Deformation potential and intervalley scattering: hot-electron transistor analysisSRINIVASAN KRISHNAMURTHY; SHER, A; CHEN, A.-B et al.Applied physics letters. 1988, Vol 53, Num 19, pp 1853-1855, issn 0003-6951Article

Modeling hot-carrier effects in polysilicon emitter bipolar transistorsBURNETT, J. D; CHENMING HU.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 12, pp 2238-2244, issn 0018-9383Article

Structured base hot-electron transistorsHERBERT, D. C.Semiconductor science and technology. 1988, Vol 3, Num 11, pp 1129-1131, issn 0268-1242Article

On the properties of hot electrons in semiconductor quantum wellsRIDLEY, B. K.Journal of physics. C. Solid state physics. 1984, Vol 17, Num 30, pp 5357-5365, issn 0022-3719Article

Competitive immunoassay by hot electron-induced electrochemiluminescence detection and using a semiautomatic electrochemiluminometerESKOLA, Jarkko; MÄKINEN, Piia; OKSA, Laura et al.Journal of luminescence. 2006, Vol 118, Num 2, pp 238-244, issn 0022-2313, 7 p.Article

Ballistic transport in hot-electron transistorsJINGMING XU; SHUR, M.Journal of applied physics. 1987, Vol 62, Num 9, pp 3816-3820, issn 0021-8979Article

Direct measurement of the energy distribution of hot electrons in silicon dioxideBRORSON, S. D; DIMARIA, D. J; FISCHETTI, M. V et al.Journal of applied physics. 1985, Vol 58, Num 3, pp 1302-1313, issn 0021-8979Article

Flip-flop circuit using a resonant-tunnelling hot electron transistor (RHET)YOKOHAMA, N; IMAMURA, K.Electronics Letters. 1986, Vol 22, Num 23, pp 1228-1229, issn 0013-5194Article

Hot-electron memory effect in double-leyered heterostructuresLURYI, S; KASTALSKY, A; GOSSARD, A. C et al.Applied physics letters. 1984, Vol 45, Num 12, pp 1294-1296, issn 0003-6951Article

Nonequilibrium phonon effect on time-dependent relaxation of hot electrons in semiconductor heterojunctionsCAI, W; MARCHETTI, M. C; LAX, M et al.Physical review. B, Condensed matter. 1987, Vol 35, Num 3, pp 1369-1372, issn 0163-1829Article

Lucky-electron model of channel hot-electron injection in MOSFETsTAM, S; PING-KEUNG KO; CHENMING HU et al.I.E.E.E. transactions on electron devices. 1984, Vol 31, Num 9, pp 1116-1125, issn 0018-9383Article

Transport of electrons in monolithic hot electron Si transistorsBERZ, F.Solid-state electronics. 1986, Vol 29, Num 12, pp 1213-1222, issn 0038-1101Article

Luminescence from hot electrons relaxing by LO phonon emission in p-GaAs and GaAs doping superlatticesFASOL, G; PLOOG, K; BAUSER, E et al.Solid state communications. 1985, Vol 54, Num 5, pp 383-387, issn 0038-1098Article

Evaluation of LDD MOSFET's based on hot-electron-induced degradationHSU, F.-C; CHIU, K.-Y.IEEE electron device letters. 1984, Vol 5, Num 5, pp 162-165, issn 0741-3106Article

Hot electrons and laser optoacoustics in metal nanoparticlesBILOTSKY, Y; GRIGORCHUK, N. I; TOMCHUK, P. M et al.Surface science. 2009, Vol 603, Num 22, pp 3267-3274, issn 0039-6028, 8 p.Article

Transfer efficiency in ballistic electron emission microscopy taking diffraction of emitted hot electrons into accountMACHIDA, Nobuya; SATOH, Shunsuke; FURUYA, Kazuhito et al.Surface science. 2006, Vol 600, Num 21, pp 4843-4847, issn 0039-6028, 5 p.Article

Exact solution of a transport equation for hot-electron effects in semiconductors and metals = Solution exacte d'une équation de transport pour les effets des électrons chauds dans les semiconducteurs et les métauxSARKER, S. K; HU, Y.-K; STANTON, C. J et al.Physical review. B, Condensed matter. 1987, Vol 35, Num 17, pp 9229-9239, issn 0163-1829Article

Superconductor-base hot-electron transistor. I: Theory and designTONOUCHI, M; SAKAI, H; KOBAYASHI, T et al.Japanese journal of applied physics. 1986, Vol 25, Num 5, pp 705-710, issn 0021-4922, 1Article

A new functional, resonant-tunneling hot electron transistor (RHET)YOKOYAMA, N; IMAMURA, K; MUTO, S et al.Japanese journal of applied physics. 1985, Vol 24, Num 11, pp L853-L854, issn 0021-4922, 2Article

Comments on structure-enhanced MOSFET degradation due to hot-electron injectionPIMBLEY, J. M; GILDENBLAT, G; HSU, F.-C et al.IEEE electron device letters. 1984, Vol 5, Num 7, pp 256-260, issn 0741-3106Article

A measurement method for the increase of digital switching time due to hot-electron stressPIMBLEY, J. M.IEEE electron device letters. 1985, Vol 6, Num 7, pp 366-368, issn 0741-3106Article

Hot-electron relaxation in GaAs quantum wellsYANG, C. H; CARLSON-SWINDLE, J. M; LYON, S. A et al.Physical review letters. 1985, Vol 55, Num 21, pp 2359-2361, issn 0031-9007Article

Polarized hot-electron photoluminescence in highly doped GaAsTWARDOWSKI, A; HERMANN, C.Physical review. B, Condensed matter. 1985, Vol 32, Num 12, pp 8253-8257, issn 0163-1829Article

Stability of a hot-electron-stabilized symmetric tandem mirror with thermal barrierTSANG, K. T.The Physics of fluids. 1985, Vol 28, Num 11, pp 3321-3327, issn 0031-9171Article

Hot electron device monitoring and characterisation: a reviewSANCHEZ, J. J; HSUEH, K; DE MASSA, T.A et al.IEE proceedings. Part I. Solid-state and electron devices. 1988, Vol 135, Num 5, pp 113-118, issn 0143-7100Article