High purity silicon VIII (Honolulu HI, 3-8 October 2004)Claeys, C.L; Watanabe, M; Falster, R et al.Proceedings - Electrochemical Society. 2004, issn 0161-6374, isbn 1-56677-418-7, XII, 438 p, isbn 1-56677-418-7Conference Proceedings

Impurity locking of dislocations in siliconGIANNATTASIO, A; MURPHY, J. D; SENKADER, S et al.Proceedings - Electrochemical Society. 2004, pp 39-54, issn 0161-6374, isbn 1-56677-418-7, 16 p.Conference Paper

Nitrogen in silicon: Properties and impact on grown-in microdefectsVORONKOV, V. V; FALSTER, R.Proceedings - Electrochemical Society. 2004, pp 86-101, issn 0161-6374, isbn 1-56677-418-7, 16 p.Conference Paper

Thresholds for effective internal gettering in silicon wafersFALSTER, R; VORONKOV, V. V; RESNIK, V. Y et al.Proceedings - Electrochemical Society. 2004, pp 188-201, issn 0161-6374, isbn 1-56677-418-7, 14 p.Conference Paper

Inhibiting surface roughening during the thermal desorption of siliconPUN, A. F; WANG, X; MEEKS, J. B et al.Proceedings - Electrochemical Society. 2004, pp 23-26, issn 0161-6374, isbn 1-56677-418-7, 4 p.Conference Paper

Improvement in the SIMS measurement of bulk nitrogen in siliconPARK, Byoung-Suk; WANG, L; HOCKETT, R. S et al.Proceedings - Electrochemical Society. 2004, pp 60-68, issn 0161-6374, isbn 1-56677-418-7, 9 p.Conference Paper

Impact of lanthanide contamination on ULSI CMOSTAYLOR, W. J; LOVEJOY, L; TOBIN, P. J et al.Proceedings - Electrochemical Society. 2004, pp 297-306, issn 0161-6374, isbn 1-56677-418-7, 10 p.Conference Paper

Irradiation-induced deep levels in siliconSIEMIENIEC, R; NIEDEMOSTHEIDE, F.-J; SCHULZE, H.-J et al.Proceedings - Electrochemical Society. 2004, pp 369-384, issn 0161-6374, isbn 1-56677-418-7, 16 p.Conference Paper

Defect engineering and control in nanocrystalline siliconMILOVZOROV, D.Proceedings - Electrochemical Society. 2004, pp 226-233, issn 0161-6374, isbn 1-56677-418-7, 8 p.Conference Paper

Long-time relaxation of silicon-resistivity after annihilation of thermal donorsVORONKOVA, G. I; BATUNINA, A. V; VORONKOV, V. V et al.Proceedings - Electrochemical Society. 2004, pp 275-285, issn 0161-6374, isbn 1-56677-418-7, 11 p.Conference Paper

On the influence of nitrogen and carbon on the formation of dislocations in heavily doped silicon wafersWINKLER, R; KRAUTBAUER, R; PECH, R et al.Proceedings - Electrochemical Society. 2004, pp 55-59, issn 0161-6374, isbn 1-56677-418-7, 5 p.Conference Paper

Oxygen-related donors in germanium doped Czochralki siliconYANG, Deren; LI, Hong; YU, Xuegong et al.Proceedings - Electrochemical Society. 2004, pp 268-274, issn 0161-6374, isbn 1-56677-418-7, 7 p.Conference Paper

Nitrogen in thin silicon wafers determined by infrared spectroscopyAKHMETOV, V. D; LYSYTSKIY, O; RICHTER, H et al.Proceedings - Electrochemical Society. 2004, pp 109-120, issn 0161-6374, isbn 1-56677-418-7, 12 p.Conference Paper

Formation and control of defects in nitrogen doped silicon crystalsHUBER, A; LAMBERT, U; HÄCKL, W et al.Proceedings - Electrochemical Society. 2004, pp 77-85, issn 0161-6374, isbn 1-56677-418-7, 9 p.Conference Paper

Thermal evolution of hydrogen related defects in silicon investigated by μ-Raman spectroscopyMA, Y; HUANG, Y. L; JOB, R et al.Proceedings - Electrochemical Society. 2004, pp 385-394, issn 0161-6374, isbn 1-56677-418-7, 10 p.Conference Paper

Trapping mechanisms by cavities for metallic impurities in monocristalline siliconREGULA, G; EL BOUAYADI, R; PICHAUD, B et al.Proceedings - Electrochemical Society. 2004, pp 208-217, issn 0161-6374, isbn 1-56677-418-7, 10 p.Conference Paper

A kinetic model for p-type doping in silicon epitaxy by CVDMEHTA, Bhavesh; MENG TAO.Proceedings - Electrochemical Society. 2004, pp 12-22, issn 0161-6374, isbn 1-56677-418-7, 11 p.Conference Paper

FTIR measurement of nitrogen in silicon using shuttle type sample stageWATANABE, Masaharu; TAKENAWA, Noriaki.Proceedings - Electrochemical Society. 2004, pp 121-131, issn 0161-6374, isbn 1-56677-418-7, 11 p.Conference Paper

Accurate modeling of copper precipitation kinetics including fermi level dependenceGUO, Hsiu-Wu; DUNHAM, Scott T.Proceedings - Electrochemical Society. 2004, pp 165-175, issn 0161-6374, isbn 1-56677-418-7, 11 p.Conference Paper

Modeling of internal gettering for metal impurities by oxide precipitates in CZ-Si wafersSUEOKA, Koji.Proceedings - Electrochemical Society. 2004, pp 176-187, issn 0161-6374, isbn 1-56677-418-7, 12 p.Conference Paper

HE- induced nanocavities for the gettering of metallic impurities in siliconNTSOENZOK, E; DELAMARE, R; ALQUIER, D et al.Proceedings - Electrochemical Society. 2004, pp 202-207, issn 0161-6374, isbn 1-56677-418-7, 6 p.Conference Paper

Single spin silicon etching behavior analysis by quality engineering (Taguchi method)ITOH, Shinobu; TAKANO, Masaki; KOZUKI, Yasushi et al.Proceedings - Electrochemical Society. 2004, pp 357-366, issn 0161-6374, isbn 1-56677-418-7, 10 p.Conference Paper

Experimental study and simulation of stress-induced cavities in siliconLOIKO, K. V; PEIDOUS, I. V; FRENSLEY, W. R et al.Proceedings - Electrochemical Society. 2004, pp 218-225, issn 0161-6374, isbn 1-56677-418-7, 8 p.Conference Paper

Application of electric current in growing silicon single crystalsWANG, Jong Hoe.Proceedings - Electrochemical Society. 2004, pp 3-11, issn 0161-6374, isbn 1-56677-418-7, 9 p.Conference Paper

Impact of STI width and spacing on the stress generation in deep submicron CMOSPOYAI, A; RITTAPORN, I; SIMOEN, E et al.Proceedings - Electrochemical Society. 2004, pp 307-316, issn 0161-6374, isbn 1-56677-418-7, 10 p.Conference Paper