kw.\*:("Heterojunction transistor")
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An analytical current-voltage characteristics model for high electron mobility transistors based on nonlinear charge-control formulationAN-JUI SHEY; KU, W. H.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2299-2306, issn 0018-9383, 8 p., 1Article
Numerical simulation and comparison of Si BJT's and Si1-xGex HBT'sPEJCINOVIC, B; KAY, L. E; TING-WEI TANG et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2129-2137, issn 0018-9383, 9 p., 1Article
A new fabrication technology for AlGaAs/GaAs HEMT LSI's using InGaAs nonalloyed ohmic contactsKURODA, S; HARADA, N; KATAKAMI, T et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2196-2203, issn 0018-9383, 8 p., 1Article
Breakdown behavior of GaAs/AlGaAs HBT'sCHEN, J. J; GUANG-BO GAO; JEN-INN CHYI et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2165-2172, issn 0018-9383, 8 p., 1Article
Characterization of ultra-high-speed pseudomorphic AlGaAs/InGaAs (on GaAs) MODFET'sNGUYEN, L. D; TASKER, P. J; RADULESCU, D. C et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2243-2248, issn 0018-9383, 6 p., 1Article
Demonstration and properties of a planar heterojunction bipolar transistor with lateral current flowTHORNTON, R. L; MOSBY, W. J; CHUNG, H. F et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2156-2164, issn 0018-9383, 9 p., 1Article
High-speed and large noise margin tolerance E/D logic gates with LDD structure DMT's fabricated using selective RIE technologyHIDA, H; TSUKADA, Y; OGAWA, Y et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2223-2230, issn 0018-9383, 8 p., 1Article
Pseudomorphic bipolar quantum resonant-tunneling transistorSEABAUGH, A. C; FRENSLEY, W. R; RANDALL, J. N et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2328-2334, issn 0018-9383, 7 p., 1Article
The development of heterojunction integrated injection logicHAN-TZONG YUAN; HUNG-DAH SHIH; DELANEY, J et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2083-2092, issn 0018-9383, 10 p., 1Article
A 0.5-μm-gate GaAs/AlGaAs inverted HEMT IC-multiplier and D/A converterNISHI, S; SEKI, S; SAITO, T et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2191-2195, issn 0018-9383, 5 p., 1Article
Analysis of the operation of GaAlAs/GaAs HBT'sSANDIP TIWARI; FRANK, D. J.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2105-2121, issn 0018-9383, 17 p., 1Article
Recent advances in ultrahigh-speed HEMT LSI technologyABE, M; MIMURA, T; KOBAYASHI, N et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2021-202031, issn 0018-9383, 200011 p., 1Article
Si/SiGe heterojunction bipolar transistor made by molecular-beam epitaxyNAROZNY, P; DAMBKES, H; KIBBEL, H et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2363-2366, issn 0018-9383, 4 p., 1Article
Studies of the DC, low-frequency, and microwave characteristics of uniform and step-doped GaAs/AlGaAs HEMT'sHIN-FAI CHAU; PAVLIDIS, D; CAZAUX, J.-L et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2288-2298, issn 0018-9383, 11 p., 1Article
The effects of heavy impurity doping on AlGaAs/GaAs bipolar transistorsKLAUSMEIER-BROWN, M. E; LUNDSTROM, M. S; MELLOCH, M. R et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2146-2155, issn 0018-9383, 10 p., 1Article
Two-dimensional numerical simulation of Fermi-level pinning phenomena due to DX centers in AlGaAs/GaAs HEMT'sMIZUTA, H; YAMAGUCHI, K; YAMANE, M et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2307-2314, issn 0018-9383, 8 p., 1Article
AlGaAs/InGaAs heterostructures with doped channels for discrete devices and monolithic amplifiersSAUNIER, P; HUA QUEN TSERNG.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2231-2235, issn 0018-9383, 5 p., 1Article
Short-channel effects in subquarter-micrometer-gate HEMT's: simulation and experimentAWANO, Y; KOSUGI, M; KOSEMURA, K et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2260-2266, issn 0018-9383, 7 p., 1Article
Subthreshold and near-threshold conduction in GaAs/AlGaAs MODFET'sCHUN JIANG; TSUI, D. C; LEVY, H. M et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2281-2287, issn 0018-9383, 7 p., 1Article
The effect of base grading on the gain and high-frequency performance of AlGaAs/GaAs heterojunction bipolar transistorsHO, S. C. M; PULFREY, D. L.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2173-2182, issn 0018-9383, 10 p., 1Article
Transient Monte Carlo analysis and application to heterojunction bipolar transistor switchingJUNTAO HU; TOMIZAWA, K; PAVLIDIS, D et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2138-2145, issn 0018-9383, 8 p., 1Article
TRANSISTOR SCALING WITH CONSTANT SUBTHRESHOLD LEAKAGESOKEL R.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 4; PP. 85-87; BIBL. 10 REF.Article
High-speed (ft=78 GHz) AllnAs/GalnAs single heterojunction HBTFARLEY, C. W; CHANG, M. F; ASBECK, P. M et al.Electronics Letters. 1989, Vol 25, Num 13, pp 846-847, issn 0013-5194, 2 p.Article
Fully self-aligned microwave InP/GaInAs single heterojunction bipolar transistorsSHANTHARAMA, L. G; SCHUMACHER, H; HAYES, J. R et al.Electronics Letters. 1989, Vol 25, Num 2, pp 127-128, issn 0013-5194, 2 p.Article
APPLICATION OF THERMAL PULSE ANNEALING TO ION-IMPLANTED GAALAS/GAAS HETEROJUNCTION BIPOLAR TRANSISTORSASBECK PM; MILLER DL; BABCOCK EJ et al.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 4; PP. 81-84; BIBL. 14 REF.Article
