuer Hetero-Uebergangs-BipolartransistorenSYMONS, J; GHANNAM, M; NIJS, J et al.Applied physics. A, Solids and surfaces. 1986, Vol 41, Num 4, pp 291-295, issn 0721-7250Article

Thermodynamic properties and defect structure of semiconducting compound phases:Tin telluride = Thermodynamische Eigenschaften und Defektstruktur von halbleitenden VerbindungenLIN, J.C; NGAI, T.L; CHANG, Y.A et al.Metallurgical transactions. A, Physical metallurgy and materials science. 1986, Vol 17A, Num 7, pp 1241-1245, issn 0360-2133Article

A power source for resistance welding at high frequency = Source de courant pour le soudage par résistance à haute fréquenceVINOGRADOV, G. V.Welding Production. 1985, Vol 32, Num 1, pp 31-32, issn 0043-230XArticle

High-temperature camera for in situ examination of semiconductor crystals by X-ray topographySMOLSKIJ, I.L; DILBARYAN, G.A; ROZHANSKIJ, V.N et al.Zavodskaâ laboratoriâ. 1984, Vol 50, Num 5, pp 465-467, issn 0321-4265Article

Laser alloyed tin layers on GaAs = Dépôt de Sn sur GaAs et formation d'alliages sous action laserSHAHID, M. A; TOPHAM, P. J; SEALY, B. J et al.Journal of materials science. 1984, Vol 19, Num 7, pp 2361-2367, issn 0022-2461Article

Dosage fluorimétrique du gallium avec la salicyl aldéhyde thiosemicarbazone dans des matériaux techniques et naturelsSTOLYAROV, K. P; KONDRATENOK, B. M; GRIGOR'EV, N. N et al.Žurnal analitičeskoj himii. 1984, Vol 39, Num 2, pp 290-294, issn 0044-4502Article

Checking the thickness of silicon epitaxial layersMALYSHEV, V.A; REZVYI, R.R; ARTEMEVA, Z.V et al.Zavodskaâ laboratoriâ. 1984, Vol 50, Num 9, pp 31-34, issn 0321-4265Article

Attraction of semiconductor nanowires: An in situ observationBIN CHEN; QIANG GAO; LI CHANG et al.Acta materialia. 2013, Vol 61, Num 19, pp 7166-7172, issn 1359-6454, 7 p.Article