Construction and applications of a dual mass-selected low-energy ion beam systemQIN, F; XIANGMING WANG; ZHIKAI LIU et al.Review of scientific instruments. 1991, Vol 62, Num 10, pp 2322-2325, issn 0034-6748Article

Quantification of the strain fully relaxed Si/Ge heteroepitaxial films and superlattices via molecular dynamicsSRIVASTAVA, D; TAYLOR, R. S; GARRISON, B. J et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1991, Vol 9, Num 3, pp 1517-1523, issn 0734-211XArticle

In situ monitoring of step arrays on vicinal silicon (100) surfaces for heteroepitaxyCROOK, G. E; DÄWERITZ, L; PLOOG, K et al.Physical review. B, Condensed matter. 1990, Vol 42, Num 8, pp 5126-5134, issn 0163-1829Article

Kinetic effects in heteroepitaxial growthTERSOFF, J.Applied surface science. 2002, Vol 188, Num 1-2, pp 1-3, issn 0169-4332Conference Paper

Novel exchange mechanisms in the surface diffusion of oxidesHARRIS, Duncan J; LAVRENTIEV, Mikhail Yu; HARDING, John H et al.Journal of physics. Condensed matter (Print). 2004, Vol 16, Num 13, pp L187-L192, issn 0953-8984Article

Characterization of elastic strains in semiconductor heteroepitaxial layers by HREMROBERTSON, M. D; CORBETT, J. M; WEBB, J. B et al.Progress in surface science. 1995, Vol 50, Num 1-4, pp 377-386, issn 0079-6816Conference Paper

New approach to grow pseudomorphic structures over the critical thicknessLO, Y. H.Applied physics letters. 1991, Vol 59, Num 18, pp 2311-2313, issn 0003-6951Article

Study of the CVD process sequences for an improved control of the Bias Enhanced Nucleation step on siliconSAADA, S; ARNAULT, J. C; TRANCHANT, N et al.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 9, pp 2854-2859, issn 1862-6300, 6 p.Conference Paper

Heteroepitaxy of cubic GaNTRAMPERT, A; BRANDT, O; YANG, H et al.Journal de physique. III (Print). 1997, Vol 7, Num 12, pp 2309-2316, issn 1155-4320Conference Paper

Molecular dynamics simulations of La₂O₃ thin films on SiO₂MOU FANG; KELTY, Stephen P; XIANGMING HE et al.Journal of energy chemistry. 2014, Vol 23, Num 3, pp 282-286, issn 2095-4956, 5 p.Article

Scalable synthesis of graphene on single crystal Ir(111) filmsZELLER, Patrick; DÄNHARDT, Sebastian; GSELL, Stefan et al.Surface science. 2012, Vol 606, Num 19-20, pp 1475-1480, issn 0039-6028, 6 p.Article

High-efficiency metal-semiconductor-metal photodetectors on heteroepitaxially grown Ge on SiOKYAY, Ali K; NAYFEH, Ammar M; SARASWAT, Krishna C et al.Optics letters. 2006, Vol 31, Num 17, pp 2565-2567, issn 0146-9592, 3 p.Article

SiC pour l'électronique de puissance du futurNALLET, Franck.Techniques de l'ingénieur. Matériaux fonctionnels. 2002, Vol N1, Num RE3, issn 1776-0178, RE3.1-RE3.11Article

Kinetic Monte Carlo simulations of heteroepitaxial growth with an atomistic model of elasticityPINKU NATH; MADHAV RANGANATHAN.Surface science. 2012, Vol 606, Num 17-18, pp 1450-1457, issn 0039-6028, 8 p.Article

Thermodynamic separability of ultra-thin film surfaces and interfacesFRIESEN, C.Surface science. 2006, Vol 600, Num 5, pp 1012-1016, issn 0039-6028, 5 p.Article

Lattice-constant-adaptable crystallographics. I, Heteroepitaxial growth of semiconductors and other specific compounds on lattice-constant-adapted garnets, spinels and perovskites; A systematic geometrical (ot experimental) evaluationHAISMA, J; PISTORIUS, J. A; MATEIKA, D et al.Journal of crystal growth. 1990, Vol 102, Num 4, pp 979-993, issn 0022-0248Article

Nanoscale dislocation patterning in Bi(111)/Si(001) heteroepitaxyJNAWALI, G; HATTAB, H; BOBISCH, C. A et al.Surface science. 2009, Vol 603, Num 13, pp 2057-2061, issn 0039-6028, 5 p.Article

Heteroepitaxial growth of Co/Cu(001): An accelerated molecular dynamics simulation studyMIRON, Radu A; FICHTHORN, Kristen A.Physical review B. Condensed matter and materials physics. 2006, Vol 72, Num 3, pp 035415.1-035415.7, issn 1098-0121Article

Pit nucleation in the presence of three-dimensional islands during heteroepitaxial growthBOUVILLE, Mathieu; MILLUNCHICK, Joanna Mirecki; FALK, Michael L et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 23, pp 235312.1-235312.9, issn 1098-0121Article

CVD diamond films : nucleation and growthLEE, S.-T; ZHANGDA LIN; XIN JIANG et al.Materials science & engineering. R, Reports. 1999, Vol 25, Num 4, pp 123-154, issn 0927-796XArticle

Thermodynamic and kinetic mechanisms in self-assembled quantum dot formationBARABASI, A.-L.Materials science & engineering. B, Solid-state materials for advanced technology. 1999, Vol 67, Num 1-2, pp 23-30, issn 0921-5107Conference Paper

UHV/CVD Ge/Si(100) heteroepitaxy monitored by in situ ellipsometryLARCIPRETE, R; COZZI, S; MASETTI, E et al.Applied surface science. 1996, Vol 102, pp 52-56, issn 0169-4332Conference Paper

Electrical characteristics of diodes fabricated in selective Si/Si_1-xGe_x epitaxial layersKAMINS, T. I; NAUKA, K; JACOWITZ, R. D et al.Journal of electronic materials. 1992, Vol 21, Num 8, pp 817-824, issn 0361-5235Article

Microstructure of buried CoSi₂ layers formed by high-dose Co implantation into (100) and (111) Si substratesBULLE-LIEUWMA, C. W. T; VAN OMMEN, A. H; VANDENHOUDT, D. E. W et al.Journal of applied physics. 1991, Vol 70, Num 6, pp 3093-3108, issn 0021-8979Article

Epitaxie relaxatoire en phase liquide basée sur l'inversion du transport de masse et ses possibilités pour la production de couches A3B5 ultramincesBESSOLOV, V. N; KUKUSHKIN, S. A; LEBEDEV, M. V et al.Žurnal tehničeskoj fiziki. 1988, Vol 58, Num 8, pp 1507-1512, issn 0044-4642Article