Loss-factor behavior of freshwater ice at 13.5 and 37.5 GHzBORDONSKI, G. S; KRYLOV, S. D.IEEE transactions on geoscience and remote sensing. 1998, Vol 36, Num 2, pp 678-680, issn 0196-2892Article

Peculiarities of current through systems of antiferroelectric and ferroelectric capacitorsISUPOV, V. A.Ferroelectrics (Print). 1993, Vol 142, Num 3-4, pp 255-261, issn 0015-0193Article

Metal-ferroelectric-semiconductor structures based on thin Sn2P2S6 filmsROGACH, E. D; SANDJIEV, D. N; SAVCHENKO, E. A et al.Ferroelectrics. Letters section. 1990, Vol 11, Num 2, pp 31-37, issn 0731-5171Article

Distribution of internal bias field in L-α-alanine doped triglycine sulfate crystalNAKATANI, N.Japanese journal of applied physics. 1991, Vol 30, Num 5, pp 1024-1027, issn 0021-4922, 4 p., 1Article

Effects of niobium substitution for titanium on electrical properties in single crystals of lead bismuth titanateYI, I.-S; MIYAYAMA, M.Japanese journal of applied physics. 1997, Vol 36, Num 10A, pp L1321-L1324, issn 0021-4922, 2Article

Study of the electric hysteresis loop from properties of the Bi-O₂ layer on the cleaved surface of a Bi₂Sr₂CaCu₂O_y single crystalXIAOLIN WANG; ZHUO WANG; HONG WANG et al.Physica. C. Superconductivity. 1993, Vol 208, Num 3-4, pp 259-262, issn 0921-4534Article

Ferroelectricity in zinc cadmium tellurideWEIL, R; NKUM, R; MURANEVICH, E et al.Physical review letters. 1989, Vol 62, Num 23, pp 2744-2746, issn 0031-9007Article

Effect of top electrode deposition condition on polarization fatigue of RuO₂/Pb(Zr, Ti)O₃/RuO₂ thin film capacitorsHONG, Suk-Kyoung; HYEONG JOON KIM; HONG GEUN YANG et al.Journal of the Electrochemical Society. 2002, Vol 149, Num 10, pp F152-F154, issn 0013-4651Article

Preparation of SiN_x passivation films for PZT ferroelectric capacitors at low substrate temperatures by catalytic CVDMINAMIKAWA, Toshiharu; YONEZAWA, Yasuto; HEYA, Akira et al.Thin solid films. 2001, Vol 395, Num 1-2, pp 284-287, issn 0040-6090Conference Paper

Lead zirconate titanate deposited on RuO₂ by pulsed laser ablationDE BENEDITTIS, A; DI CRISTOFORO, A; MAJNI, G et al.Applied surface science. 1997, Vol 109-10, pp 299-304, issn 0169-4332Conference Paper

Dielectric hysteresis loop in alicyclic and aromatic polyamidesMURATA, Y; TSUNASHIMA, K; KOIZUMI, N et al.Japanese journal of applied physics. 1994, Vol 33, Num 3A, pp L354-L356, issn 0021-4922, 2Article

Anomalous hysteresis loops in KNbO₃ single crystalsINGLE, S. G; DUPARE, J. G.Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties. 1993, Vol 67, Num 1, pp 117-130, issn 0958-6644Article

Polarisation against voltage hysteresis loop of surface-stabilised ferroelectric liquid crystalsREYNAERTS, C; DE VOS, A.Journal of physics. D, Applied physics (Print). 1989, Vol 22, Num 10, pp 1504-1509, issn 0022-3727, 6 p.Article

Influence du champ électrique sur la constante diélectrique des cristaux de (NH4)2BeF4 au voisinage de la transition de phase commensurable-incommensurableSTRUKOV, B. A; KURULENKO, E. P.Fizika tverdogo tela. 1987, Vol 29, Num 1, pp 199-201, issn 0367-3294Article

Dielectric studies on phase transition of Ca₂Sr(CH₃CH₂COO)_6(1-x)(HCF₂CF₂COO)_6xYANO, S; YAMADA, K; SHIMIZU, H et al.Journal of the Physical Society of Japan. 1987, Vol 56, Num 9, pp 3338-3346, issn 0031-9015Article

Processus de réarrangement d'une structure de domaines des monocristaux de trihydrogénosélénite de sodium sous l'action de contraintes mécaniques et de champs électriquesKLYUSHKIN, L. N; IVANOVA, T. I; RUDYAK, V. M et al.Kristallografiâ. 1987, Vol 32, Num 4, pp 1039-1041, issn 0023-4761Article

Dielectric hysteresis and relaxation in the charge-density-wave compound K_0.3MoO₃MIHALY, L; TESSEMA, G. X.Physical review. B, Condensed matter. 1986, Vol 33, Num 8, pp 5858-5861, issn 0163-1829Article

Root cause of hysteresis in organic thin film transistor with polymer dielectricNOH, Young H; PARK, S. Young; SEO, Soon-Min et al.Organic electronics. 2006, Vol 7, Num 5, pp 271-275, issn 1566-1199, 5 p.Article

The changing effect of N₂/O₂ gas flow rate ratios on ultrathin nitrogen-enriched oxynitride gate dielectricsCHANG, Kow-Ming; YANG, Wen-Chih; CHEN, Chu-Feng et al.Journal of the Electrochemical Society. 2004, Vol 151, Num 5, pp F118-F122, issn 0013-4651Article

Reliability characteristics of W/WN/TaO_xN_y/SiO₂/Si metal oxide semiconductor capacitorsCHO, Heung-Jae; CHA, Tae-Ho; LIM, Kwan-Yong et al.Journal of the Electrochemical Society. 2002, Vol 149, Num 7, pp G403-G407, issn 0013-4651Article

The effect of cold drawing of films based on the vinylidene fluoride-tetrafluoroethylene copolymer on molecular mobility in the glass transition regionKOCHERVINSKII, V. V.Polymer science. Series A. 2002, Vol 44, Num 11, pp 1137-1145, 9 p.Article

Ferroelectricity and polytypism in TlGaSe₂ crystalsSARDARLY, R. M; SAMEDOV, O. A; SADYKHOV, I. S et al.Solid state communications. 1991, Vol 77, Num 6, pp 453-455, issn 0038-1098, 3 p.Article

Preisach model with stochastic input as a model for viscosityMAYERGOYZ, I. D; KORMAN, C. E.Journal of applied physics. 1991, Vol 69, Num 4, pp 2128-2134, issn 0021-8979, 7 p.Article

A.C. electrical behaviour of cobalt-complex-doped polyimide filmsKHOR, E; HOCK SIEW TAN; SER CHOON NG et al.Polymer (Guildford). 1990, Vol 31, Num 4, pp 623-626, issn 0032-3861Article

Dielectric relaxation spectroscopy studies on a polymer with mesogenic side chainsATTARD, G. S; WILLIAMS, G; FAWCETT, A. H et al.Polymer (Guildford). 1990, Vol 31, Num 5, pp 928-934, issn 0032-3861Article