Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("Heterounión")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 10364

  • Page / 415
Export

Selection :

  • and

Analytical base-collector heterojunction capacitance model including collector current effectsLIOU, J. J.Journal of applied physics. 1989, Vol 66, Num 1, pp 286-291, issn 0021-8979, 6 p.Article

Photon recycling in double heterostructures. II: The case of non-perfect optical confinementENDERS, P.Physica status solidi. B. Basic research. 1986, Vol 137, Num 2, pp 701-708, issn 0370-1972Article

A numerical investigation of model effective-mass Hamiltonians and the associated wavefunction-matching conditions for abrupt heterojunctionsCSAVINSZKY, P; ELABSY, A. M.Semiconductor science and technology. 1988, Vol 3, Num 10, pp 1010-1014, issn 0268-1242Article

Pulsed 1-watt heterojunction bipolar transistors at 35 GHzADLERSTEIN, M. G; ZAITLIN, M. P; HOKE, W et al.IEEE microwave and guided wave letters. 1993, Vol 3, Num 5, pp 145-147, issn 1051-8207Article

Influence de l'échauffement des porteurs sur les courants de fuite dans les hétérojonctions doubles InGaAsP/InPPISHCHALKO, V. D; TOLSTIKHIN, V. I.Fizika i tehnika poluprovodnikov. 1988, Vol 22, Num 9, pp 1617-1622, issn 0015-3222Article

Single transverse mode condition in long wavelength SCH semiconductor laser diodesGHAFOORI-SHIRAZ, H.Transactions of the Institute of Electronics and Communication Engineers of Japan. Section E. 1987, Vol 70, Num 2, pp 130-134, issn 0387-236XArticle

High-frequency characteristics of inverted mode heterojunction bipolar transistorsNADIR DAGU; WAI LEE; SHEILA PRASAD et al.IEEE electron device letters. 1987, Vol 8, Num 10, pp 472-474, issn 0741-3106Article

High-frequency performance of lattice-strained heterojunction GalnAs/GaAs bipolar transistorsRAMBERG, L. P; CHEN, Y.-K; ENQUIST, P. M et al.Electronics Letters. 1986, Vol 22, Num 21, pp 1123-1125, issn 0013-5194Article

Operation of the Si/CoSi2/Si heterostructure transistorHENSEL, J. C.Applied physics letters. 1986, Vol 49, Num 9, pp 522-524, issn 0003-6951Article

Comparison of compositionally graded to abrupt emitter-base junctions used in the heterojunction bipolar transistorENQUIST, P. M; RAMBERG, L. P; EASTMAN, L. F et al.Journal of applied physics. 1987, Vol 61, Num 7, pp 2663-2669, issn 0021-8979Article

Comprehensive study of AuMn p-type ohmic contact for GaAs/GaAlAs heterojunction bipolar transistorsDUBON-CHEVALLIER, C; GAUNEAU, M; BRESSE, J. F et al.Journal of applied physics. 1986, Vol 59, Num 11, pp 3783-3786, issn 0021-8979Article

A model-base comparison: GaAs/GaAlAs HBT versus silicon bipolarKURATA, M; KATOH, R; YOSHIDA, J et al.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 10, pp 1413-1420, issn 0018-9383Article

Gain and frequency response of a graded-base heterojunction bipolar phototransistorROY, B. C; CHAKRABARTI, N. B.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 7, pp 1482-1490, issn 0018-9383Article

A p-n-p AlGaAs heterojunction bipolar transistor for high-temperature operationFROST, M. S; RICHES, M; KERR, T et al.Journal of applied physics. 1986, Vol 60, Num 6, pp 2149-2153, issn 0021-8979Article

Electrical and optical bandgaps of GexSi1-x strained layersJAIN, S. C; POORTMANS, J; IYER, S. S et al.I.E.E.E. transactions on electron devices. 1993, Vol 40, Num 12, pp 2338-2343, issn 0018-9383Article

Diffusive base transport in narrows base InP/Ga0.47In0.53As heterojunction bipolar transitorsRITTER, D; HAMM, R. A; FEYGENSON, A et al.Applied physics letters. 1991, Vol 59, Num 26, pp 3431-3433, issn 0003-6951Article

Properties of a poly-Si/GaAs layered structure on Si for Si heterojunction bipolar transistorKIKUTA, K; KIKKAWA, T; KAWANAKA, M et al.Journal of electronic materials. 1990, Vol 19, Num 8, pp 795-799, issn 0361-5235Article

Simulation of influence of undoped spacer layers in Si/SiGe-HBTs on transit frequencyROSSBERG, M; SCHWIERZ, F; ALBERS, J. N et al.Electronics Letters. 1993, Vol 29, Num 1, pp 85-87, issn 0013-5194Article

parameter-extraction method for heterojunction bipolar transistorsMAAS, S. A; TAIT, D.IEEE microwave and guided wave letters. 1992, Vol 2, Num 12, pp 502-504Article

Bidirectional bistability in n-p-n Si/Si1-xGex/Si structuresSHEN, G. D; XU, D. X; WILLANDER, M et al.IEEE electron device letters. 1988, Vol 9, Num 9, pp 453-456, issn 0741-3106Article

Observation of nonequilibrium holes in Si-SiGe unipolar transistor structuresLIU, H. C; BUCHANAN, M; BARIBEAU, J.-M et al.Applied physics letters. 1993, Vol 62, Num 9, pp 988-990, issn 0003-6951Article

Electron transport in submicron AlGaAs/GaAs heterostructure bipolar transistors with a modified collector structureERSHOV, M; SVYATCHENKO, A.Acta physica Polonica. A. 1990, Vol 77, Num 2-3, pp 233-235, issn 0587-4246Article

Bandgap and transport properties of Si1-xGex by analysis of nearly ideal Si/Si1-xGex/Si heterojunction bipolar transistorsKING, C. A; HOYT, J. L; GIBBONS, J. F et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2093-2104, issn 0018-9383, 12 p., 1Article

Charge dynamics in heterostructure Schottky-gate capacitors and their influence on the transconductance and low-frequency capacitance of MODFET'sVOINIGESCU, S; MÜLLER, A.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2320-2327, issn 0018-9383, 8 p., 1Article

Design and experimental characteristics of strained In0.52Al0.48As/InxGa1-xAs (x>0.53) HEMT'sGEOK-ING NG; PAVLIDIS, D; JAFFE, M et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2249-2259, issn 0018-9383, 11 p., 1Article

  • Page / 415