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Effect of inversion on barrier height in a metal-SiO2-Si tunnel systemDAW, A. N; CHATTOPADHYAY, P.Solid-state electronics. 1984, Vol 27, Num 12, pp 1057-1060, issn 0038-1101Article

Protein folding rates correlate with heterogeneity of folding mechanismÖZTOP, B; EJTEHADI, M. R; PLOTKIN, S. S et al.Physical review letters. 2004, Vol 93, Num 20, pp 208105.1-208105.4, issn 0031-9007Article

Characteristics of the RuO2-n-GaAs Schottky barrierVANDENBROUCKE, D. A; VAN MEIRHAEGHE, R. L; LAFLERE, W. H et al.Journal of physics. D, Applied physics (Print). 1985, Vol 18, Num 4, pp 731-738, issn 0022-3727Article

Effect of surface states on the barrier height in a MIS diode in the presence of inversionCHATTORADHYAY, P; DAW, A. N.International journal of electronics. 1985, Vol 58, Num 5, pp 775-779, issn 0020-7217Article

Simple approximate formulae for the magnetic relaxation time of single domain ferromagnetic particles with uniaxial anisotropyCOFFEY, W. T; CREGG, P. J; CROTHERS, D. S. F et al.Journal of magnetism and magnetic materials. 1994, Vol 131, Num 3, pp L301-L303, issn 0304-8853Article

Numerical study of the decay of photovoltage at metal-semiconductor interfacesCHEN, T. P; AU, H. L; LEE, T. C et al.Solid state communications. 1993, Vol 87, Num 12, pp 1163-1167, issn 0038-1098Article

Optimal barrier height for Schottky diode rectifiersASHOK, S.International journal of electronics. 1984, Vol 57, Num 3, pp 429-431, issn 0020-7217Article

Controlled low barrier height n+-InGaAs/n-GaAs pseudomorphic heterojunction Schottky diodesKLEINSASSER, A. W; WOODALL, J. M; PETTIT, G. D et al.Applied physics letters. 1985, Vol 46, Num 12, pp 1168-1170, issn 0003-6951Article

Schottky-barrier-height engineering for strained-Si MOSFETsIKEDA, Keiji; YAMASHITA, Yoshimi; ENDOH, Akira et al.DRC : Device research conference. 2004, pp 111-112, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

Local investigation of grain boundaries by grain-boundary EBICPALM, J; ALEXANDER, H.Physica status solidi. A. Applied research. 1993, Vol 138, Num 2, pp 639-648, issn 0031-8965Conference Paper

Etude des propriétés électro-optiques de la structure oxyde/nitrure/oxyde (O.N.O.) : application aux mémoires EPROM et EEPROMEl Ghalbzouri, Hassan; Balland, Bernard.1988, 287 p.Thesis

The influence of a HF and an annealing treatment on the barrier height of p- and n-type Si MIS structuresHANSELAER, P. L; LAFLERE, W. H; VAN MEIRHAEGHE, R. L et al.Applied physics. A, Solids and surfaces. 1986, Vol 39, Num 2, pp 129-133, issn 0721-7250Article

Analysis of junction-barrier-controlled Schottky (JBS) rectifier characteristicsBALIGA, B. J.Solid-state electronics. 1985, Vol 28, Num 11, pp 1089-1093, issn 0038-1101Article

Is the barrier height of exciton self-trapping evaluated so far correct? Quantum mechanical reevaluationSUMI, H.Journal of the Physical Society of Japan. 1984, Vol 53, Num 10, pp 3512-3519, issn 0031-9015Article

THEORY OF TRIANGULAR-BARRIER BULK UNIPOLAR DIODES INCLUDING MINORITY-CARRIER EFFECTSHABIB SED; BOARD K.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 2; PP. 90-96; BIBL. 8 REF.Article

High-barrier Schottky diodes on p-type silicon due to dry-etching damageMU, X. C; FONASH, S. J.IEEE electron device letters. 1985, Vol 6, Num 8, pp 410-412, issn 0741-3106Article

Duration of magnetic aftereffectKLIK, I; CHING-RAY CHANG.Journal of magnetism and magnetic materials. 1993, Vol 128, Num 1-2, pp L17-L20, issn 0304-8853Article

Concerning the problem of the isokinetic relationship. II: The physical significance of the degrees of freedom in the statistical-mechanical modelLINERT, W; KUDRJAWTSEV, A. B.Australian journal of chemistry. 1984, Vol 37, Num 6, pp 1139-1146, issn 0004-9425Article

Vortex nucleation in superfluid 4HeMCCLINTOCK, P. V. E.Journal of physics. Condensed matter (Print). 1999, Vol 11, Num 40, pp 7695-7709, issn 0953-8984Article

Tuning the Schottky barrier height in metal : alkaline earth oxide interfacesNUNEZ, Matias; BUONGIORNO NARDELLI, M.Physica status solidi. B. Basic research. 2006, Vol 243, Num 9, pp 2081-2084, issn 0370-1972, 4 p.Conference Paper

Correlation of Schottky-barrier height and microstructure in the epitaxial Ni silicide on Si(111)LIEHR, M; SCHMID, P. E; LEGOUES, F. K et al.Physical review letters. 1985, Vol 54, Num 19, pp 2139-2142, issn 0031-9007Article

Current-voltage characteristics of Pd2Si based Schottky diodes on p-type (111) silicon and evaluation of their barrier heightsSUBHASH CHAND; JITENDRA KUMAR.Solid-state electronics. 1995, Vol 38, Num 5, pp 1103-1104, issn 0038-1101Article

Effect of lateral inhomogeneity of Barrier height on the photoresponse characteristics of Schottky junctionsHORVATH, Z. J; VO VAN TUYEN.SPIE proceedings series. 1998, pp 65-67, isbn 0-8194-2808-6Conference Paper

On the barrier height of a metal-semiconductor contact with a thin interfacial layerCHATTOPADHYAY, P; DAW, A. N.Solid-state electronics. 1985, Vol 28, Num 8, pp 831-836, issn 0038-1101Article

SUR LA STRUCTURE ENERGETIQUE DE LA LIMITE DE SEPARATION DU CONTACT METAL-GAASSEJRANYAN GB; TKHORIK YU A.1973; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1973; VOL. 7; NO 2; PP. 355-359; BIBL. 22 REF.Serial Issue

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