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Results 1 to 25 of 3800

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Construction and applications of a dual mass-selected low-energy ion beam systemQIN, F; XIANGMING WANG; ZHIKAI LIU et al.Review of scientific instruments. 1991, Vol 62, Num 10, pp 2322-2325, issn 0034-6748Article

Scalable synthesis of graphene on single crystal Ir(111) filmsZELLER, Patrick; DÄNHARDT, Sebastian; GSELL, Stefan et al.Surface science. 2012, Vol 606, Num 19-20, pp 1475-1480, issn 0039-6028, 6 p.Article

Kinetic Monte Carlo simulations of heteroepitaxial growth with an atomistic model of elasticityPINKU NATH; MADHAV RANGANATHAN.Surface science. 2012, Vol 606, Num 17-18, pp 1450-1457, issn 0039-6028, 8 p.Article

Thermodynamic separability of ultra-thin film surfaces and interfacesFRIESEN, C.Surface science. 2006, Vol 600, Num 5, pp 1012-1016, issn 0039-6028, 5 p.Article

Investigation of the interface manipulation in SiC(100) on Si(100) with isovalent impuritiesPEZOLDT, J; MORALES, F. M; ZGHEIB, Ch et al.Surface and interface analysis. 2006, Vol 38, Num 4, pp 444-447, issn 0142-2421, 4 p.Conference Paper

Effects of substrate shape, curvature and roughness on thin heteroepitaxial films of Pt on Au(111)MATHUR, Anant; ERLEBACHER, Jonah.Surface science. 2008, Vol 602, Num 17, pp 2863-2875, issn 0039-6028, 13 p.Article

Langevin equation for self-organized morphologies of thin heteroepitaxial filmsHASELWANDTER, Christoph A; VVEDENSKY, Dimitri D.Surface science. 2007, Vol 601, Num 13, pp 2762-2764, issn 0039-6028, 3 p.Conference Paper

Quantification of the strain fully relaxed Si/Ge heteroepitaxial films and superlattices via molecular dynamicsSRIVASTAVA, D; TAYLOR, R. S; GARRISON, B. J et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1991, Vol 9, Num 3, pp 1517-1523, issn 0734-211XArticle

In situ monitoring of step arrays on vicinal silicon (100) surfaces for heteroepitaxyCROOK, G. E; DÄWERITZ, L; PLOOG, K et al.Physical review. B, Condensed matter. 1990, Vol 42, Num 8, pp 5126-5134, issn 0163-1829Article

Kinetic effects in heteroepitaxial growthTERSOFF, J.Applied surface science. 2002, Vol 188, Num 1-2, pp 1-3, issn 0169-4332Conference Paper

Study of the CVD process sequences for an improved control of the Bias Enhanced Nucleation step on siliconSAADA, S; ARNAULT, J. C; TRANCHANT, N et al.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 9, pp 2854-2859, issn 1862-6300, 6 p.Conference Paper

Novel exchange mechanisms in the surface diffusion of oxidesHARRIS, Duncan J; LAVRENTIEV, Mikhail Yu; HARDING, John H et al.Journal of physics. Condensed matter (Print). 2004, Vol 16, Num 13, pp L187-L192, issn 0953-8984Article

Characterization of elastic strains in semiconductor heteroepitaxial layers by HREMROBERTSON, M. D; CORBETT, J. M; WEBB, J. B et al.Progress in surface science. 1995, Vol 50, Num 1-4, pp 377-386, issn 0079-6816Conference Paper

New approach to grow pseudomorphic structures over the critical thicknessLO, Y. H.Applied physics letters. 1991, Vol 59, Num 18, pp 2311-2313, issn 0003-6951Article

Méthode de détermination de la profondeur d'une couche déformée plastiquement dans les systèmes hétéroépitaxiauxMATVEEVA, L. A; SEMENOVA, G. N.Fizika i himiâ obrabotki materialov. 1985, Num 5, pp 111-114, issn 0015-3214Article

Fast kinetic Monte Carlo simulation and statistics of quantum dot arraysPETROV, P. P; MILLER, W.Surface science. 2014, Vol 621, pp 175-183, issn 0039-6028, 9 p.Article

Fabrication of SiGe rings and holes on Si(001) by flash annealingPERSICHETTI, L; CAPASSO, A; SGARLATA, A et al.Applied surface science. 2013, Vol 283, pp 813-819, issn 0169-4332, 7 p.Article

Stranski―Krastanow growth of copper overlayers on the Ni(110) surfaceFUKUDA, T; UMEZAWA, K; NAKAYAMA, H et al.Surface science. 2012, Vol 606, Num 15-16, pp 1221-1226, issn 0039-6028, 6 p.Article

Study of Stranski―Krastanov growth using kinetic Monte Carlo simulations with an atomistic model of elasticityNATH, Pinku; RANGANATHAN, Madhav.Surface science. 2014, Vol 628, pp 8-16, issn 0039-6028, 9 p.Article

Heteroepitaxy of cubic GaNTRAMPERT, A; BRANDT, O; YANG, H et al.Journal de physique. III (Print). 1997, Vol 7, Num 12, pp 2309-2316, issn 1155-4320Conference Paper

Equilibre de phase dans le système phase liquide-phase solide avant l'hétéroépitaxie des couches. II. Création de solutions à composants multiples en équilibre A3B5 par saturation au moyen de la dissolution de la source-support. Limites d'application de la méthodeBOLKHOVITYANOV, YU. B.Žurnal fizičeskoj himii. 1983, Vol 57, Num 7, pp 1698-1703, issn 0044-4537Article

Monte Carlo study of the hetero-polytypical growth of cubic on hexagonal silicon carbide polytypesCAMARDA, Massimo.Surface science. 2012, Vol 606, Num 15-16, pp 1263-1267, issn 0039-6028, 5 p.Article

Growth of perfect and smooth Ag and Co monatomic wires on Pt vicinal surfaces : A kinetic Monte Carlo studyGARBOUJ, Hedi; SAID, Moncef; PICAUD, Fabien et al.Surface science. 2009, Vol 603, Num 1, pp 22-26, issn 0039-6028, 5 p.Article

Adatom and dimer migration in heteroepitaxy : Co/Pt(111)GOYHENEX, C.Surface science. 2006, Vol 600, Num 1, pp 15-22, issn 0039-6028, 8 p.Article

Adsorption induced faceting and superstructural phase diagram of the Sb/Si(5512) interfaceKUMAR, Mahesh; GOVIND; PALIWAL, V. K et al.Surface science. 2006, Vol 600, Num 13, pp 2745-2751, issn 0039-6028, 7 p.Article

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