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Results 1 to 25 of 1955

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Diffusion anormalement accélérée de phosphore à partir d'une couche de silicium implantée d'ions sous pressionVASIN, A. S; OKULICH, V. I; PANTELEEV, V. A et al.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 3, pp 483-487, issn 0015-3222Article

Redistribution par diffusion du manganèse dans GaAsSKORYATINA, E. A; MALKOVICH, R. SH.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 1, pp 164-166, issn 0015-3222Article

Diffusion without vacancies or interstitials: a new concerted exchange mechanismPANDEY, K. C.Physical review letters. 1986, Vol 57, Num 18, pp 2287-2290, issn 0031-9007Article

Grain boundary inhomogeneity and grain boundary heterodiffusionBOKSTEIN, B. S; OSTROVSKY, A. S; RODIN, A. O et al.Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties. 1995, Vol 72, Num 4, pp 829-836, issn 1364-2804Article

Quantum theory of interstitial diffusion in crystalsPRAKASH, S; MAHANTY, J.Journal of physics. C. Solid state physics. 1986, Vol 19, Num 35, pp 6951-6961, issn 0022-3719Article

A study of silicon interstitial kinetics using silicon membranes: applications to 2D dopant diffusionAHN, S. T; GRIFFIN, P. B; SHOTT, J. D et al.Journal of applied physics. 1987, Vol 62, Num 12, pp 4745-4755, issn 0021-8979Article

Diffusion d'impuretés en faible concentration dans les liquides semi-quantiquesBUISHVILI, L. L; TUGUSHI, A. I.ZETF. Pis′ma v redakciû. 1986, Vol 91, Num 6, pp 2097-2100, issn 0044-4510Article

Interstitial hydrogen in crystalline germaniumKHOO, G. S; ONG, C. K.Journal of physics. C. Solid state physics. 1987, Vol 20, Num 10, pp 1385-1392, issn 0022-3719Article

Clustering, precipitation and diffusion in ion-implanted siliconBENNETT, D. J; PRICE, T. E.Semiconductor science and technology. 1994, Vol 9, Num 1, pp 5-9, issn 0268-1242Article

Maskless selective diffusion of Si into GaAsSHIEH, C. L; MANTZ, J; KOHN, E et al.Electronics Letters. 1989, Vol 25, Num 1, pp 32-33, issn 0013-5194, 2 p.Article

Anisotropy of radiotracer diffusion in some nematic liquid crystalsCHMIELEWSKI, A. G.Molecular crystals and liquid crystals (1991). 1992, Vol 212, pp 205-215, issn 1056-8816Conference Paper

Mécanisme du choc d'irradiation dans les corps à structure désordonnéeKHABIBULLAEV, P. K; OKSENGENDLER, B. L; PAKHARUKOV, YU. V et al.Fizika tverdogo tela. 1986, Vol 28, Num 10, pp 3132-3133, issn 0367-3294Article

Transport behavior of water confined in carbon nanotubesYINGCHUN LIU; QI WANG.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 8, pp 085420.1-085420.4, issn 1098-0121Article

Diffusion of hydrogen molecules in fluorine-doped single-mode fibresIINO, A; MATSUBARA, K; OGAI, M et al.Electronics Letters. 1989, Vol 25, Num 1, pp 78-79, issn 0013-5194, 2 p.Article

Modelling of the chemical-pump effect and C clusteringCOLOMBEAU, B; COWERN, N. E. B.Semiconductor science and technology. 2004, Vol 19, Num 12, pp 1339-1342, issn 0268-1242, 4 p.Article

Segregation-controlled kinetics of fast impurity diffusion in polycrystalline solidsSTOLWIJK, N. A; POISSON, C. H; BERNARDINI, J et al.Journal of physics. Condensed matter (Print). 1996, Vol 8, Num 32, pp 5843-5856, issn 0953-8984Article

Diffusion d'une impureté ionisée dans un semiconducteur dopéGORNUSHKINA, E. D; MALKOVICH, R. SH.Fizika i tehnika poluprovodnikov. 1987, Vol 21, Num 2, pp 244-250, issn 0015-3222Article

Ségrégation intergranulaire et transport de matière = Intergranular segregation and matter transportBERNARDINI, J.Journal de physique. IV. 1999, Vol 9, Num 4, pp Pr4.155-Pr4.163, issn 1155-4339Conference Paper

A universal ion-beam-sputtering device for diffusion studiesWENWER, F; GUDE, A; RUMMEL, G et al.Measurement science & technology (Print). 1996, Vol 7, Num 4, pp 632-640, issn 0957-0233Article

Approximate solutions to a nonlinear diffusion equationKING, J. R.Journal of engineering mathematics. 1988, Vol 22, Num 1, pp 53-72, issn 0022-0833Article

Closed-tube diffusion of silicon in GaAs from sputtered silicon filmOMURA, E; WU, X. S; VAWTER, G. A et al.Electronics Letters. 1986, Vol 22, Num 9, pp 496-498, issn 0013-5194Article

Calculation of the solvent and solute enhancement factors in BCC metals assuming a hypothetical structure with fourteen first nearest neighborsPELLEG, Joshua; SEGEL, V.Journal of physics. Condensed matter (Print). 2009, Vol 21, Num 14, issn 0953-8984, 145409.1-145409.11Article

Stress corrosion cracking and hydrogen diffusion in magnesiumATRENS, Andrej; WINZER, Nicholas; GUANGLING SONG et al.Advanced engineering materials (Print). 2006, Vol 8, Num 8, pp 749-751, issn 1438-1656, 3 p.Article

Transient enhanced diffusion during post-implant annealing of siliconBENNETT, D. J; PRICE, T. E.Semiconductor science and technology. 1994, Vol 9, Num 8, pp 1535-1542, issn 0268-1242Article

Generalized Langevin-equation approach to impurity diffusion in solids: perturbation theoryMUNAKATA, T.Physical review. B, Condensed matter. 1986, Vol 33, Num 12, pp 8016-8026, issn 0163-1829, 1Article

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