kw.\*:("Heterojunction")
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Hot-electron memory effect in double-leyered heterostructuresLURYI, S; KASTALSKY, A; GOSSARD, A. C et al.Applied physics letters. 1984, Vol 45, Num 12, pp 1294-1296, issn 0003-6951Article
Organic solar cells: Their developments and potentialsYEH, Naichia; YEH, Pulin.Renewable & sustainable energy review. 2013, Vol 21, pp 421-431, issn 1364-0321, 11 p.Article
ENHANCED LOCALIZED DEGRADATION AND ANOMALOUS EMISSION SPECTRA OF GA1-XALXAS DOUBLE HETEROSTRUCTURE LASERS INDUCED BY FABRICATION PROCESSES.NEWMAN DH; GODFREY RF; GOODWIN AR et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 6; PP. 353-355; BIBL. 11 REF.Article
Pulsed 1-watt heterojunction bipolar transistors at 35 GHzADLERSTEIN, M. G; ZAITLIN, M. P; HOKE, W et al.IEEE microwave and guided wave letters. 1993, Vol 3, Num 5, pp 145-147, issn 1051-8207Article
Enhanced photosensitization process induced by the p-n junction of Bi2O2CO3/BiOCl heterojunctions on the degradation of rhodamine BHAIJING LU; LINGLING XU; BO WEI et al.Applied surface science. 2014, Vol 303, pp 360-366, issn 0169-4332, 7 p.Article
Polariton modes of semiconductor superlattice systemsWEN-MING LIU; GUNNAR ELIASSON; QUINN, J. J et al.Solid state communications. 1985, Vol 55, Num 6, pp 533-535, issn 0038-1098Article
The performance potential of P-n-p heterojunction bipolar transistorsSUNERLAND, D. A; DAPKUS, P. D.IEEE electron device letters. 1985, Vol 6, Num 12, pp 648-651, issn 0741-3106Article
Fabrication and characterization of InGaP/GaAs heterojunction bipolar transistors on GOI substratesTHOMAS, Shawn G; JOHNSON, Eric S; TRACY, Clarence et al.IEEE electron device letters. 2005, Vol 26, Num 7, pp 438-440, issn 0741-3106, 3 p.Article
A numerical investigation of model effective-mass Hamiltonians and the associated wavefunction-matching conditions for abrupt heterojunctionsCSAVINSZKY, P; ELABSY, A. M.Semiconductor science and technology. 1988, Vol 3, Num 10, pp 1010-1014, issn 0268-1242Article
A note on heterojunction discontinuitiesVON ROOS, O.IEEE electron device letters. 1985, Vol 6, Num 3, pp 126-127, issn 0741-3106Article
Nonlocality in the two-dimensional plasmon dispersionBATKE, E; HEITMANN, D; KOTTHAUS, J. P et al.Physical review letters. 1985, Vol 54, Num 21, pp 2367-2370, issn 0031-9007Article
Effets magnétooptiques dans un semiconducteur à superréseauBROKHNITSKIJ, L. A.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 5, pp 829-834, issn 0015-3222Article
THEORIE DE L'HETEROCONTACT DES SEMICONDUCTEURS ISOTYPESKEL'MAN IV.1976; IZVEST. AKAD. NAUK KAZAKH. S.S.R., SER. FIZ.-MAT.; S.S.S.R.; DA. 1976; VOL. 14; NO 6; PP. 73-77; ABS. KAZ.; BIBL. 6 REF.Article
Photon recycling in double heterostructures. II: The case of non-perfect optical confinementENDERS, P.Physica status solidi. B. Basic research. 1986, Vol 137, Num 2, pp 701-708, issn 0370-1972Article
GAAS-GA1-XALXAS DOUBLE-HETEROSTRUCTURE INJECTION LASERS WITH DISTRIBUTED BRAGG REFLECTORS.WON TIEN TSANG; SHYH WANG.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 10; PP. 596-598; BIBL. 10 REF.Article
Electrical and optical bandgaps of GexSi1-x strained layersJAIN, S. C; POORTMANS, J; IYER, S. S et al.I.E.E.E. transactions on electron devices. 1993, Vol 40, Num 12, pp 2338-2343, issn 0018-9383Article
Electron transport in submicron AlGaAs/GaAs heterostructure bipolar transistors with a modified collector structureERSHOV, M; SVYATCHENKO, A.Acta physica Polonica. A. 1990, Vol 77, Num 2-3, pp 233-235, issn 0587-4246Article
Simulation of influence of undoped spacer layers in Si/SiGe-HBTs on transit frequencyROSSBERG, M; SCHWIERZ, F; ALBERS, J. N et al.Electronics Letters. 1993, Vol 29, Num 1, pp 85-87, issn 0013-5194Article
parameter-extraction method for heterojunction bipolar transistorsMAAS, S. A; TAIT, D.IEEE microwave and guided wave letters. 1992, Vol 2, Num 12, pp 502-504Article
Surface modification of m-BiVO4 with wide band-gap semiconductor BiOCl to largely improve the visible light induced photocatalytic activityJING CAO; CHUNCHUN ZHOU; HAILI LIN et al.Applied surface science. 2013, Vol 284, pp 263-269, issn 0169-4332, 7 p.Article
A new fabrication technology for AlGaAs/GaAs HEMT LSI's using InGaAs nonalloyed ohmic contactsKURODA, S; HARADA, N; KATAKAMI, T et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2196-2203, issn 0018-9383, 8 p., 1Article
Breakdown behavior of GaAs/AlGaAs HBT'sCHEN, J. J; GUANG-BO GAO; JEN-INN CHYI et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2165-2172, issn 0018-9383, 8 p., 1Article
Characterization of ultra-high-speed pseudomorphic AlGaAs/InGaAs (on GaAs) MODFET'sNGUYEN, L. D; TASKER, P. J; RADULESCU, D. C et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2243-2248, issn 0018-9383, 6 p., 1Article
Demonstration and properties of a planar heterojunction bipolar transistor with lateral current flowTHORNTON, R. L; MOSBY, W. J; CHUNG, H. F et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2156-2164, issn 0018-9383, 9 p., 1Article
High-speed and large noise margin tolerance E/D logic gates with LDD structure DMT's fabricated using selective RIE technologyHIDA, H; TSUKADA, Y; OGAWA, Y et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2223-2230, issn 0018-9383, 8 p., 1Article