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CBC reduction in InP heterojunction bipolar transistor with selectively implanted collector pedestalYINGDA DONG; GRIFFITH, Zach; DAHLSTRÖM, Mattias et al.DRC : Device research conference. 2004, pp 67-68, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

On the suitability of SiGe HBTs for high-temperature (to 300°C) electronicsTIANBING CHEN; KUO, Wei-Min; ENHAI ZHAO et al.Bipolar/BiCMOS Circuits and Technology Meetings. 2004, pp 217-220, isbn 0-7803-8618-3, 1Vol, 4 p.Conference Paper

Planarized InP/InGaAs heterojunction bipolar transistors with fmax > 500 GHzSAWDAI, D; CHANG, P. C; GAMBIN, V et al.DRC : Device research conference. 2004, pp a14-a15, isbn 0-7803-8284-6, 1VolConference Paper

Fabrication and characterization of InGaP/GaAs heterojunction bipolar transistors on GOI substratesTHOMAS, Shawn G; JOHNSON, Eric S; TRACY, Clarence et al.IEEE electron device letters. 2005, Vol 26, Num 7, pp 438-440, issn 0741-3106, 3 p.Article

15-nm base type-II InP/GaAsSb/InP DHBTs with FT = 384 GHz and a 6-V BVCEOLIU, H. G; WATKINS, S. P; BOLOGNESI, C. R et al.I.E.E.E. transactions on electron devices. 2006, Vol 53, Num 3, pp 559-561, issn 0018-9383, 3 p.Article

10-GHz power performance of a type II InP/GaAsSb DHBTCARUTH, David C; CHU-KUNG, Benjamin F; FENG, Milton et al.IEEE electron device letters. 2005, Vol 26, Num 9, pp 604-606, issn 0741-3106, 3 p.Article

Reverse active mode current characteristics of sige HBTsRIEH, Jae-Sung; JIN CAI; NING, Tak et al.I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 6, pp 1219-1222, issn 0018-9383, 4 p.Article

Generation and integration of scalable bipolar compact modelsSHERIDAN, David C; MURTY, Ramana M; NEWTON, Kim M et al.Bipolar/BiCMOS Circuits and Technology Meetings. 2004, pp 132-139, isbn 0-7803-8618-3, 1Vol, 8 p.Conference Paper

Broadband amplifier at 28 GHz based on the InP/InGaAs HBT phototransistor for optical-radio interfaceTHURET, J; GONZALEZ, C; BENCHIMOL, J. L et al.OMW : interactions between microwaves and optics. International summer school. 1998, pp 142-143, isbn 2-910986-17-9Conference Paper

Planar device isolation for InP based DHBTsPARTHASARATHY, N; DONG, Y; SCOTT, D et al.DRC : Device research conference. 2004, pp 71-72, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

Deep submicron InP DHBT technology with electroplated emitter and base contactsURTEAGA, M; ROWELL, P; PIERSON, R et al.DRC : Device research conference. 2004, pp 239-240, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

A new method to measure temperature- and power-dependent thermal resistance of HBTsMENOZZI, R; BARRETT, J; ERSLAND, P et al.ROCS workshop. 2004, pp 33-44, isbn 0-7908-0105-1, 1Vol, 12 p.Conference Paper

Collector vertical scaling and performance tradeoffs in 300 GHz sige HBTSRIEH, J.-S; KHATER, M; SCHONENBERG, K. T et al.DRC : Device research conference. 2004, pp 235-236, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

Separating HBT wearout from defects during early life operationROESCH, William J; RAINS, Philip.Microelectronics and reliability. 2014, Vol 54, Num 2, pp 360-365, issn 0026-2714, 6 p.Conference Paper

The use of InGaAs / InP photo - HBT's in optical / microwave processingEISENSTEIN, G.OMW : interactions between microwaves and optics. International summer school. 2000, pp 77-88, isbn 2-910986-25-XConference Paper

Kirk effect in bipolar transistors with a nonuniform dopant profile in the collectorELIAS, D. Cohen; RITTER, D.IEEE electron device letters. 2006, Vol 27, Num 1, pp 25-27, issn 0741-3106, 3 p.Article

The influence of selected material and transport parameters on the accuracy of modeling early voltage in SiGe-base HBTZAREBA, Agnieszka; LUKASIAK, Lidia; JAKUBOWSKI, Andrzej et al.I.E.E.E. transactions on electron devices. 2006, Vol 53, Num 8, pp 1946-1948, issn 0018-9383, 3 p.Article

High-Frequency Noise Modeling of InGaP/GaAs HBT With Base-Contact Capacitance and AC Current Crowding EffectHUANG, Shou-Chien; TANG, Wen-Bin; HSIN, Yue-Ming et al.IEEE electron device letters. 2009, Vol 30, Num 11, pp 1125-1127, issn 0741-3106, 3 p.Article

Multi-finger power SiGe HBTs for thermal stability enhancement over a wide biasing rangeJIN DONGYUE; ZHANG WANRONG; SHEN PEI et al.Solid-state electronics. 2008, Vol 52, Num 6, pp 937-940, issn 0038-1101, 4 p.Article

Impact of scaling on the inverse-mode operation of SiGe HBTsAPPASWAMY, Aravind; BELLINI, Marco; KUO, Wei-Min Lance et al.I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 6, pp 1492-1501, issn 0018-9383, 10 p.Article

Graded base type-II InP/GaAsSb DHBT with fT = 475 GHzSNODGRASS, William; WU, Bing-Ruey; HAFEZ, Walid et al.IEEE electron device letters. 2006, Vol 27, Num 2, pp 84-86, issn 0741-3106, 3 p.Article

A submicrometer 252 GHz fT and 283 GHz fMAX inp DHBT with reduced CBC using selectively implanted buried subcollector (SIBS)LI, James C; CHEN, Mary; HITKO, Donald A et al.IEEE electron device letters. 2005, Vol 26, Num 3, pp 136-138, issn 0741-3106, 3 p.Article

Radio-Frequency-Noise Characterization and Modeling of Type-II InP-GaAsSb DHBTCHUANG, Yu-Ju; CIMINO, Kurt; STUENKEL, Mark et al.IEEE electron device letters. 2008, Vol 29, Num 1, pp 21-23, issn 0741-3106, 3 p.Article

Microwave Performance of InAlAsSb/In0.35Ga0.65Sb/InAlAsSb Double Heterojunction Bipolar TransistorsMAIRIAUX, E; DESPLANQUE, L; WALLART, X et al.IEEE electron device letters. 2010, Vol 31, Num 4, pp 299-301, issn 0741-3106, 3 p.Article

Patterned n+ implant into InP substrate for HBT subcollectorCHEN, Mary Y; SOKOLICH, Marko; CHOW, David H et al.I.E.E.E. transactions on electron devices. 2004, Vol 51, Num 10, pp 1736-1739, issn 0018-9383, 4 p.Article

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