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Design considerations for high-flux collisionally opaque molecular beamsGRAY, D. C; SAWIN, H. H.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1992, Vol 10, Num 5, pp 3229-3238, issn 0734-2101Article

Mechanically propelled molecular beams: techniques and opportunitiesMOON, P. B; RALLS, M. P.Proceedings of the royal society of London, series A : mathematical and physical sciences. 1989, Vol 423, Num 1865, pp 361-371, issn 0080-4630, 11 p.Article

An electron diffraction apparatus for studies on small particles in a molecular beamHALL, B. D; FLUÊELI, M; REINHARD, D et al.Review of scientific instruments. 1991, Vol 62, Num 6, pp 1481-1488, issn 0034-6748, 8 p.Article

Observation of gallium source spittingBRUNEMEIER, P. E.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1991, Vol 9, Num 5, pp 2554-2555, issn 0734-211XArticle

Pulse compression and intensity enhancement in rotor-propelled molecular beamsMOON, P. B.Proceedings - Royal Society. Mathematical and physical sciences. 1991, Vol 435, Num 1894, pp 445-457, issn 0962-8444Article

Ex-situ-Untersuchungen von molekularstrahl-abgeschiedenen Schichten auf Silicium-WafernGONZALES, P. P; BÜSCHEL, M; ZEHE, A et al.Wissenschaftliche Zeitschrift der Technischen Universität Dresden. 1990, Vol 39, Num 1, pp 145-150, issn 0043-6925Conference Paper

ZnSe p-n junctions produced by metalorganic molecular-beam epitaxyMIGITA, M; TAIKE, A; YAMAMOTO, H et al.Journal of applied physics. 1990, Vol 68, Num 2, pp 880-882, issn 0021-8979Article

High-accuracy capabilities of an OsO₄ molecular-beam frequency standardGODONE, A; SASSI, M. P; BAVA, E et al.Metrologia. 1989, Vol 26, Num 1, pp 1-8, issn 0026-1394Article

Generation and evaluation of post-heated zinc and selenium molecular beamsYONETA, M; OHISHI, M; SAITO, H et al.Japanese journal of applied physics. 1993, Vol 32, Num 8A, pp L1106-L1108, issn 0021-4922, 2Article

High performance HgCdTe two-color infrared detectors grown by molecular beam epitaxyRAJAVEL, R. D; JAMBA, D. M; WU, O. K et al.Journal of crystal growth. 1997, Vol 175-76, pp 653-658, issn 0022-0248, 1Conference Paper

Source for excited states of alkali atoms and clusters using diffusion through a thin graphite foilHOLMLID, L; PETERSSON, J. B. C; ÅMAN, C et al.Review of scientific instruments. 1992, Vol 63, Num 3, pp 1966-1968, issn 0034-6748Article

Carbon doping and lattice contraction of GaAs films grown by conventional molecular beam epitaxyHOKE, W. E; LEMONIAS, P. J; WEIR, D. G et al.Journal of applied physics. 1991, Vol 69, Num 1, pp 511-513, issn 0021-8979Article

Low-frequency amplitude-noise characteristics of lead-salt diode lasers fabricated by molecular-beam-epitaxyFISCHER, H; WOLF, H; HALFORD, B et al.Infrared physics. 1991, Vol 31, Num 4, pp 381-385, issn 0020-0891Article

New modulated molecular beam scattering methods for probing nonlinear and coverage-dependent reaction kinetics at surfacesPADOWITZ, D. F; PETERLINZ, K. A; SIBENER, S. J et al.Langmuir. 1991, Vol 7, Num 11, pp 2566-2573, issn 0743-7463Article

Si₂H₆ doping of InP in gas-source molecular beam epitaxy using triethylindium and phosphineANDO, H; OKAMOTO, N; SANDHU, A et al.Japanese journal of applied physics. 1991, Vol 30, Num 10A, pp L1696-L1698, issn 0021-4922, 2Article

Detailed structural analysis of GaAs grown on patterned SiCHARASSE, M. N; BARTENLIAN, B; HIRTZ, J. P et al.Journal of electronic materials. 1990, Vol 19, Num 6, pp 567-573, issn 0361-5235Article

Effects of etching with a mixture of HCI gas and H₂ on the GaAs surface cleaning in molecular-beam epitaxySAITO, J; KONDO, K.Journal of applied physics. 1990, Vol 67, Num 10, pp 6274-6280, issn 0021-8979Article

Modeling of electron-beam-controlled semiconductor switchesBRINKMANN, R. P.Journal of applied physics. 1990, Vol 68, Num 1, pp 318-323, issn 0021-8979Article

Silicon molecular beam epitaxy : highlights of recent workBEAN, J. C.Journal of electronic materials. 1990, Vol 19, Num 10, pp 1055-1059, issn 0361-5235Article

A molecular beam study of the trapping and desorption of oxygen from Si(100) surfacesMIYAKE, T; NAMIKI, A; TAKEMOTO, T et al.Japanese journal of applied physics. 1990, Vol 29, Num 4, pp 723-728, issn 0021-4922, 1Article

A silicon bipolar transistor using MBD technologySATO, F; TATSUMI, T; NIINO, T et al.NEC research & development. 1990, Num 98, pp 30-34, issn 0547-051XArticle

Molecular-beam epitaxially grown spatial light modulators with charge-coupled-device addressingGOODHUE, W. D; BURKE, B. E; AULL, B. F et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1988, Vol 6, Num 4, pp 2356-2360, issn 0734-2101Article

Transistor action in novel GaAs/W/GaAs structuresDERKITS, G. E. JR; HARBISON, J. P; LEVKOFF, J et al.Applied physics letters. 1986, Vol 48, Num 18, pp 1220-1222, issn 0003-6951Article

MBR growth of GaAs nanometer-scale ridge quantum wire structures and their structural and optical characterizationsKOSHIBA, S; NOGE, H; ICHINOSE, H et al.Solid-state electronics. 1994, Vol 37, Num 4-6, pp 729-732, issn 0038-1101Conference Paper